• Journal of Industrial Technology
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• v.20 no.B
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• pp.77-86
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• 2000

In order to observe the pattern forming of copper plate and chemical corrosion reaction, a study on the effect of the process parameters on the formation of micro-pattern by a photochemical etching of copper plate was carried out. The results are as follows : 1) Etching rate increases as the concentration of etchant increases under the regular condition of the temperature by the increasing of diffusion rate to surface. 2) Etching rate increases as the temperature of etchant increases by the fast acting of the material delivery of diffusion to surface under the regular condition of concentration. 3) It was found that etching speed increases as the material delivery of convection rising increased when the aeration speed of etchant increases. This result was from the fact acted by the material delivery of convection rising rather than material delivery of diffusion to the surface.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.8
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• pp.99-109
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• 2022

In this study, an electric resistance-heated surface friction spot-welding process was proposed and tested for the spot-welding ability of copper and aluminum dissimilar metal sheets using electric resistance heating and surface friction heating. This process has welding variables, such as the current value, energizing cycles, rotational speed, and friction time. The current value and energizing cycle can affect the resistance heat, and the rotational speed of the rotating pin and friction time influence frictional heat generation. Resistance heating before friction heating has a preheating effect on the Cu-Al contact interface and a positive effect on preventing friction heat loss during the friction stage. However, because resistance preheating can soften the copper sheet and affect the contact stress and friction coefficient, it has difficulties that may adversely affect frictional heat generation. Therefore, the optimal combination of welding variables should be determined through simulations and experiments of the spot-welding process to determine the effects of electric resistance preheating on the suggested process. Through this procedure, it is known that the proposed spot-welding process can improve the welding quality during the spot welding of Cu-Al sheets.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.217-220
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• 2009

Conductive adhesives have been investigated for use in microelectronics packaging as a lead-free solder substitute due to their advantages, such as low bonding temperature. However, high resistivity and poor mechanical behavior may be the limiting factors for the development of conductive adhesives. The metal fillers and the polymer resins provide electrical and mechanical interconnections between surface mount device components and a substrate. As metal fillers used in conductive adhesives, silver is the most commonly used due to its high conductivity and the stability. However the cost of conductive adhesives with silver fillers is much higher than usual lead-free solders and silver has poor electro-migration performance. So, copper can be a promising candidate for conductive filler metal due to its low resistivity and low cost, but oxidation causes this metal to lose its conductivity. In this study, electrically conductive adhesives (ECAs) using surface modified copper fillers were developed. Especially, in order to overcome the problem associated with the oxidation of copper, copper particles were coated with silver, and the silver-coated copper was tested as a filler metal. Especially the effect of silver coating on the electrical resistance just after curing and after aging was investigated. As a result, it was found that the electrical resistance of ECA with silver-coated copper filler was clearly lower and more stable than that of ECA with pure copper filler after curing process. And, during high temperature storage test, the degradation rate of electrical resistance for ECA with silver coated copper filler was quite slower than that for ECA with pure copper filler.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.98-102
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• 2005

This article describes a study of chemical vapor deposition (CVD) of copper thin films on TiN substrates using (HFAC)Cu(DMB) as a precursor. The surface morphology and conformality of the Cu films as functions of substrate temperature and the presence or absence of iodine have been investigated. The surface roughness was increased significantly along with decrement of the step coverage by increasing the deposition temperature. The highest conformal films with the lowest surface roughness were obtained using the process of copper CVD, where iodine vapor were discretely introduced into the reactor during the growth of copper.

• Carbon letters
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• v.2 no.1
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• pp.15-21
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• 2001

In this work, activated carbon fibers (ACFs) were plated with copper metal using electroless plating method and the effects of surface properties and pore structures on chromium adsorption properties were investigated. Surface properties of ACFs have been characterized using pH and acid/base values. BET data with $N_2$ adsorption were used to obtain the structural parameters of ACFs. The electroless copper plating did significantly lead to a decrease in the surface acidity or to an increase in the surface basicity of ACFs. However, all of the samples possessed a well-developed micropore. The adsorption capacity of Cr(III) for the electroless Cu-plated ACFs was higher than that of the as-received, whereas the adsorption capacity of Cr(VI) for the former was lower than that of the latter. The adsorption rate constants ($K_1$, $K_2$, and $K_3$) were also evaluated from chromium adsorption isotherms. It was found that $K_1$ constant for Cr(III) adsorption depended largely on surface basicity. The increase of Cr(III) adsorption and the decrease of Cr(VI) adsorption were attributed to the formation of metal oxides on ACFs, resulting in increasing the surface basicity.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.206-212
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• 1997

The reflow characteristics of copper, which is expected to be used as interconnection materials in the next generation semiconductor devices, were investigated. Copper films were deposited on hole and trench patterns by metal organic chemical vapor deposition and annealed in nitrogen and oxygen ambient with the annealing temperatures ranging from $350^{\circ}C$ to $550^{\circ}C$. Copper films were not reflowed into the patterns upon the annealing in nitrogen ambient, but reflowed at the annealing temperature higher than $450^{\circ}C$ in oxygen ambient. It is considered that the reflow takes place as the heat generated by the oxidation of copper liquefies the copper film partly and the liquid copper fills the patterns for minimizing the surface energy and the potential energy. Upon the annealing in oxygen ambient, the copper oxide whose thickness was less than 300$\AA$ formed at the surface of an agglomerate and the resistivity of copper film increased drastically at an annealing temperature of $550^{\circ}C$ due to the copper agglomeration.

• Membrane and Water Treatment
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• v.9 no.6
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• pp.481-487
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• 2018

Membrane clogging or fouling of the membrane caused by organic, inorganic, and biological on the surface is one of the main obstacles to achieve high flux over a long period of the membrane filtration process. So researchers have been many attempts to reduce membrane fouling and found that there is a close relationship between membrane surface hydrophilicity and membrane fouling, such that the same conditions, a greater hydrophilicity were less prone to fouling. Nanotechnology in the past decade is provided numerous opportunities to examine the effects of metal nanoparticles on the both hydrophilic and antibacterial properties of the membrane. In the present study the improvement of hydrophilic and antimicrobial properties of the membrane was evaluated by adding nanoparticles of titanium dioxide and copper oxide. For this purpose, 4% copper oxide and titanium dioxide nanoparticles with a ratio of 0, 30, 50, and 70% of copper oxide added to the polymeric membrane and compare to the pure polymeric membrane. Comparison experiments were performed on E. coli PTCC1998 in two ways disc and tube and also to evaluate membrane hydrophilic by measuring the contact angle and diameter of pores and analysis point SEM has been made. The results show that the membrane-containing nanoparticle has antibacterial properties and its impact by increasing the percentage of copper oxide nanoparticles increases.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.518-522
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• 2013

This study investigatesthe coloration mechanism by identifying the factor that affects thered coloration of copper red glazesin traditional Korean ceramics. The characteristics of the reduction-fired copper red glaze's sections are analyzed using an optical microscope, Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The sections observed using an optical microscope are divided into domains of surface, red-bubble, and red band. According to the Raman micro spectroscopy analysis results, the major characteristic peak is identified as silicate in all three domains, and the intensity of $Cu_2O$ increases toward the red band. In addition, it is confirmed that the most abundant CuO exists in the glaze bubbles. Moreover, CuO and $Cu_2O$ exist as fine particles in a dispersed state in the surface domain. Thus, Cu combined with oxygen is distributed evenly throughout the copper red glaze, and $Cu_2O$ is more concentrated toward the interface between body and glaze. It is also confirmed that CuO is concentrated around the bubbles. Therefore, it is concluded that the red coloration of the copper red glaze is revealed not only through metallic Cu but also through $Cu_2O$ and CuO.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.124-132
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• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.