• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제30권10호
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• pp.651-655
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• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.194.1-194.1
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• 2016

The present study investigated the effect of zincate treatment time on the dissolution behavior and the deposition of copper by immersion process and electroplating process on AZ31 Mg alloy substrate in a copper pyrophosphate bath. Without zincate pretreatment, the AZ31 Mg substrate quickly dissolved in the copper pyrophosphate solution although an external cathodic current was applied. The copper layers deposited on non-zincate treated AZ31 Mg alloy substrate by both immersion and electroplating processes showed very porous structure and very poor adhesion. With increasing zincate treatment time up to 2 min, the dissolution of AZ31 substrate in pyrophosphate solution rapidly decreased and the deposited copper layer was less porous and exhibited stronger adhesion. The immersion of AZ31 Mg sample in zincate solution for 5 min was found as a critical time for producing a non-porous and adherent electrodeposited copper layer on AZ31 Mg alloy. The optimum zincating time can be determined by observing the open circuit potential (OCP) of AZ31 Mg alloy samples in a copper pyrophosphate electroplating bath. The OCP reached a stable value of about -0.10 V (vs. SCE) after 5 min of immersion in the copper pyrophosphate electroplating solution.

• Journal of information and communication convergence engineering
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• 제8권1호
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• pp.99-102
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• 2010

Large-scaled area and aligned copper oxide nanowires have been synthesized by a vapor-phase approach to the facial synthesis of copper oxide nanowires supported on the surface of a copper gasket. The effects of annealing temperature and time were investigated. Long and aligned nanowires can only formed within a narrow temperature range from 400 to $500^{\circ}C$ for 4 hrs. Annealing copper gasket in static air produces large-area, uniform, but not well vertically aligned nanowires along the copper gasket surface. The surface of copper gasket is converted into bicrystal CuO nanowires was observed after the copper gasket is annealed under static air condition.

• Journal of the Korean institute of surface engineering
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• 제5권1호
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• pp.1-7
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• 1972

Copper -clad laminate(CCL) was fabricated and evaluated by bonding 35${\pm}$5${\mu}$ thick electroplated copper foils with a suitable adhesive to an insulating base such as phenolic resin laminate. In this study, electroplating methods and conditions were studied to produced good quality copper foils for printed circuit board applications. The electroplating bath solutions used were a copper-sulfate solution and a concentrated copper fluoborate solution. A surface roughening treatment that improved the adhesive strength of copper foils with an insulating laminate was also developed . A conventional copper sulfate solution containing sulfuric acid was used for the roughening treatment.

• Korean Journal of Materials Research
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• 제17권1호
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• pp.56-59
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• 2007

Recently, requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. In this study, we evaluated the surface morphology, crystal phase ana surface roughness of the copper film electrodeposited by pulse method without using additives. Homogeneous and dense copper crystals were formed on the titanium substrate, and the optimum condition was 25% duty cycle. Moreover, the surface roughness(Ra), $0.295{\mu}m$, is the smallest value in this condition. It is thought that this copper foil is good for electromigration inhibition due to the preferential crystal growth of Cu (111)

• Journal of Sensor Science and Technology
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• 제26권2호
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• pp.122-127
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• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• Restorative Dentistry and Endodontics
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• 제17권2호
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• pp.287-306
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• 1992

The amounts of copper, mercury, silver, tin, and zinc released from conventional, dispersed phase and spherical high copper content amalgam immersed in artificial saliva soln. for periods of 2 hours, 1 day, 7 days, 30 days has been measured using Neutron Activation analysis and Atomic Absorption Spectrophotometry. The second electron image and EDX of the surface of samples immersed in artificial saliva were observed using SEM. The following results were obtained. 1. The dispersed non-$\gamma_2$ amalgam released more Hg, Ag than the $\gamma_2$-amalgams. Later a decrease of the release rate could be observed. 2. The dispersed high copper amalgam released more copper than low-copper amalgam and the release rate was decreased with time. But the amounts of copper released from Tytin increased with time. 3. Zinc was released all the experiment time. 4. EDAX showed that surface was composed of Ca,P, Sn, Ag, Zn, and Cu, but C1 was not detected. 5. The discontinued destructed surface was observed from the polished amalgam surface. High copper amalgam was destructed more than low copper amalgam.

• Journal of the Korean Society of Safety
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• 제14권1호
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• pp.86-92
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• 1999

This study was carried out to investigate the effect of chemical cleaning of corrosion product on cooling system made of copper as a basic material and using cooling water as pure water. We studied chemical cleaning condition that minimizes the influence on basic material by means of EDTA solution so as to eliminate the slurry in cooling system. In addition, the proper amount of NALCO-39L (Nitrite-Borate-BZT mixture) as a inhibitor was determined in order to protect the copper in cooling system against corrosion after chemical cleaning and the effect of corrosion resistance on the copper surface treated was excelent in comparison with surface untreated. As a result, we found that the main components of sludge in cooling system produced by corrosion of copper were $Cu_2O$, CuO, Cu, and Fe. The optimum condition of chemical cleaning was 400ppm EDTA solution at $60^{\circ}C$. Inhibitor concentration needed to treat the surface of pure copper was 15～20ppm per unit area and corrosion rate of copper treated with 500ppm inhibitor solution for 72 hrs at $60^{\circ}C$ was remarkably decreased as compared with that of pure copper.

• Journal of Korea Foundry Society
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• 제14권6호
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• pp.558-565
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• 1994

The horizontal continuous casting process with the heated mold was applied to obtain the unidirectionally solidified rods($4{\sim}8mm$ dia.) of pure copper with good surface quality. The results could be summarized as follows. 1. The unidirectional solidification of pure copper rods with good surface(mirror surface) quality could be obtained by placing the S/L interface inside the heated mold cavity even though the cast copper rods were covered with thin copper oxide layer. 2. The casting speed for 4mm dia. rods with mirror surfaces was affected significantly by the mold-cooler distance rather than the cooling flow rate when other casting conditions were fixed. 3. The casting speed was the main factor affecting the oxidation of copper during the continuous casting and the thickness of copper oxide layer decreased almost linearly as the casting speed increased.

• Journal of the Korean institute of surface engineering
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• 제29권6호
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• pp.803-808
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• 1996

Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.