• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.455-463
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• 2002

Ionic Polymer metal composite(IPMC), one of new actuation materials of EAPs is fabricated by electroless plating of platinum on both sides of the perfluorosulfonic acid film or Nafion film and its electromechanical characteristics are investigated. The IPMC strip bends towards anode under electrical field. As the number of plating cycle increases, the distance between plated platinum electrodes on both sides of Nafion membrane decreases and also the displacement is almost inversely proportional to the number of plating. The displacement of IPMC strip depends on voltage magnitude and applied signal frequency and its maximum deformation is observed at a critical frequency, resonant frequency. Low pressure sandblasting is used for surface treatment of Nafion membrane and at 8 times of plating cycle produced actuator with high displacement performance. For more efficiency of fabricated IPMC, it is useful to add one or two surface developing step which is the second reduction process using hydrazine.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Advances in nano research
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• v.4 no.2
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• pp.65-84
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• 2016

This paper investigates the buckling behavior of shear deformable piezoelectric (FGP) nanoscale beams made of functionally graded (FG) materials embedded in Winkler-Pasternak elastic medium and subjected to an electro-magnetic field. Magneto-electro-elastic (MEE) properties of piezoelectric nanobeam are supposed to be graded continuously in the thickness direction based on power-law model. To consider the small size effects, Eringen's nonlocal elasticity theory is adopted. Employing Hamilton's principle, the nonlocal governing equations of the embedded piezoelectric nanobeams are obtained. A Navier-type analytical solution is applied to anticipate the accurate buckling response of the FGP nanobeams subjected to electro-magnetic fields. To demonstrate the influences of various parameters such as, magnetic potential, external electric voltage, power-law index, nonlocal parameter, elastic foundation and slenderness ratio on the critical buckling loads of the size-dependent MEE-FG nanobeams, several numerical results are provided. Due to the shortage of same results in the literature, it is expected that the results of the present study will be instrumental for design of size-dependent MEE-FG nanobeams.

• International Journal of Aerospace System Engineering
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• v.9 no.1
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• pp.1-15
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• 2022

Pyrotechnic initiators provide a source of pyrotechnic energy used to initiate a variety of space mechanisms. Pyrotechnic systems build in electromagnetic environment that may lead to critical or catastrophic hazards. Special precautions are need to prevent a pulse large enough to trigger the initiator from appearing in the pyrotechnic firing circuits at any but the desired time. The EMC verification shall be shown by analysis or test that the pyrotechnic systems meets the requirements of inadvertent activation. The MIL-STD-1576 and two range safeties, AFSPC and CSG, require the safety margin for electromagnetic potential hazards to pyrotechnic systems to a level at least 20 dB below the maximum no-fire power of the EED. The PC23 is equivalent to NASA standard initiator and the 1EPWH100 squib is ESA standard initiator. This paper verifies the two safety margins for electromagnetic potential hazards. The first is verified by analyzing against a RF power. The second is verified by testing against a DC current. The EMC safety margin requirement against RF power has been demonstrated through the electric field coupling analysis in differential mode with 21 dB both PC23 and 1EPWH100, and in common mode with 58 dB for PC23 and 48 dB for 1EPWH100 against the maximum no-fire power of the EED. Also, the EMC safety margin requirement against DC current has been demonstrated through the electrical isolation test for the pyrotechnic firing circuits with greater than 20 dB below the maximum no-fire current of the EED.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.37-42
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• 2007

We are developing a 22.9 kV/25 MVA superconducting fault current limiting(SFCL) system for a power distribution network. A Bi-2212 bulk SFCL element, which has the merits of large current capacity and high allowable electric field during fault of the power network, was selected as a candidate for our SFCL system. In this work, we experimentally investigated important characteristics of the 190 kVA Bi-2212 SFCL element in its application to the power grid e.g. DC voltage-current characteristic, AC loss, current limiting characteristic during fault, and so on. Some experimental data related to thermal and electromagnetic behaviors were also compared with the calculated ones based on numerical method. The results show that the total AC loss at rated current of the 22.9 kV/25 MVA SFCL system, consisting of one hundred thirty five 190 kVA SFCL elements, becomes likely 763 W, which is excessively large for commercialization. Numerically calculated temperature of the SFCL element in some sections is in good agreement with the measured one during fault. Local temperature distribution in the190 kVA SFCL element is greatly influenced by non-uniform critical current along the Bi-2212 bulk SFCL element, even if its non-uniformity becomes a few percentages.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Corrosion Science and Technology
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• v.23 no.4
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• pp.334-342
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• 2024

The need for efficient and sustainable energy storage solutions has emerged due to a rapidly increasing energy demand and growing concerns about environmental issues. Among various energy storage methods, lithium secondary batteries are widely used in a variety of electronic devices such as smartphones, laptops, electric vehicles, and large-scale power storage systems due to their high energy density, long lifespan, and cost competitiveness. Recently, all-solid-state batteries (ASSBs) have attracted great attention because they can reduce the risk of fire associated with liquid electrolytes. Additionally, using high-capacity alternative anodes and cathodes in ASSBs can enhance energy density. However, ASSBs that use solid electrolytes experience a degradation in their electrochemical performances due to resistance at solid-solid interfaces. These interfaces can also result in poor physical contact and the presence of products formed from chemical and electrochemical reactions. Solving this interface problem is a critical issue for the commercialization of ASSBs. This review summarizes interfacial reactions between the cathode and solid electrolyte, along with research aimed at improving these interactions. Future development directions in this field are also discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.4
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• pp.684-688
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• 2016

The magnetic resonance method requires high quality factor(Q-factor) of resonators. Superconductor coils were used in this study to increase the Q-factor of wireless power transfer(WPT) systems in the magnetic resonance method. The results showed better transfer efficiency compared to copper coils. However, as superconducting coils should be cooled below critical temperatures, they require cooling containers. In this viewpoint, shielding materials for the cooling containers were applied for the analysis of the WPT characteristics. The shielding materials were applied at both ends of the transmitter and receiver coils. Iron, aluminum, and plastic were used for shielding. The electric field distribution and S-parameters (S11, S21) of superconducting coils were compared and analyzed according to the shield materials. As a result, plastic shielding showed better transfer efficiency, while iron and aluminum had less efficiency. Also, the maximum magnetic field distribution of the coils according to the shielding materials was analyzed. It was found that plastic shielding had 5 times bigger power transfer rate than iron or aluminum. It is suggested that the reliability of superconducting WPT systems can be secured if plastic is used for the cooling containers of superconducting resonance coils.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.