• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• 전기화학회지
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• 제27권1호
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• pp.15-31
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• 2024

The antimalarial drug hydroxychloroquine sulphate (HCQ) has taken much attention during the first COVID-19 pandemic phase for the treatment of severe acute respiratory infection (SARI) patients. Hence it is interest to study the electrochemical properties and photocatalytic degradation of the HCQ drug. Copper oxide (CuO) nanoparticles, graphene oxide (GO) and CuO/GO NC (nanocomposite) modified carbon paste electrodes (MCPE) are used for the detection of HCQ in an aqueous medium. Electrochemical behaviour of HCQ (20 μM) was observed using CuO/MCPE, GO/MCPE and CuO/GO NC/MCPE in 0.1 M phosphate buffer at pH 7 with a scan rate of 20 to 120 mV s^-1 by cyclic voltammetry (CV). Differential pulse voltammetry (DPV) of HCQ was performed for 0.6 to 16 μM HCQ. The CuO/GO NC/MCPE showed a reasonably good sensitivity of 0.33 to 0.44 μA μM cm^-2 with LOD of 69 to 92 nM for HCQ. Furthermore, the CuO/GO NC was used as a catalyst for the photodegradation of HCQ by monitoring its UV-Vis absorption spectra. About 98% was degraded in about 34 min under visible light and after 4 cycles it was 87%. The improved photocatalytic activity may be attributed to decrease in bandgap energy and enhanced ability for the electrons to migrate. Thus, CuO/GO NC showed good results for both sensing and degradation applications as well as reproducibility.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• 한국재료학회지
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• 제10권2호
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• pp.160-165
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• 2000

Sputter Cu(1-4.5at.%Mg) alloy를 100mTorr이하의 산소압력에서 온도를 증가시키며 열처리하였을 때 표연과 계면에서 형성된 MgO의 확산방지막 특성을 살펴보았다 먼저, $Cu(Mg)/SiO_2/Si$ 구조의 샘플을 열처리했을 때 계면에서는 $2Mg+SiO_2{\rightarrow}2MgO+Si$의 화학반응에 의해 MgO가 형성되는데 이 MgO충에 의해 Cu가 $SiO_2$로 확산되는 것이 현저하게 감소하였다. TiN/Si 기판 위에서도 Cu(Mg)과 TiN 계면에 MgO가 형성되어 Cu(4.5at.%Mg)의 경우 $800^{\circ}C$까지 Cu와 Si의 확산을 방지할 수 있었다. 표면에 형성된 MgO위에 Si을 증착하여 $Si/MgO(150\;{\AA})/Cu(Mg)/SiO_2/Si$구조로 만든 후 열처리했을 때 $150\;{\AA}$의 MgO는 $700^{\circ}C$까지 Si과 Cu의 확산을 방지할 수 있었다. 표면에 형성된 MgO($150\;{\AA}$)의 누설전류특성은 break down 5V, 누설전류 $10^{-7}A/\textrm{cm}^2$의 값을 나타냈다. 또한 $Si_3N_4/MgO$ 이중구조에서는 매우 낮은 누설전류밀도를 나타냈으며 MgO에 의해 $Si_3N_4$ 증착시 안정적인 계면이 형성됨을 확인하였다.

• Journal of Electrochemical Science and Technology
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• 제9권4호
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.71-78
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• 2023

외부로부터 전원이 인가되지 않은 바이폴라 전극의 정량적 고찰을 통해 도금 두께 산포 개선의 가능성을 살펴보고자 하였다. 헐셀은 양극에 대해 기울어진 음극을 가짐으로써, 음극의 각 영역에서 양극에 대한 경로차에 의한 iR drop의 차이로 음극 근처의 전해액에서는 전위 분포가 다르게 되어 한눈에 다양한 반응 과전압에서의 전기화학적 반응성을 평가할 수 있다. 본 연구는 이러한 헐셀의 불균일한 전위분포에 대해 보조 양극이 있는 경우에 바이폴라 특성을 관찰하고자 하였다. 특히 이러한 바이폴라 특성을 활용하여 음극의 불균일 두께 산포를 개선할 수 있는 가능성을 평가하기 위해, 실험 및 시뮬레이션을 통해 검증하였으며, 이를 통해 바이폴라가 형성된 주변의 전위 및 전류밀도 분포를 분석해 보았다. 10 mA/cm² 전류밀도로 75분동안 도금을 진행하여, 평균 두께가 약 16 ㎛로 도금을 진행하였다. 보조 양극을 사용하지 않은 일반 헐셀에서는 두께의 표준 편차가 10 ㎛인 반면에 보조 양극을 사용한 경우에는 3.5 ㎛로 나타났다. 시뮬레이션 계산에서도 8.9 ㎛와 3.3 ㎛로 나타났으며, 비교적 실험결과와 시뮬레이션 결과의 정합성이 높은 것으로 나타났다. 이러한 보조 양극을 통해 외부에서 전원 인가를 하지 않더라도 바이폴라 현상에 의해 두께 산포가 개선될 수 있음을알 수 있었다.

• 한국수산과학회지
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• 제14권2호
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• pp.94-102
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• 1981

해수에서 전기 전도성이 있는 산화 피막전극을 사용하여 금속 산화피막 전극들의 특성과 발암성 원인물질인 DBNA의 전극 반응성을 규명하는데 필요한 기초자료를 potential drop방법과 galvanostatic방법으로 얻어서 다음과 같은 결론을 내렸다. 1) $9\%_{\circ}$해수에 음극반응 억제제 DBNA를 첨가한 경우 알루미늄 산화피막 전극과 아연 산하피막 전극은potential drop현상을 나타내지 못 했으나 납 산화피막 전극과 구리 신화피막 전극은 피막전극으로서 적합한 기능을 가졌음을 알았다. 2) 제1단계 음극반응의 transition time이 $0.22\sim1.40sec$범위의 1분이내 값이므로 산화피막을 통과한 양성자는 확산$\rightarrow$흡착과정의 음극반응을 했다. 3) 0.5M NaCl수용액과 $9\%_{\circ}$해수에서 얻어진 transition time 값들이 대체로 일치한 것은 금속의 종류에 관계없이 산화피막을 통과한 양성자의 확산속도가 인정전류밀도 범위에서 인정하였기 때문이다. 4) $1.9\times10^{-4}\sim5.0\times10^{-6}\;amp/cm^2$의 전류밀도 범위에서 해수와 해수에 억제제 DBNA를 첨가했을때 얻어진 $\tau_{1}/4$값들의 $E_{1}/4$값들의 차가 각각 0.06sec와 0.53v있으므로, 억제 DBNA의 음극반응은 주로 흡착$\rightarrow$확산과정 이었다. 5) 알루미늄 산화피막과 아연 산화피막의 표면에 흡착된 전재질의 흡착량이 납 산화피막과 구리 산화피막보다 많은 것은 피막표면에 생성된 불규칙한 기공 생성 수가 증가하였기 때문이다.