• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.156-161
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• 2004

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1729-1730
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_{3}$ abrasive particles in CMP slurry.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.57-57
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• 2015

전해동박(Electrodeposited Copper Foil)은 전기도금 공정으로 제조되는 얇은 구리 포일로서, 주로 TV, PC, 스마트폰 등 전자제품의 인쇄회로기판에서 전기신호를 전달하는 회로소재로 사용이 되며, 최근에는 모바일 IT, 전기자동차, 지능형 로봇, 그린 에너지 산업 등에서 필수적으로 적용되는 소재로 이용이 급증하고 있는 핵심소재이다. FPCB/PCB용 전해동박은 최근 휴대폰, PC와 더불어 전 세계적으로 열풍이 불고 있는 스마트폰, 태블릿 등의 최신 전자 모바일기기의 보급이 가속화됨에 따라 해당 제품들의 다기능화, 고집적화가 진행되고 있으며, 5G 이후의 Mobile 기기를 중심으로 하는 차세대 전자기기의 소재 분야의 선점을 위해서 광폭(600 mm 이상) 제품 제조가 가능한 전해 동박으로 다양한 표면처리의 $18{\sim}2{\mu}m$ 급의 얇은 두께를 갖는 경제성이 확보된 고특성 동박이 필요로 되는 상황이다. 이와 더불어 PCB/FPCB에서 요구하는 동박기술의 소개 및 현재 연구 개발 Trend를 소개하고자 한다.

• Journal of Surface Science and Engineering
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• v.34 no.2
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• pp.142-150
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• 2001

Due to naturally formed copper oxides, the adhesion strength between copper and epoxy resin is often very poor. To improve the adhesion strength between copper and epoxy resin, Cu-based leadframe sheets were oxidized in a brown-oxide forming solution. Then the effect of brown-oxide formation on the adhesion strength of leadframe to epoxy molding compound (EMC) was studied using pull-out specimens. After the pull-out test, fracture surfaces were analyzed using SEM, AES and EDS to determine failure path. The results showed that the failure path lay over inside the CuO and inside the EMC irrespective of the pull strength.

• Journal of Surface Science and Engineering
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• v.26 no.5
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• pp.263-270
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• 1993

The effects of surfactants on electorless copper plating bath for PCB was studied. Basic bath composition was cuplic sulfate 10g/l, EDTA.2Na 40 g/l, formalin$ 3m\ell$/l and sodium hydroxide solution for pH adjust. After addition of accelerators, stabilizers and surfactants, the polarization curves in plating bath were carried out for presumption of the plating rate. From the plating rate in bath with the various concentration of additives, the optimum condition for manufacturing the electroless copper plating bath was confirmed. It was found that the addition of $\alpha$.$\alpha$'-dipyridyl, pyridine and polyxyethylene octylphenylether was good as stabilizer, accelerator and surfactants, respectively. With this additives, the maximum plating rate of $12\mu\textrm{m}$/h at $65^{\circ}C$ and $2\mu\textrm{m}$/h at $25^{\circ}C$ was obtained.

• Journal of Surface Science and Engineering
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• v.47 no.6
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• pp.275-281
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• 2014

An ultrasound-assisted Sn-Ag-Pd activation method for electroless copper plating was presented in this study. With this activation process, it was shown that the fine catalyst particles were homogeneously distributed with high density on the entire specimen. In addition, it was observed that incubation period occurred during the electroless plating step was decreased owing to the absorption of Ag which holds high catalytic activity. Resulting from the refinement and high densification of catalyst, the defect-free gap-fill was achieved within the 20x nm trench.

• Bulletin of the Korean Chemical Society
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• v.21 no.11
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• pp.1085-1089
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• 2000

The effect of 2-hydroxyacetophenone-aroyl hydrazone derivatives on the inhibition of copper corrosion in 3N nitric acid solution at 303 K was investigated by galvanostatic polarization and thermometric techniques. A significant decrease in the cor rosion rate of copper was observed in the presence of the investigated compounds. The corrosion rate was found to depend on the nature and concentrations of the inhibitors. The degree of surface coverage of the adsorbed inhibitors is determined from polarization measurements, and it was found that the results obey the Frumkin adsorption isotherm. The inhibitors acted as mixed-type inhibitors, but the cathode is more polarized. The relative inhibitive efficiency of these compounds has been explained on the basis of structure dependent electron donor properties of the inhibitors and the nature of the metal-inhibitor interaction at the surface. Also, some thermodynamic data for the adsorption process ( ΔGa* and f ) are calculated and discussed.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1129-1130
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• 2011

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.193-195
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• 2006