• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.80-85
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• 2004

Chromium-carbon (Cr-C) and chromium-carbon-phosphorus (Cr-C-P) alloy deposits using trivalent chromium sulfate baths containing potassium formate were prepared to study their current efficiency, hardness change and phase transformations behavior with heat treatment, respectively. The current efficiencies of Cr-C and Cr-C-P alloy deposits increase with increasing current density in the range of 15-35 A/dm$^2$. Carbon content of Cr-C and phosphorous of Cr-C-P layers decreases with increasing current density, whereas, the carbon content of Cr-C-P layer is almost constant with the current density. Cr-C deposit shows crystallization at $400^{\circ}C$ and has (Cr+Cr$_{ 23}$$C_{6}$) phases at $800^{\circ}C$. Cr-C-P deposit shows crystallization at $600^{\circ}C$ and has (Cr+Cr$_{23}$ $C_{6}$$+Cr_3$P) phases at $800^{\circ}C$. The hardness of Cr-C and Cr-C-P deposits after heating treatment for one hour increase up to Hv 1640 and Hv 1540 and decrease about Hv 820 and Hv 1270 with increasing annealing temperature in the range of $400～^{\circ}C$, respectively. The hardness change with annealing is due to the order of occurring of chromium crystallization, precipitation hardening effect, softening and grain growth with temperature. Less decrease of hardness of Cr-C-P deposit after annealing above $700^{\circ}C$ is related to continuous precipitation of $Cr_{23}$ $C_{6}$ and $Cr_3$P phases which retard grain growth at the temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.182-183
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• 2002

고밀도 자기기록이 가능하기 위해서는 Ku가 크고 노이즈가 작은 매체가 필요하다. CoCrPt 기록층은 보자력이 크고 열적으로 안정하나 결정립크기가 크고 결정립간 교환 상호작용이 커서 노이즈가 크다.[1][2] 한편 CoCrPt 에 Ta, B 등 제4원소를 첨가하면 결정립이 크기가 감소하고 노이즈는 감소하나 Ku가 감소하여 열적으로 불안정해진다.[3] (중략)

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.31.2-31.2
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• 2009

본 연구에서는 Graphene oxide를 $800^{\circ}C$, 질소분위기 하에서 환원시켜 얻은 $GP_{TR}$과 Hydrazine을 이용한 화학적 처리로 얻은 $GP_{CR}$의 분자구조를 제안하였다. 이때 grapheneoxide는 modified Hummers' method를이용하여 제조하였다. $GP_{TR}$과 $GP_{CR}$은 모두 표면에 몇몇의 oxide group이 존재하는데$GP_{TR}$은 six layer로 $C_{100}O_{3{\pm}1}$ 의 조성을 갖고 $GP_{CR}$은 three layer로 and $C_{100}O_{6.5{\pm}2}$의 조성을 갖는다. 그리고 면간간격은 $GP_{TR}$은 $3.432\;{\AA}$, $GP_{CR}$은 $3.760\;{\AA}$으로 전형적인 방법인 top downprocess로 얻은 graphene 보다 다소 크다는 것을 알 수 있다.

• Journal of Technologic Dentistry
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• v.29 no.2
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• pp.213-223
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• 2007

The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. The adhesion between metal substructure and dental porcelain is related to the diffusion of oxygen to the reaction layer formed on cast-metal surface during firing. The purposed of this investigation was to study the effects of gold based bonding agent on Ni-Cr alloy-ceramic adhesion between porcelain matrix, gold based bonding agent and metal substructure interface. gold based bonding agent have been applied as an intermediate layer between a metal substructure and a ceramic coating. gold based bonding agent(Aurofilm NP, Metalor, Swiss) was applied on Ni-Cr alloy surface by four method. Surfaces only air abraded with 110${\beta}\neq$ Al2O3 particles were used as control. metal ceramic adhesion was evaluated by a biaxial flexure test(N=5) and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that the layering sequence of gold based bonding agent is very important and can improve porcelain adherence to PFM.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.49-54
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• 2005

Flexible copper clad laminates (FCCL) fabricated by sputtering has advantages in fine pitch etching and dimensional accuracy than previous casting or laminating type FCCL, But its lower adhesion is inevitable technical challenge to solve for commercializing it. Chromium (Cr) which strongly reacts with O moiety was used as tie-coating layer in order to improve low adhesion between copper (Cu) and polyimide (PI). Sputtering raw polyimide (SRPI) and casting raw polyimide (CRPI) were used as substrates at this research. PI was pretreated by plasma before sputtering, and each sample was varied with RF power and Cr thickness on sputtering. Peel strength of the FCCL on SRPI was higher than that on CRPI. Adhesion had maximum value when 10 nm of Cr was deposited on SRPI by RF power of 50 W. It seems to be by the formation of Cu-Cr-O solid solution at the metal-PI interface.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.155-160
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• 2003

Plasma spraying technique was used to fabricate functionally graded coating (FGC) of NiCrAIY/YSZ 8wt%$Y_2O_3-ZrO_2$ on a Co-base superalloy (HAYNES 188) substrate. Six layers were coated on the substrate for building up compositionally graded architecture. Conventional thermal barrier coating (TBC) of NiCrAIY/SZ with sharp interface was also fabricated. As-coated FGC and TBC samples were exposed at the temperature of $1100^{\circ}C$ for 10, 50, 100 hours in air. Microstructural change of thermally exposed samples was examined. Pores and microcracks were formed in YSZ layer due to evolution of thermal internal stress at high temperature. The amount of pores and microcracks in YSZ layer were increased with increasing exposure time at high temperature. High temperature oxidation of coatings occurred mainly at the NiCrAIY/YSZ interface. In comparison with the case of TBC. the increased area of the NiCrAIY/YSZ interface in FGC is likely to attribute to forming the higher amount of oxides.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1025-1031
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• 1999

Alloys of TiAl with six different compositions. i. e., Ti-(42, 44)Al-2Nb-4V. Ti-(42, 44)Al-4Nb-2V and Ti -(42, 44)Al-4Nb-2Cr, were manufactured by arc-melting. and their oxidation behavior was studied. Both isothermal and cyclic oxidation tests were performed at 700, 800 and $900^{\circ}C$ in air for 50hr. The oxidation resistance increased in the order of Ti-(42, 44)Al-2Nb-4V, Ti-(42, 44)Al-4Nb-ZV and Ti-(42, 44)Al-4Nb-2Cr. It was found that V was a deleterious element, while Cr was a beneficial element in terms of oxidation resistance. During oxidation, a simultaneous interdiffusion was observed. All the constituent elements in the base alloys diffused outward. whereas oxygen from the atmosphere diffused inward, to form triple oxide layers composed of an outermost $\textrm{TiO}_2$ layer. upper ($\textrm{TiO}_2+\textrm{Al}_2\textrm{O}_3$) mixed layer, and lower $\textrm{TiO}_2$-rich layer.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.