• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.341-342
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• 2008

The dynamics of nano particles in LC medium under an external electric field is of theoretical and technological interest. In this work, the dynamical characteristics of fullerene $(C_{60})$ particles in liquid crystal (LC) medium under dc electric field have been investigated. This effect was studied for homogeneously aligned nematic LC cells driven by in-plane field. The $C_{60}$ was found to be aggregated in a form of cluster inside the LC medium. Hence polystytene was used to protect the aggregation of $C_{60}$ in LC medium. When the electric field was applied, the fullerenes start to move in direction of applied electric field. The density of $C_{60}$'s particles at the electrodes increase with increase in the value of applied electric field. The dynamical motions of fullerene $(C_{60})$ particles in liquid crystal (LC) suggest that fullerene can be designed for electrophoretic displays (i.e., electronic ink).

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.131-134
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• 1997

Scintillation crystals for industrial field are used in fundamental physics i.e. nuclear and high energy physics experiments besides the medical imaging, process control and gauging, container inspection, mineral process etc. For the reason of limited marketability, there are not so many studies with emphasis paced on the crystal growth. The scintillation crystal is an important theme in the studies in the fundamental physics and researchers for crystal growth are expected participate it. The present work is partly supported by a Grant-in-Aid from the Japanese Ministry of Education, Science and Culture.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.287-288
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• 2004

We report on the development of ferronematic liquid crystals, new materials that consist of a dilute suspension of ferroelectric particles in a nematic liquid crystal host. The particles share their ferroelectric properties with the nematic liquid crystal and impose a spontaneous dielectric polarization of about 10 nC/$cm^2$ to the entire medium, typical for many ferroelectric liquid crystals. As expected, these new materials have enhanced dielectric anisotropy and are sensitive to the sign of an applied electric field. The potential of their use in a number of devices are discussed.

• Asian Journal of Atmospheric Environment
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• 제5권3호
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• pp.196-203
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• 2011

The main aim of this study is to establish methods of morphological preservation and elemental quantification for individual snow crystals. Individual snow crystals were collected at a height of 20 m above ground level. To stabilize and preserve the original morphologies of the snow crystals, cyanoacrylate, which has been used to fix liquid droplets, was applied (Kasahara et al., 2000). Several different kinds of snow crystals (dendrite, sectored plate, quasi-sectored plate, and hexagonal plate) were successively stabilized using this method. The stabilized snow crystals were pretreated with acetone, and then the elemental components contained in a whole snow crystal were quantified with the Particle Induced X-ray Emission (PIXE) analytical technique. The snow crystal residual composition determined in the present study was dominated by sulfur and mineral components, and the elemental mass showed an apparent crystal size dependence, where the elemental mass gradually decreased as the crystal size increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제17권4호
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• pp.426-431
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• 2004

We have studied the pressure-dependent liquid crystal's dynamics in a twisted nematic (TN) liquid crystal panel with thin film transistor by applying an external pressure to it. When the external pressure is applied to the panel in a dark state, the disclination lines were generated as a light leakage whereas they did not appear in a simple test cell that has only pixel and common electrodes. It was because the disclination lines were Provoked by the electric field between pixel electrode and data/gate bus line for active matrix driving. Consequently, the external pressure resulted in dynamic instability of the liquid crystal so that the disclination lines at the data/gate bus line intruded into the active area.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.21-25
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• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Journal of Information Display
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• 제5권2호
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• pp.27-38
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• 2004

We describe dried oriented films with anisotropic structural and optical properties prepared from the aqueous solutions of plank-like molecules, the so-called Lyotropic Chromonic Liquid Crystals (LCLCs). The dried LCLC films may be used as optical elements, such as polarizers, compensators, color filters, or retardation plates in the UV, visible, or infrared parts of spectrums. The optical quality of the films is determined by the uniformity of the molecular alignment, which often distorted by periodic variations of the director field. We describe different ways to improve the alignment properties of the films by using additives. We present compositions capable of polarizing effects in visible and UV parts of spectrum.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제9권8호
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• pp.1793-1798
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• 2005

We model the nucleation and motion of defects in the liquid crystal display device with inhomogeneous surface by using fast Q-tensor method, which can calculate scalar order parameter S and nucleation of the defect in the liquid crystal director field. In order to model the defect, homeotropic aligned liquid crystal cell with step inhomogeneous electrode which has a height of $1{\mu}m$ is used. From the simulation, we can observe the nucleation and line of the defect from surface inhomogeneity and the experiment is performed for confirmation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.