• Journal of Environmental Health Sciences
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• v.30 no.2
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• pp.115-122
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• 2004

A glassy carbon electrode(GCE) modified with nafion-DTPA (diethylene triamine-pentaacetic acid)-glycerol is used for the highly selective and sensitive determination of a trace amount of Cu(II). Various experimental parameters, which influenced the response of nafion-DTPA-glycerol modified electrode to Cu(II), are optimized. The Copper(II) is accumulated on the electrode surface by the formation of the complex in an open circuit, and the resulting surface is characterized by medium exchange, electrochemical reduction, and differential pulse voltammetry(DPV). The electrochemical response is evaluated with respect to concentration of modifier, pH and preconcentration time, quiet time, copper(II) concentration, and other variables. A linear range is obtained in the concentration range 1.0${\times}$10$^{-8}$ M-1.0${\times}$10$^{-6}$ MCu(II) with 7 min preconcentration time. The detection limit(3s) is as low as 2.36${\times}$10$^{-8}$ M (1.50 ppb).

• Journal of the Korean institute of surface engineering
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• v.17 no.1
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• pp.1-6
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• 1984

The fluidized bed electrode reactor(FBER) with conducting particles has been made use of the removal of metals from dilute electroplating rinse water. The electrolysis was carried out under the conditions of diaphragm current density with 2~28A/$dm^2$ and bed expansion with 20~50%. Recirculating batch operations have been shown that the metal concentration dropped exponentially and may be taken down to 10 ppm. And then, the current efficiency at a concentration of 10 ppm copper was 37% under the conditions of 30% bed expansion and 6 A/$dm^2$, and at concentrated electrolyte (2000ppm copper) was over 80% in the range of 8~28A/$dm^2$ and 20~50% bed expansion. One of the technical possibilities of fluidized bed electrolysis is the separation of copper and nickel from a mixed solution of copper and nickel.

• Journal of ILASS-Korea
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• v.25 no.2
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• pp.68-73
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• 2020

In the present study, experiments on the film boiling of liquid droplets on oxidized copper surface was conducted. The shape of pure water droplets was observed, and the evaporation rate of them was measured during the film boiling evaporation process. The droplet of initial volume 16 ~ 30 µl was applied onto the oxidized copper surface heated up to 300 ~ 500℃, then the shape of the droplet was analyzed during the film boiling evaporation. Experimental results showed that there was good correlation between dimensionless volume and dimensionless time. However, a significant difference in evaporation rate for small and large droplets discussed in previous study was not found.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.445-449
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• 2008

Micrometer-sized copper (mCu) powders are weakly surface-enhanced Raman scattering (SERS) active by the excitation at 632.8 nm, but nearly ineffective as a SERS substrate at 514.5 nm excitation. The SERS activity of mCu powders at both excitation wavelengths can be increased dramatically by a simple method of the galvanic exchange reaction with AgNO3 in aqueous medium. In this work, the SERS activity of the Ag-exchanged Cu powders (mCu@Ag) has been evaluated by taking a series of Raman spectra using benzenethiol (BT) as the probe molecule. It is clearly confirmed by field emission scanning electron microscopy and X-ray diffractometry that the SERS activity of mCu@Ag powders is, in fact, highly dependent on the extent of galvanic reaction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.163-163
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• 2015

본 연구는 금속 캐리어 소재상에 화학 동도금(Chemical Copper)으로 형성된 극박 동박 표면 및 석출막의 특성을 평가하기 위하여 다양한 진공 분석장비들을 활용하여 평가한 결과이다. 연구에 사용된 극박 동박은 현재 캐리어박 선점률이 높은 M, J, Y사의 제품이다. 최상층 구리 표면에서 조직, 조성, 표면조도를 평가하였고, 계면 평가에서는 copper layer 및 nodule layer, adhesion layer, anti-corrosion layer, release layer, substrate에서의 물성 및 특성 정밀평가 결과 각 특성치 및 구조는 Cr, Zn, Ni, Co, Cr계 thermal anti layer임의 확인이 가능하였다.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.192-200
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• 2023

Graphene, a two-dimensional material, has shown great potential in a variety of applications including microelectronics, optoelectronics, and graphene-based batteries due to its excellent electronic conductivity. However, the production of large-area, high-quality graphene remains a challenge. In this study, we investigated graphene growth on electrolytic copper foil using thermochemical vapor deposition (TCVD) to achieve a similar level of quality to the cold-rolled copper substrate at a lower cost. The combined effects of pre-annealing time, graphenized temperature, and partial pressure of hydrogen on graphene coverage and domain size were analyzed and correlated with the roughness and crystallographic texture of the copper substrate. Our results show that controlling the crystallographic texture of copper substrates through annealing is an effective way to improve graphene growth properties, which will potentially lead to more efficient and cost-effective graphene production. At a hydrogen partial pressure that is disadvantageous in graphene growth, electrolytic copper had an average size of 8.039 ㎛², whereas rolled copper had a size of 19.092 ㎛², which was a large difference of 42.1% compared to rolled copper. However, at the proper hydrogen partial pressure, electrolytic copper had an average size of 30.279 ㎛² and rolled copper had a size of 32.378 ㎛², showing a much smaller difference of 93.5% than before. This observation suggests this potentially leads the way for more efficient and cost-effective graphene production.

• Journal of the Korean Applied Science and Technology
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• v.32 no.3
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• pp.512-521
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• 2015

In this research, environmental friendly organic acid containing microetching system to improve adhesion strength between photoresist resin and Copper Clad Laminate(CCL) was developed without using strong oxidant $H_2O_2$. Etching rate and surface contamination on CCL were examined with various etching conditions with different etchants, organic acids and additives. to develope an optimum microetching condition. Etching solution with 0.04 M acetic acid showed the highest etching rate $0.4{\mu}m/min$. Etching solution with the higher concentration of APS showed the higher etching rate but surface contamination on CCL is very serious. In addition, stabilizer solution also played an important role to control the surface contamination. As a result of research, the etching solution containing 0.04 M of acetic acid, 0.1 M of APS with 4 g/L of stabilizer solution(ST-1) was best to improve adhesion between CCL and photoresist resin as well as showed the most clean and rough surface with the etching rate of $0.37{\mu}m/min$.

• Journal of the Korean Electrochemical Society
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• v.18 no.3
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• pp.130-135
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• 2015

The rate capability and low-temperature characteristics of graphite electrode are investigated after surface treatment with copper phthalocyanine (CuPc) or phthalocyanine (Pc). Uniform coating layers comprising amorphous carbon or copper are generated after the treatment. The rate performance of graphite electrodes is enhanced by the surface treatment, which is more prominent with CuPc. The resistance of the graphite electrode estimated from electrochemical impedance spectroscopy and pulse resistance measurement is the smallest for the CuPc-treated graphite. It is likely that the amorphous carbon layer formed by the decomposition of Pc facilitates $Li^+$ diffusion and the metallic copper derived from CuPc improves the electrical conductivity of the graphite electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.