• Restorative Dentistry and Endodontics
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• v.18 no.2
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• pp.431-445
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• 1993

The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

• Journal of Microbiology and Biotechnology
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• v.28 no.8
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• pp.1360-1366
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• 2018

The fungi associated with termites secrete enzymes such as laccase (multi-copper oxidase) that can degrade extracellular wood matrix. Laccase uses molecular oxygen as an electron acceptor to catalyze the degradation of organic compounds. Owing to its ability to transfer electrons from the cathodic electrode to molecular oxygen, laccase has the potential to be a biocatalyst on the surface of the cathodic electrode of a microbial fuel cell (MFC). In this study, a two-chamber MFC using the laccase-producing fungus Galactomyces reessii was investigated. The fungus cultured on coconut coir was placed in the cathode chamber, while an anaerobic microbial community was maintained in the anode chamber fed by industrial rubber wastewater and supplemented by sulfate and a pH buffer. The laccase-based biocathode MFC (lbMFC) produced the maximum open circuit voltage of 250 mV, output voltage of 145 mV (with a $1,000{\Omega}$ resistor), power density of $59mW/m^2$, and current density of $278mA/m^2$, and a 70% increase in half-cell potential. This study demonstrated the capability of laccase-producing yeast Galactomyces reessii as a biocatalyst on the cathode of the two-chamber lbMFC.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.11 no.4
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• pp.189-202
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• 2000

$AB_2$ type Zr-based Laves phases alloys have been studied for potential application as a negative electrode in a Ni-MH battery. The $AB_2$-type electrodes have a much higher energy density than $AB_5$-type electrodes per weight, however they have some disadvantages such as poor activation behavior and cycle life etc. Nonetheless, the $AB_2$-type electrodes have been studied very extensively due to their high energy density. In this study, in order to develop the cycle life, the Mn of $AB_2$ alloy composition was substituted partially by Mo. The alloys were melted by arc furnace and remelted 4-5 times for homogeneity. The alloy powder was used below 200-325 mesh for experiments. The structures and phases of the alloys were analyzed by XRD, SEM and EDS, and measured the curve of a pressure-composition isotherms. The electrodes were prepared by cold pressing of the copper-coated(25 wt%) alloy powders, and tested by a half cell. The results are summarized as follows. The cycle life was improved with the increase of Mo amount in $Zr_{1-x}Ti_xV_{0.4}Ni_{1.2}Mn_{0.4}Mo_y$(x=0.3, 0.4) and the activation was faster, whereas the discharge capacity decreased.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• Restorative Dentistry and Endodontics
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• v.23 no.1
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• pp.502-514
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• 1998

The purpose of this study is to observe the corrosion characteristcs of four dental amalgams(CAULK FINE CUT, CAULK SPHERICAL, DISPERSALLOY, TYTIN) and to determine a function of chloride concentration through the anodic polarization curve obtained by using a potentiostat. After each amalgam alloy and Hg being triturated, the triturated mass was inserted into the cylinderical metal mold, and condensed by hydrolic pressure. Each specimen was removed from the metal mold. 24 hours after condensation, specimens were polished with the emery paper and stored at room temperature for 6 months. The anodic polarization curves were employed to compare the corrosion behaviours of the amalgam m KCl and KCl-NaCl solution, which had chlonde concentration of 0.4 g/l, 0.8 g/l, 1.2 gil, and 1.6 gil at $37^{\circ}C$ with 3-electrode potentiostat. After the immersion of specimen in electrolyte for 1 hour, the potential scan was begun. The potential scan range was - 1500mV ~+800mV(vs. S.C.E.) in the working electrode and the scan rate was 50mV/sec. The results were as follows, 1. The corrosion potential. the potential of anodic current peak, and transpassive potential in the solution of high chloride concentration shifted to more cathodic direction than those in the solution of low concentration, and the current density in the solution of high chloride concentration was higher than that in the solution of low concentration. 2. The corrosion potential, the potential of anodic current peak, and transpassive potential for CAULK FINE CUT amalgam were the most cathodic among the others, and the current density were the highest among the others. 3. In the solution of low chloride concentration, the corrosion potential, the potential of anodic current peak, and transpassive potential for DISPERSALLOY were the most anodic among the others, however in the solution of high chloride concentration, those for TYTIN were the most anodic among the others. 4. The anodic polarization curve for CAULK SPHERICAL was similar to that for high copper amalgams.

• Journal of the Korean institute of surface engineering
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• v.55 no.3
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• pp.180-186
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• 2022

The production of hydrogen via water electrolysis (i.e., green hydrogen) using renewable energy is key to the development of a sustainable society. However, most current electrocatalysts are based on expensive precious metals and require the use of highly purified water in the electrolyte. We demonstrated the preparation of a non-precious metal catalyst based on CuCo₂O₄ (CCO) via simple electrodeposition. Further, an optimization process for electrodeposition potential, solution concentration and electrodeposition method was develop for a catalyst-substrate integrated electrode, which indicated the highly electrocatalytic performance of the material in electrochemical tests and when applied to an anion exchange membrane water electrolyzer.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Resources Recycling
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• v.27 no.5
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• pp.14-22
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• 2018

In this study, scarp of PCB containing copper and precious metals was manufactured as an anode, and electrorefining experiments were conducted on change of $H_2SO_4$ concentration and current density. Through electrolytic refining experiments, the concentration of Cu and slime recovered from each electrode was analyzed, element behavior was confirmed, and current efficiency was also calculated. As the $H_2SO_4$ concentration was increased, the current efficiency and the purity of Cu decreased, but the precious metals in the anode slime were maximally concentrated with 2.0 M $H_2SO_4$. In addition, as the current density was increased, the current efficiency decreased and the purity of Cu showed a tendency to increase, and the precious metals in the anode slime were maximally concentrated with $300A/m^2$. As a result of the pilot scale experiments, the Au content was 8,705 mg/kg, the Ag content was 35,092 mg/kg in the anode slime. As compared with the initial content, Au was concentrated 16 times and Ag concentrated 14 times.

• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.