• Conservation Science in Museum
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• v.17
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• pp.1-16
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• 2016

The gold buckle excavated from Seogam-ri Tomb No. 9(National Treasure No. 189), one of the oldest gold artifacts discovered within the Korean Peninsula, was created using granulation techniques. The buckle is made with 22.8K gold sheets and features a decorative design with seven dragons in repousse metalwork. The outlines of the dragons and the edge of the buckle are finished with 23.8K gold wires and granules. Some curved sections of the buckle are also covered with an extra sheet of 23.8K gold, possibly added to repair defects discovered during production or thereafter. Gold wire used to render the dragon's nostrils is slightly lower in purity(23.3K) and was probably preferred in this case due to its increased hardness. As a result, the metal is better able to retain the complex shape of the dragons' nostrils, created by rolling gold wire into spirals. The buckle's gold granules are found in small, medium and large sizes and are presumed to have been bonded using copper. The foreheads and the bodies of the seven dragons are inset with turquoise and the eyes are decorated with red cinnabar/vermillion(HgS).

• Journal of the Korean earth science society
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• v.27 no.2
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• pp.177-187
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• 2006

Due to a lack of reproducibility and visibility of the conventional equipment for westerly wave simulation, it is difficult to have indoor experiments at high school that show the stream of Hadley cell. A modified improvement of the old one improves the problem. The side wall and bottom of the new equipment is made by copper and acrylic resin, respectively, in order to clarify the difference between the water temperature inside and outside of the water tank. The equipment also has a high quality digital record for generating exact analysis of the results. And we also carried out several experiments that relate theoretical and experimental aspection of westerly wave. Temperature Detected Sheet (TDS) in flow visualization unit provides not only visual information of liquid flow, but also clear understanding of the relation between upper and lower wind flow structure. And the liquid stream simulated in indoor experiment using proposed equipment is commensurate with westerly wave in real atmosphere. The efficiency of educational properties of the proposed equipment is verified indirectly by Likert Scales survey of high school teachers.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.10
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• pp.1463-1470
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• 2010

Microforming, which exploits the advantages of metal forming technology, appears very promising in manufacturing microparts since it enables the production of parts using various materials at a high production rate, it has high material utilization efficiency, and it facilitates the production of parts with excellent mechanical properties. However, the conventional macroscale forming process cannot be simply scaled down to the micro-scale process on the basis of the extensive results and know-how on the macroscale process. This is because a so-called "size effect" occurs as the part size decreases to the microscale. In this paper, we attempt to develop an effective analytical and experimental modeling technique for explaining the effects of the grain size and the specimen size on the behavior of metals in microscale deformation processes. Copper sheet specimens of different thicknesses were prepared and heat-treated to obtain various grain sizes for the experiments. Tensile tests were conducted to investigate the influence of specimen thickness and grain size on the flow stress of the material. In addition, an analytical model was developed on the basis of phenomenological experimental findings to quantify the effects of the grain size and the specimen size on the flow stress of the material in microscale and macroscale forming.

• Transactions of Materials Processing
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• v.23 no.8
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• pp.489-494
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• 2014

Micro forming is an appropriate process to manufacture very small metal parts which can be employed in the field of electronic devices or electrically controlled mechanical systems. The purpose of the current study was to investigate the influences of both blankholding force and blank diameter for the deep drawing of very small cups. It is essential to control the blankholding force because improper force can result in defects such as wrinkles in the flange or cracks in the corner of the drawn cups. In the current study blankholding force was controlled by springs connected to the blankholder of a press die. Exchangeable bushing dies with various die-corner radii were also used. To obtain the limit drawing ratio for each working condition several sizes of circular specimens were prepared using blanking tools. Beryllium copper(C1720) alloy sheet of $50{\mu}m$ thickness was chosen for the experiments. The maximum limit drawing ratio of 2.1 was achieved experimentally for the conditions of the blankholder force(BHF)=5.3kgf and Rd=0.3mm. Both thickness and hardness along the central section of drawn cups were measured and compared for different drawing conditions. It was found that the deviation of measured data in the thickness and hardness distribution increases with increasing blankholder force and blank diameter.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.453-457
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• 2020

Tomb No. 1 (Donghachong) of the Buyeo Neungsan-ri Tomb complex (listed as UNESCO World Heritage Site), is a royal tomb of the Baekje Sabi Period. One wooden coffin unearthed there is an important relic of the funerary culture of the Baekje. This study examines the production techniques of gilt-bronze objects attached to the wooden coffin excavated from Donghachong. The base metal of the gilt-bronze object is pure copper, with single α phase crystals in a heterogeneous form containing annealing twins; Au and Hg are detected in the gilt layer. We suggest that the surface of the forging copperplate is gilded using a mercury amalgam technique; it is thought that the annealing twins of the base material formed during the heat treatment process for the sheet metal. The gilt layer is three to five times thicker for the gilt-bronze objects found near the foot of the coffin than those near the head. We estimate the plating process is carried out at least three times because three layers are identified on the plate near the head. Therefore, it is likely that the materials and methods used to construct the gilt-bronze objects found in different parts of the coffin are the same, but the number of platings is different. This research confirms the metal crafting techniques used in Baekje by the examination of production techniques of these gilt-bronze objects. Further, our paper presents an important example of restoration and reconstruction for a museum exhibition, through effective use of scientific analysis and investigation.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.3025-3029
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• 2014

To realize copper-based electrode materials for printed electronics applications, it is necessary to improve the adhesion strength between conductive lines and the substrate. Here, we report the preparation of Cu pastes using (3-glycidoxypropyl) trimethoxysilane (GPTMS) prepolymer as an adhesion promoter (AP). The Cu pastes were screen-printed on glass and polyimide (PI) substrates and sintered at high temperatures (> $250^{\circ}C$) under a formic acid/$N_2$ environment. According to the adhesion strengths and electrical conductivities of the sintered Cu films, the optimized Cu paste was composed of 1.0 wt % GPTMS prepolymer, 83.6 wt % Cu powder and 15.4 wt % vehicle. After sintering at $400^{\circ}C$ on a glass substrate and $275^{\circ}C$ on a PI substrate, the Cu films showed the sheet resistances of $10.0m{\Omega}/sq$. and $5.2m{\Omega}/sq$., respectively. Furthermore, the sintered Cu films exhibit excellent adhesion properties according to the results of the ASTM-D3359 standard test.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.105-110
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• 2014

The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.