• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.64-64
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• 2009

As the advanced packaging technology developing, Copper electro-plating processing has be wildly utilized in the semiconductor interconnect technique. Chemical solution monitoring methods, including PH and gravity measurement exist in industry, but economical and practical real-time monitoring has not been achieved yet. Red-green-blue (RGB) color sensor can successfully monitor the condition of $CuSO_4$ solution during electric copper plating process. Comparing the intensity variations of the RGB data and optical spectroscopy data, strong correlation between two in-situ sensors have shown.

• Resources Recycling
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• v.5 no.3
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• pp.31-36
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• 1996

The metallic copper was recovered from sludge of the copper electro-plating plant by pyrometallurgical process. The reducing agent was Pyrolysized from waste tires and the flux was a mixture $Na_2CO_3$, $NaB_4O_7$, and glass. The green sludge contained 87.5% moisture and 12.5% solid with 56.5% Cu and 1.59% Fe. The sludge dried at $100^{\circ}C$ was analyized to be $Cu_4SO_4(OH)_6{\cdot}2H_2O$ and CuO by XRD analysis. The former was 84% and the latter 16%, However, the calcined sludge at $500^{\circ}C$ was 49% $Cu_2O(SO_4)$ and 51% CuO. The sludge could by smelted at $1100^{\circ}C$ for two hours with 6 to 8 moles carbon with respect to copper to produce metallic copper (>90%) with recovery of 9% above.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• International Journal of Quality Innovation
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• v.2 no.2
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• pp.69-92
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• 2001

The laser-assisted seeding (LAS) process has potential to replace conventional electroless copper plating in Printed Circuit Board (PCB) manufacturing since it combines the steps of laser drilling and plating into one single process. In the LAS process, the single extra LAS step can metallize a microvia. Thus, the process steps can be greatly reduced and the productivity enhanced, but also the high aspect ratio microvias can be metallized. The objectives of this paper are to study the LAS copper thickness within PCB microvias and the thermal reliability of the microvias produced by this process. It was found that results were satisfactory in both the reliability test and also the LAS copper thickness which both comply with IPC standard, the copper thickness produced by the LAS process is sufficient for subsequent electro-plating process. The reliability of the microvias produced by LAS process is acceptable which are free from any voids, corner cracks, and distortion in the plated copper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.125-126
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• 2005

Recently semiconductor devices are required more smaller scale and more powerful performance. For smaller scale of device, multilayer structure is proposed. And, for the higher performance, interconnection material is change to copper, because copper has high EM(Electro-migration)and low resistivity. Then copper CMP process is a great role in a multilayer formation of semiconductor. Copper process is different from aluminum process. ECP process is one of the copper processes. In this paper, we focused on the defects tendency by copper thickness which filled using ECP process. we observed hump high and dishing. Conclusively, hump hight reduced at copper thickness increased Also dishing reduced.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.217-221
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• 2015

Developing a metallization that has low cost and high efficiency is essential in solar-cell industries, to replace expensive silver-based metallization. Ni/Cu two-step metallization is one way to reduce the cost of solar cells, because the price of copper is about 100 times less than that of silver. Alkaline electroless plating was used for depositing nickel seed layers on the front electrode area. Prior to the nickel deposition process, 2% HF solution was used to remove native oxide, which disturbs uniform nickel plating. In the subsequent step, a nickel sintering process was carried out in $N_2$ gas atmosphere; however, copper was plated by light-induced plating (LIP). Plated nickel has different properties under different bath conditions because nickel electroless plating is a completely chemical process. In this paper, plating bath conditions such as pH and temperature were varied, and the metal layer's structure was analyzed to investigate the adhesion of Ni/Cu metallization. Average adhesion values in the range of 0.2-0.49 N/mm were achieved for samples with no nickel sintering process.

• Membrane and Water Treatment
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• v.11 no.3
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• pp.201-206
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• 2020

Electrodialysis (ED) is used in wastewater treatment, during the processing and recovery of beneficial materials, to produce usable water. In this study, sulfate and chlorine ions, which are the anions majorly used for electroplating, were studied as factors affecting the recovery of copper, nickel and water from wastewater by electrodialysis. Although the removal rates of copper and nickel ions were slightly higher with the use of chlorine ions than of sulfate ions, the removal efficiencies were above 99.9% under all experimental conditions. The metal ions of the plating wastewater flowed through the ion exchange membrane of the diluate tank and the concentrate tank while all the water moved together due to electro-osmosis. The migration of water from the diluate tank to the concentrate tank was higher in the presence of a monovalent chloride ion compared to that of a divalent sulfate ion. When sulfate was the anion used, the recoveries of copper and nickel increased by about 25% and 30%, respectively, as compared to the chloride ion. Therefore, when divalent ions such as sulfate are present in the electrodialysis, it is possible to reduce the movement amount of water and highly concentrate the copper and nickel in the plating wastewater.