• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.7-9
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• 2007

Thin films of CrAlSiN were deposited on SKD11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of process parameters on the deposited film properties were investigated. The oxidation characteristics of the films were studied at temperatures ranging from 800 and 1000+C up to 50 h in air. The films showed superhardness and good oxidation resistance..

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.125-125
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• 2015

Ti-Al-Cr-N thin layer was prepared on Fe-Si thin sheet by arc ion plating to improve corrosion and mechanical properties. The compositions ratios of Fe : Cr : Al : Ti : Si : N of the thin layers at $500^{\circ}C$ was 1.24 : 0.56 : 36.82 : 32.72 : 0.59 : 28.07 [wt.%], respectively. The higher arc ion plating temperature was, the higher corrosion resistance and nano-hardness were observed due to chromium content. Corrosion potential and corrosion rate in artificial sea water of the coating layer were in the range of $-39mV_{SHE}$ and $2mA/cm^2$, respectively. Passivity was not observed in the artificial sea water. Nano-hardnesses of the thin layers was increased by adding Cr from 23.6 to 25.8 [GPa]. The friction coefficients and fatigue limits of the layers were 0.388, 0.031, respectively.

• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.250-258
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• 1980

Various radicals may add to isonitriles to give imidoyl radcals RN=CR'. This may be also generated via abstraction of imidoyl hydrogen from imine in the following manner: RN=CR' ＋ R"${\cdot}{\rightarrow}$ RN=CR' ＋ R"-H Imidoyl radicals would be stabilized via two pathways, ${\beta}$-cleavage and atom transfer reactions. ${\beta}$-Cleavage may occur in two directions depending upon structure of the radicals. Cyanide transfer and the "so-called" normal ${\beta}$-cleavage are the two modes of ${\beta}$-cleavage. Addition of t-butoxy radical to t-butyl isocyanide 7 generates an imidoyl radical t-Bu-N=C-O-Bu-t, which undergoes ${\beta}$-cleavage to give t-butyl isocyanate and t-butyl radical. Addition of phenyl radical to 7 forms the intermediate radical t-Bu-N=$C-C_6H_5$, which decomposes to give benzonitrile and t-butyl radical. The t-butyl radical generated from the ${\beta}$-cleavage adds to 7 giving the radical t-Bu-N=C-Bu-t, which cleaves only to pivalonitrile and t-butyl radical, inducing radical chain isomerization. Trimethylsilyl radical adds to 7 to give the intermediate t-Bu-N=$C-Si(CH_3)_3$, which collapses to $(CH_3)_3$SiCN and a t-butyl radical.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.192-193
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• 2009

CrN 코팅막은 고온에서 치밀한 Cr2O3 확산방지막을 형성함으로 $800^{\circ}C$까지 기계적성질을 유지할 수 있다. 본 실험에서는 Ar, N2, 그리고 $O_2$ 가스 분위기에서 AIP(Arc Ion Plating) 기법에 의해 다양한 조성의 Cr-O-N 박막을 Si(200)과 AISI 304 기판 위에 증착되었다. Cr-O-N 코팅막은 47.4at% 미만의 산소함량을 포함 할 때까지 B1구조를 유지하였고 코팅막 내 산소함량 24.6at%에서는 강한 XRD peak intensification을 나타내었다. 47.4at%에서는 결정상을 전혀 찾아볼 수 없는 전이구조를 나타내었고, 그 이상의 산소함량에서는 Cr22O3 결정상을 나타내었다. Cr-O(17at%)-N 조성의 코팅막에서는 (200)배향의 Grain 크기 증가 및 압축잔류응력이 증가하였으나, 그 이상의 산소함량에서는 점차 감소하였다. Cr-O(24.6at%)-N 조성의 코팅막이 가장 높은 경도를 나타내었고, 산소함량이 증가할수록 점차 향상된 마찰특성을 보였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.55-60
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• 2022

In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.200-200
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• 2009

아크이온플래이팅 기술과 DC 마그네트론 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 CrAlCxN1-x 코팅을 증착하였다. 합성된 CrAlCxN1-x 코팅은 주로 유도결합형로 f구성되었다. CrAlCxN1-x 코팅의 carbon 함량이 0.17 at.%일 때 약 34 GPa을 나타내었으며 마찰계수는 carbon 함량이 0에서 1 at.%로 증가함에 따라 0.82에서 0.38까지 크게 감소하였다. 이는 코팅 표면과 steel 볼 사이에 amorphous carbon layer가 형성되어 고체윤활제로 작용한 것으로 사료된다.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.267-274
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• 2009

Titanium Chromium Nitrided (TiCrN) coatings were deposited on stainless steel 316 L and Si (100) wafer by inductively coupled plasma assisted D.C. magnetron sputtering at the various sputtering power on Cr target and $N_2/Ar$ gas ratio. Increasing the sputtering power of Cr target, XRD patterns were changed from TiCrN to nitride $Cr_2Ti$. The maximum hardness was $Hk_{3g}$ 3900 at $0.3\;N_2/Ar$ gas ratio. The thickness of the TiCrN films increased as the Cr target power increased, and it showed over $Hk_{5g}3100$ hardness at 100 W, 150 W. TiCrN films were deposited by the ICP assisted DC magnetron sputtering shown good wear resistance as the $N_2/Ar$ gas ratio was 0.1, 0.3.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.170-171
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• 2012

$Fe_2O_3$, Al, Cr과 Si 분말을 고 에너지 볼 밀링해서 나노분말을 제조한 후 고주파유도 가열 활성 연소합성 장치로 1분 이내의 짧은 시간에 합성 및 소결한 $Al_2O_3+4.65(Fe_{0.43}Cr_{0.17}Al_{0.323}Si_{0.077})$, $Al_2O_3$ + 5.33 ($Fe_{0.375}Cr_{0.11}Al_{0.3}Si_{0.075}$), $Al_2O_3$ + 6.15 ($Fe_{0.325}Cr_{0.155}Al_{0.448}Si_{0.072}$), $Al_2O_3$ + 3.3 ($Fe_{0.6}Cr_{0.3}Al_{0.6}$) 소결체 시편을 $700^{\circ}C$의 온도에서 100시간 동안 공기 중에서 산화 및 $N_2-H_20-H_2S$ 혼합 가스 내에서 황화 부식을 실시하였다. 그 결과 산화 및 황화 부식 후에 ${\alpha}-Al_2O_3$가 표면에 생성되어 보호 피막으로 작용하여 우수한 내식성을 보였다.