• 한국결정성장학회지
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• 제7권3호
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• pp.487-493
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• 1997

SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다.

• 한국멀티미디어학회논문지
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• 제9권8호
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• pp.963-970
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• 2006

본 논문에서는 저가형 CSTN-LCD(Color Super-Twisted Nematic Liquid Crystal Display)에 사용하는 동영상 프로세서를 제안한다. 제안된 프로세서는 SFP(SubFrame Pattern) 기법을 적용하여 계조 확장을 할 뿐 아니라 플리커(flicker)현상을 제거하였고 BFI(Black Field Insertion) 기법을 적용하여 액정의 응답시간을 보상하였다. 그리고 화질 향상을 위한 에지 강조 기법과 보간기법을 적용하였다. 하드웨어 구조는 FPGA 프로토타입 보드를 사용하여 검증하였다. 제안된 동영상 프로세서는 PDA(Personal Digital Assistants), 모바일 폰과 PMP(Portable Multimedia Player) 등에 사용되어 질 수 있다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.320-323
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• 2008

In this paper, electro-optical characteristic of Nematic Liquid crystal (LC) with varying temperature in different LCD modes, namely Fringe Field Switching (FFS), In-plane switching (IPS), and Patterned Vertical Alignment (PVA) modes are investigated and compared. Electro optic me asurements suggest that rate of change of transmission with temperature in FFS mode was lowest and much more thermally stable as compared to IPS and PVA m odes. However the electro-optical characteristic of patterned vertical alignment (PVA) mode was most affected by changing temperature. The measured threshold voltage was found to be much more thermally stable in FFS and IPS modes than that of PVA mode.

• 한국결정성장학회지
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• 제5권2호
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• pp.100-108
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• 1995

SOI구조를 얻기 위한 방법의 한가지인 ZMR공정에 있어서 열전달은 계면의 위치와 모양을 결정하는 중요한 역할을 한다. 본 연구에서는 SOI구조를 얻기 위한 ZMR공정중의 열전달 공정을 모사할 수 있는 의사정상상태 2차원 ZMR모델을 수립하였다. 본 모델은 복사, 전도 그리고 대류 열전달을 포함하며, 고/액 계면의 위치를 결정한다. 모델로부터 구한 수치해는 실리콘 기판의 용융부에서의 유동장, 전체 SOR구조에서의 온도장 그리고 실리콘 박막과 기판에서의 고/액 계면의 위치를 포함한다. 여러 공정 변수들의 변화에 따른 온도장과 계면의 형상과 폭의 변화를 알아보았다.

• 한국결정성장학회지
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• 제17권5호
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• 한국초전도ㆍ저온공학회논문지
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• 제16권4호
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• pp.26-30
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• 2014

We investigate the upper critical field anisotropy ${\Gamma}_H$ and the magnetic penetration depth anisotropy ${\Gamma}_{\lambda}$ of a high-quality $FeSe_{1-x}$ single crystal using angular dependent resistivity and torque magnetometry up to 14 T. High quality single crystals of $FeSe_{1-x}$ were successfully grown using $KCl-AlCl_3$ flux method, which shows a sharp superconducting transition at $T_C{\sim}9K$ and a high residual resistivity ratio of ~ 25. We found that the anisotropy ${\Gamma}_H$ near $T_C$ is a factor of two larger than found in the poor-quality crystals, indicating anisotropic 3D superconductivity of $FeSe_{1-x}$. Similar to the 1111-type Fe pnictides, the anisotropies ${\Gamma}_{\lambda}$ and ${\Gamma}_H$ show distinct temperature dependence; ${\Gamma}_H$ decreases but ${\Gamma}_{\lambda}$ increases with lowering temperature. These behaviors can be attributed to multi-band superconductivity, but different from the case of $MgB_2$. Our findings suggest that the opposite temperature dependence of ${\Gamma}_{\lambda}$ and ${\Gamma}_H$ is the common properties of Fe-based superconductors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.616-619
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• 2009

Color tracking behavior of in the fringe-field switching (FFS) mode using a liquid crystal with positive dielectric anisotropy has been studied. In the in-plane switching and vertical alignment devices, color chromaticity at normal direction changes from bluish to yellowish white linearly with increasing grey levels from dark to white state. Interestingly, abnormal behavior in color tracking is observed in FFS devices using a liquid crystal with positive dielectric anisotropy, that is, it changes from bluish to yellowish up to a certain middle grey level but turns over to bluish white with further increasing from a grey level to a fully white state. In this paper, we analyze this abnormal effect from the calculated and experimental results.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.309-313
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• 2011

In this study, we proposed a novel electrode structure for the fringe field switching (FFS) mode LCD and performed a three-dimensional computer simulation to calculate the optical transmittance for the new structure. In the simulation Erickson-leslie equation and Berreman $4{\times}4$ matrix were used for obtaining the director distribution profiles of liquid crystal molecules and the electro-optical characteristics, respectively. Considering the complexity of the motional equation of the liquid crystal molecules, FDM (finite difference method) was used as a numerical method. From the results, We revealed that the light transmission of the newly designed pixel structure is expended to the edge of the pixel electrode. We also confirmed that the light transmittance increased more than 13% compared to that of the conventional electrode structure.