• 제목/요약/키워드: Crystal Grain Change

검색결과 39건 처리시간 0.023초

온간단조에서의 소성변형과 결정입자 변화와의 관계 (Study on the Relationship between Plastic Deformation and Crystal Grain Change in Warm Forging)

  • 제진수;김재훈
    • 대한기계학회논문집A
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    • 제20권2호
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    • pp.461-472
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    • 1996
  • The relationship between plastic deformation and crystal grain change in warm forging processes of SM10C carbon steel is studied. If the carbon steel is deformed at warm forging temperature(about recrystallization range), material properties are changed due to microstructural chanre of the crystal grain and cementite of the internal part. Some experimental values are investigated in terms of the elliptic degree of cementite, the grain size of cementite and ferrite grain size. When plastic deformation proceeds, the elliptic degree of cementite becomes larger and the grain size of cementite particle becomes small. In addition, the size of ferrite grain becomes fines by recrystallization. The elliptic degree of cementite has a considerable effect on formability. The distribution of effective strain in the forging was calculated by the rigid visco-plastic FEM analysis. The effective strain distribution obtained from the FEM simulation is compared with the experimental result, At the level of effective strain 0.3, dynamic recovery and dynamic recrystallization begin and at the level of over 2.5, the organization of material has better internal structure that is suitable for the following cold forming.

온간 단조기에서의 소성변형과 결정입자 변화와의 관계 (Study on the relationship between Plastic Deformation and Crystal Grain Change in Warm Forging)

  • 이해영;제진수;강성수
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1995년도 제2회 단조심포지엄 단조기술의 진보
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    • pp.100-123
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    • 1995
  • The relationship between plastic deformation and crystal grain change in warm forging processes of SM100 carbon steel is studied. If the carbon steel is deformed in warm forging temperature (about recrystallization range), the crystal grain and cementite of the internal part are changed, so material properties are changed. Some experimental values, such as the elliptic degree of cementite, the grain size of cementitie and ferrite grain size, are investigated. When the plastic deformation proceeds, the elliptic degree of cementite becomes large, the grain size of cementite particle is small, and the size of ferrite grain appears fine by recrystallization. The elliptic degree of cementite has a considerable effect on formability. The distribution of effective strain in the forging is calculated by the rigid visco-plastic FEM analysis. The effective strain distribution obtained from the FEM simulation is compared with the experimental result. At effective strain 0.3 dynamic recovery and dynamic recrystallization begin, over 2.5 the organization of material has better quality that is suitable for the following cold forming.

300 mm 길이의 사파이어 단결정 대한 CZ 성장공정의 수치해석: Part II. Subgrain 결함이 없는 단결정 성장 길이의 예측 (Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects)

  • 신호용;홍수민;윤종원;정대용;임종인
    • 한국결정성장학회지
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    • 제23권6호
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    • pp.272-278
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    • 2013
  • 본 논문에서는 CZ법으로 성장시킨 300 mm 사파이어 단결정의 c-축 변형 특성 및 내부 응력 상태를 수치해석하고, 사파이어 단결정에서 sub-grain 결함이 없는 성장 길이를 예측하였다. CZ 성장로의 hot zone 구조는 Ir 도가니 형상 및 상부 단열재 추가 설치 등으로 변경하였다. 본 연구의 시뮬레이션 결과, hot zone 구조 변경에 의한 c-축 변형 차이는 결정 내부에 sub-grain 결함 등이 내부에 생성되어 발생한다. Hot zone 구조 변경에 의해 sub-grain 결함이 없는 성장 길이를 기존 보다 최대 약 57 mm 정도 증가시킬 수 있을 것으로 예측되었다. 그리고 c-축 wafer에 대한 sub-grain 결함을 실험적으로 분석하고, 시뮬레이션 예측 결과와 잘 일치하고 있는 것을 확인하였다. 그 결과, CZ 공정을 이용해 약 250 mm까지 sub-grain 결함이 없는 사파이어 결정을 성공적으로 성장시킬 수 있었다.

다결정 $Si_{1-x}Ge_x$박막 증착에 관한 연구(II) 증착변수에 따른 표면거칠기, 결정립크기 및 전기적성질 변화 (A study on the Poly-$Si_{1-x}Ge_x$ thin film deposition(II) Variation of surface roughness, grain size and electrical property with deposition parameters)

  • 이승호;어경훈;소명기
    • 한국결정성장학회지
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    • 제8권1호
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    • pp.64-72
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    • 1998
  • 증착변수(온도, 압력, Ge조성) 변화에 따라 증착된 다결정 $Si_{1-x}Ge_x$박막의 결정성 및 결정립크기 그리고 표면거칠기 변화와 이러한 결과들이 비저항에 미치는 영향에 대해 살펴보았다. 증착온도와 Ge조성이 증가함에 따라 결정화도와 결정립크기가 증가하였으며 증가된 결정립에 의해 비저항값은 감소하였으나 표면거칠기가 증가하였다. 한편 증착압력 증가에 따라 결정화도는 증가했으나 결정립크기와 cluster 크기가 감소하였는데 이러한 결정립과 cluster 크기 감소에 의해 표면거칠기가 감소하였다. 또한 증착압력 증가에 따라 결정화도와 비저항은 증가하였으나 결정립크기와 cluster 크기가 작아져 표면거칠기가 감소하였다. 결정화도와 결정립크기가 비저항에 미치는 영향을 볼 때, 결정화도 보다는 결정립크기가 비저항에 더욱 영향을 줌을 알 수 있었다.

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열처리 공정과 비스무스 박막의 결정구조 및 자기저항 특성변화와의 물리적 관계 (Physical correlation between annealing process and crystal structure and magneto-resistance of Bismuth thin films)

  • 장석우;서영호;안호명
    • 한국정보통신학회논문지
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    • 제18권3호
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    • pp.638-642
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    • 2014
  • 본 연구에서는 비스무스(Bi) 박막의 스핀전자소자로의 응용가능성을 확인하기 위해서 열처리 공정에 의한 비스무스 박막의 결정 구조 및 자기저항변화를 조사하였다. 비스무스 박막은 초기에 결정성이 없이 약 100 nm의 결정립과 낮은 자기저항 비(MR)가 상온에서 4.7 % 로 보였으나, 열처리 공정 후 결정립이 확장되고 방위의 재배열이 일어나며 결정립이 형성 되었고, 이로 인해서 자기저항 비가 상온에서 404 %로 크게 향상 되었다. 이러한 자기저항 비의 큰 향상은 크게 확장된 결정립으로 인해서 스핀의 평균산란시간이 크게 증가했기 때문이다. 본 연구를 통해서 열처리 공정이 비스무스 박막의 결정립 형성 및 자기저항 비의 향상에 큰 영향을 보임을 확인하였고, 비스무스 박막의 스핀전자소자로서의 응용 가능성을 증명하였다.

$\Sigma=5(210)$ 결정립계를 포함한 구리 bicrystal 모재상 스크래칭에 관한 분자역학모사 (Molecular dynamics simulation of scratching a Cu bicrystal across a $\Sigma=5(210)$ grain boundary)

  • 김기정;조민형;장호
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2004년도 학술대회지
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    • pp.215-220
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    • 2004
  • Molecular Dynamics(MD) method was used to investigate the change of friction force due to interaction between dislocations and a grain boundary when a Ni tip was scratched on a Cu bicrystal. The substrate comprised a Cu bicrystal containing a vertical$\Sigma=5(210)$ grain boundary. The moving tip for scratching simulation was consisted of fixed Ni atoms emulating a rigid tip. The indentation depth was $3.6\AA$ and the scratching was performed along <110>direction in the first grain. As the scratching was continued, nucleation and propagation of dislocations were observed. In the early stage, the grain boundary played as a barrier to moving dislocations and interrupting further dislocation movement with no dislocation resulting in no propagation across the grain boundary. As the Ni tip approached the grain boundary, dislocations were nucleated at the grain boundary and propagated to the second grain. However, stick-slip phenomena that were observed on a single crystal scratching were not observed in the bicrystal. And, instead, irregular oscillation of friction force was observed during the scratching due to the presence of a grain boundary.

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소결조제에 따른 $Si_{3}N_{4}/SiC$ 초미립복합재료의 고온강도변화 (Change of high temperature strength of $Si_{3}N_{4}/SiC$ nanocomposites with sintering additives)

  • 황광택;김창삼;정덕수;오근호
    • 한국결정성장학회지
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    • 제6권4호
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    • pp.558-563
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    • 1996
  • 첨가된 소결조제가 다른 $Si_{3}N_{4}/20$ vol% SiC 초미립복합재료의 파괴강도를 측정하였다. 소결조제로서 6 wt% $Y_{2}O_{3}$와 2 wt% $Al_{2}O_{3}$를 사용한 시편의 실온강도는 높았지만 낮은 입계상의 연화온도에 기인하여 급격한 강도저하가 나타났다. 소결조제로서 8 wt% $Y_{2}O_{3}$만을 사용한 시편의 $1400^{\circ}C$에서의 고온강도가 높았는데 이는 높은 입계상 연화온도와 입계유리상의 결정화에 기인하는 것으로 판단하였다.

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$(Pb, La)TiO_3$ 세라믹스의 소결 거동 및 유전.초전 특성 (Sintering Behavior, Dielectric and Pyroelectric Properties of $(Pb, La)TiO_3$ Ceramics)

  • 최동구;최시경
    • 한국세라믹학회지
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    • 제31권8호
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    • pp.841-848
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    • 1994
  • The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.

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High Quality Nano Structured Single Gas Barrier Layer by Neutral Beam Assisted Sputtering (NBAS) Process

  • Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.251-252
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    • 2012
  • Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

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이온선 스퍼터 증착법에 의하여 제조된 CrOx의 전기적 특성 (The Electrical Characteristics of Chromium Oxide Film Produced by Son Beam Sputter Deposition)

  • 조남제;이규용
    • 한국전기전자재료학회논문지
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    • 제15권6호
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    • pp.518-523
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    • 2002
  • The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.