• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.400-400
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• 2009

In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for atmospheric conditions with modem diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in atmosphere. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in atmosphere generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, air). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of epoxy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.373-380
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• 2019

In this paper, we report the preparation of a flexible, self-standing and binder-free carbon nanotubes (CNTs) electrode with an electro-generated current collector. The copper current collector layer was electrodeposited on the backside of CNTs self-standing film obtained by a simple filtration process. The obtained CNTs-Cu assembly was used as a negative electrode in Li-ion batteries exhibiting good performance along with proving its applicability in flexible batteries.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.923-928
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• 2001

An electrolytic silver plating process has been successfully developed for terminated electrode parts of dielectric ceramic resonator. High adhesion strength and high Qu is obtained and blister occurance is minimized under plating condition with $HNO_3$750 $m\ell/\ell$ and HF $ 250m\ell/\ell$ solution at $25^{\circ}C$ for 20 minutes. Adhesion strength has the highest value, 3.2 kg/mm$^2$ at etching temperature of $25^{\circ}C$. Adhesion strength, Qu and blister occurance are monotonically increased with the thickness of electrodeposition layer. In case of electrodeposition of Ag, Qu value of 380 has obtained higher than in case of electrolytic Cu plating with Qu value of 325. Therefore, terminated electrode parts of dielectric ceramic resonator reducing dielectric loss can be obtained using prensent process.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1471_1472
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• 2009

In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for vacuum conditions with modern diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in vacuum. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in vacuum generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, vacuum). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of insulator at results, surface flashover influenced only insulator surface condition. and increasing vacuum pressure was risen breakdown voltage.

• Journal of Powder Materials
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• v.10 no.5
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• pp.337-343
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• 2003

Nanostructured Cu-$Al_2O_3$ composite powders were synthesized by thermochemical process. The synthesis procedures are 1) preparation of precursor powder by spray drying of solution made from water-soluble copper and aluminum nitrates, 2) air heat treatments to evaporate volatile components in the precursor powder and synthesis of nano-structured CuO + $Al_2O_3$, and 3) CuO reduction by hydrogen into pure Cu. The suggested procedures stimulated the formation of the gamma-$Al_2O_3$, and different alumina formation behaviors appeared with various heat treating temperatures. The mean particle size of the final Cu/$Al_2O_3$ composite powders produced was 20 nm, and the electrical conductivity and hardness in the hot-extruded bulk were competitive with Cu/$Al_2O_3$ composite by the conventional internal oxidation process.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.9
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• pp.443-448
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• 2006

Non-contacting capacitive sensor based on Thompson-Lampard theorem have been fabricated and characterized for measuring of 때 order displacements. To overcome disadvantages of the existed capacitive sensors of parallel plate type with 2-electrodes and 3-electrodes, the developed new sensor was designed to have 4-electrodes with a constant gap of 0.2mm between the electrodes. Two of the electrodes were used as a high potential electrode and a low one, the other two electrodes were used as guard electrodes. These electrodes were made from copper using RF sputtering system on a sapphire plate with diameter 17 mm and thickness 0.7 mm. This sensor can be used for measuring the distance not only between the sensor and metallic target connected to ground potential but also non-metallic target without ground connection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.934-937
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.410-411
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.