• Title/Summary/Keyword: Copper-Plating

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Field Emission Characteristics of Carbon Nanotube-Copper Composite Structures

  • Sung, Woo-Yong;Kim, Wal-Jun;Lee, Seung-Min;Lee, Ho-Young;Kim, Yong-Hyup
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1459-1461
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    • 2005
  • Carbon nanotube -copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field of the structures was about 3.0 $V/{\mu}m$ at the current density of 0.1 ${\mu}A/cm^2$. We observed relatively uniform emission characteristics as well as stable emission currents. CNT-Cu composite plating method is efficient and it has no intrinsic limit on the plating area. Moreover, it gives strong adhesion between emitters and an electrode. The refore, we expect that CNT-Cu composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

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A Study on The Effect of Current Density on Copper Plating for PCB through Electrochemical Experiments and Calculations (전기화학적 해석을 통한 PCB용 구리도금에 대한 전류밀도의 영향성 연구)

  • Kim, Seong-Jin;Shin, Han-Kyun;Park, Hyun;Lee, Hyo-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.1
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    • pp.49-54
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    • 2022
  • The copper plating process used to fabricate the submicron damascene pattern of Cu wiring for Si wafer was applied to the plating of a PCB pattern of several tens of microns in size using the same organic additives and current density conditions. In this case, the non-uniformity of the plating thickness inside the pattern was observed. In order to quantitatively analyze the cause, a numerical calculation considering the solution flow and electric field was carried out. The calculation confirmed that the depletion of Cu2+ ions in the solution occurred relatively earlier at the bottom corner than the upper part of the pattern due to the plating of the sidewall and the bottom at the corner of the pattern bottom. The diffusion coefficient of Cu2+ ions is 2.65 10-10 m2/s, which means that Cu2+ ions move at 16.3 ㎛ per second on average. In the cases of small damascene patterns, the velocity of Cu2+ ions is high enough to supply sufficient ions to the inside of the patterns, while sufficient time is required to replenish the exhausted copper ions in the case of a PCB pattern having a size of several tens of microns. Therefore, it is found that the thickness uniformity can be improved by reducing the current density to supply sufficient copper ions to the target area.

A Study on Reusing of Electroless Ni-Cu-P Waste Solution (無電解 Ni-Cu-P 廢 도금액의 재사용에 관한 연구)

  • 오이식
    • Resources Recycling
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    • v.10 no.2
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    • pp.27-33
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    • 2001
  • Reusing of electroless Ni-Cu-P waste solution was investigated in the plating time, plating rate, solution composion and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 50f) waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 10 times over than that of batch type. Plating time of 50% waste solution additive at continuous type took longer 3.7 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by depolited inferiority and larger decreased plating rate.

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A Study on Reusing of Electroless Ni-Cu-B Waste Solution (무전해 Ni-Cu-B 폐 도금액의 재사용에 관한 연구)

  • Oh Iee-Sik;Bai Young-Han
    • Resources Recycling
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    • v.12 no.1
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    • pp.18-24
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    • 2003
  • Reusing of electroless Ni-Cu-B waste solution was investigated in the plating time, plating rate, solution composition and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 40% waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 6 times over than that of batch type. Plating time of 40% waste solution additive at continuous type took longer 2 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by deposited inferiority and larger decreased plating rate.

Study on Heavy Metal Desorption and Recovery of the Carbon Foam used in Industrial Plating Wastewater Treatment as Adsorbent (산업도금폐수 처리에 사용된 탄소폼 흡착소재의 중금속 탈착 및 회수에 관한 연구)

  • Lee, Da-Young;Lee, Chang-Gu;Kim, Dae-Woon;Park, Sang-Hyen;Kweon, Ji-Hyang;Lee, Sang-Hyup
    • Journal of Korean Society of Environmental Engineers
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    • v.38 no.11
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    • pp.627-634
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    • 2016
  • We investigated the characteristics of heavy metal desorption and recovery from carbon foam after plating wastewater treatment. The heavy metal desorption depends on solution chemistry because desorption occurred in HCl and $H_2SO_4 $ solution but did not occur in distilled water. Heavy metal desorption efficiency was increased using ultrasonication with desorption solution. The higher ultrasonic power and the longer reaction time improve efficiency. The copper plating rinse solution was treated reliably by carbon foam adsorbent during 200 bed volume. The adsorbed copper was dissolved using desorption solution and recovered by DC power supply. After copper recovery, the reuse efficiency of desorption solution was 84.2%.

Improvement of the Throwing Power (TP) and Thickness Uniformity in the Electroless Copper Plating (무전해 동도금 Throwing Power (TP) 및 두께 편차 개선)

  • Seo, Jung-Wook;Lee, Jin-Uk;Won, Yong-Sun
    • Clean Technology
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    • v.17 no.2
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    • pp.103-109
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    • 2011
  • The process optimization was carried out to improve the throwing power (TP) and the thickness uniformity of the electroless copper (Cu) plating, which plays a seed layer for the subsequent electroplating. The DOE (design of experiment) was employed to screen key factors out of all available operation parameters to influence the TP and thickness uniformity the most. It turned out that higher Cu ion concentration and lower plating temperature are advantageous to accomplish uniform via filling and they are accounted for based on the surface reactivity. To visualize what occurred experimentally and evaluate the phenomena qualitatively, the kinetic Monte Carlo (MC) simulation was introduced. The combination of neatly designed experiments by DOE and supporting theoretical simulation is believed to be inspiring in solving similar kinds of problems in the relevant field.

Recovery of Copper in Wastewater from Electroless Plating Process (무전해(無電解) 구리 도금폐액(鍍金廢液)으로부터 구리의 회수(回收) 연구(硏究))

  • Lee, Hwa Young;Ko, Hyun Baek
    • Resources Recycling
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    • v.21 no.6
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    • pp.39-44
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    • 2012
  • An attempt to recover copper from electroless plating wastewater has been made through evaporation followed by the electrowinning method. From the determination of each element in electroless plating wastewater, the content of Cu was found to be 582 mg/l and small amount of Fe was also contained in it. Moreover, the content of COD and TOC which was resulted from the addition of Rochell salt was found to be 9,560 and 13,100 mg/l, respectively. The content of formic acid generated by the oxidation of formaldehyde was determined to be 7.73 %. As a result, current efficiency was decreased with increase in current density and therefore current density less than $40mA/cm^2$ should be maintained to obtain current efficiency more than 80 %. The content of Fe in Cu obtained by electrowinning was found to be 0.021 and 0.01 % at the concentration of sulfuric acid of 2 and 10 vol%, respectively.

Investigation of Ni/Cu Contact for Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에 적용하기 위한 도금법으로 형성환 Ni/Cu 전극에 관한 연구)

  • Kim, Bum-Ho;Choi, Jun-Young;Lee, Eun-Joo;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.250-253
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

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Electroless Plated Copper Thin Film for Metallization on Printed Circuit Board : Neutral Process (인쇄회로기판상의 금속 배선을 위한 구리 도금막 형성 : 무전해 중성공정)

  • Cho, Yang-Rae;Lee, Youn-Seoung;Rha, Sa-Kyun
    • Korean Journal of Materials Research
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    • v.23 no.11
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    • pp.661-665
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    • 2013
  • We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

Non-sintering Preparation of Copper (II) Oxide Powder for Electroplating via 2-step Chemical Reaction

  • Lee, Seung Bum;Jung, Rae Yoon;Kim, Sunhoe
    • Journal of Electrochemical Science and Technology
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    • v.8 no.2
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    • pp.146-154
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    • 2017
  • In this study, copper (II) oxide was prepared for use in a copper electroplating solution. Copper chloride powder and copper (II) oxide are widely used as raw materials for electroplating. Copper (II) oxide was synthesized in this study using a two-step chemical reaction. Herein, we developed a method for the preparation of copper (II) oxide without the use of sintering. In the first step, copper carbonate was prepared without sintering, and then copper (II) oxide was synthesized without sintering using sodium hydroxide. The optimum amount of sodium hydroxide used for this process was 120 g and the optimum reaction temperature was $120^{\circ}C$ regardless of the starting material.