• Proceedings of the KWS Conference
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• 1998.10a
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• pp.260-261
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.22-22
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.150-151
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.106-107
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• 2001

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of dental hygiene science
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• v.9 no.2
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• pp.153-160
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• 2009

The purposed of this study was to investigate the effect of Gold bonding agent as intermediate layer between metal substrate and ceramic coating. Gold bonding agent used to seal off any surface porosity, to mask the greyish color of the metal, and to provide an underlying bright golden hue to the ceramic coverage. The adhesion between metal substrate and ceramic is related to diffusion of oxygen during ceramic firing. The oxide layer produced on non-precious alloy anti titanium was considered to have a potentially adverse effect on metal-ceramic bonding. The oxidation characteristics of titanium and non-precious alloys are the main problem. Every group were divided into test and control groups. Control groups are carried out process of degassing for product oxide layer. Au coating was applied on each Ni-Cr, Co-Cr alloys and cp-Ti specimens with difference surface condition or degassing. Specimens surfaces and cutting plane was characterized by SEM/EDS. Results suggested that Au coating is effective barriers to protect metal oxidation during ceramic firing.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korean Electrochemical Society
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• v.8 no.4
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• pp.162-167
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• 2005

Using Pechini method, we synthesized the $La_{0.6}Ca_{0.41}CrO_3$ (LCC41) and $La_{0.8}Sr_{0.05}Ca_{0.15}CrO_3$ (LSCC) powders for slurry dip coating, and $La_{0.75}Ca_{0.27}CrO_3$ (LCC27) powder for air plasma spray coating. The sintering property of the powders and their coating properties were investigated. The average particle sizes of the LCC41, LSCC, LCC27 were 0.6, 0.9, $1.5{\mu}m$, respectively. The relative density of LCC41 bulk was to be found about 98%. The LSCC coating on anode support prevented Ca migration of the coated LCC41 on the anode some or less, which was confirmed from EDS result. The air plasma spray-coated LCC27 with the dip-coated LCC41 were more dense and showed better electrical conductivity than those of the air plasma spray-coated LCC27 and the dip-coated LSCC and LSCC41. The LCC41 and LCC27 showed good electrical conductivities, but the LSCC had a poor electrical conductivity probably due to low sinterability

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.17-22
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• 2000

A quaternary alloy film of $CoCr_{16.2}Pt_{10.8}Ta_4$was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.235-239
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• 2011

TiCrN layers (Ti : Cr = 20 : 80 and 5 : 95 wt%) were deposited on Inconel 617 and the effect of TiCrN coating on the high temperature stability of Inconel 617 up to $1000^{\circ}C$ was examined. XRD analysis and microstructural observation showed that vigorous and inhomogenous Cr diffusion to the surface was suppressed by TiCrN layer compare to the uncoated Inconel 617. This led to a distinctive enhancement in thermal oxidation resistance of Inconel 617.