• 한국재료학회지
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• 제23권10호
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• pp.550-554
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• 2013

As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.192-193
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

• 한국염색가공학회:학술대회논문집
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• 한국염색가공학회 2004년도 추계학술발표회 논문집
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• pp.238-244
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• 2004

In this study we have examined Copper and Nickel double metal layer on the synthetic fabrics by electroless chemical plating. We have focused on the shielding effect of the four kinds of woven and none-woven structure against electromagnetic fields. The shielding effectiveness of Copper and Nickel double metal layer showed between 90dB and 70dB, which are closely related to the fabric structure, that is cover factor and density. The more dense, The better shielding effect.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.127-128
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• 2014

현재 기술 산업에서 PET위 무전해 도금을 실행하기 위해 다양한 전처리 공정과 Catalyst가 소개되고 있다. 그 중에서 가장 일반적으로 사용되고 있는 Catalyst는 Palladium으로서 Tin과 산화 환원 반응으로 Electroless Copper Deposition 단계에서 구리 도금의 Target으로 작용하고 있다. 하지만 상대적으로 Palladium은 생산 비용이 높으며 Tin은 쉽게 산화되는 문제점이 남아 있다. 이를 대체하기 위한 대안 공정으로서 Palladium 대신 Silver를 이용하여 Catalyst로서의 역할을 하는 공정이다. 이전에 PET위 전처리 공정으로 Ultra Violet을 사용하여 표면을 개질 시키는 방법을 연구했으며, 그 후 Potassium Permanganate와 Silver Catalyst의 Mechanism을 연구 했다. PET 표면 개질을 거치면서 화학 구조가 바뀌어 표면에 Carbon Carbon Double Bond를 형성한다. 이때 Permanganate ion이 새로이 형성된 이중 결합과 반응하여 두 개의 extra-OH functional group을 생성함과 동시에 $MnO_2$를 만들어 표면에 흡착 시킨다. $MnO_2$는 전위차에 의해 Silver Ion과 Redox Reaction을 일으키며 실질적인 Catalyst 역할을 하게 된다. Silver Catalyst는 무전해 구리 도금 용액 안에서 Copper의 Target으로 작용한다.

• 대한안전경영과학회지
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• 제11권1호
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• pp.121-130
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• 2009

This paper considers a six sigma project for reducing the cost copper of the cable materials in a electric wire company. The project follows a disciplined process of five macro phases: define, measure, analyze, improve, and control (DMAIC). A process map is used to identify process input variables. Three key process input variables are selected by using an input variables are selected by using an input variable evaluation table: large cable, plating, and a twisted pair. DOE is utilized for finding the optimal process conditions of the three key process input variables. The implementing result of this six sigma project is enable for reducing of the 2.8% copper materials.

• Journal of Electrochemical Science and Technology
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• 제11권1호
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• pp.60-67
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• 2020

In this study, copper (II) oxide powder for electroplating was prepared by recovering CuCl₂ from NaClO₃ type etching wastes via recovered non-sintering two step chemical reaction. In case of alkali copper carbonate [mCuCo₃·nCu(OH)₂], first reaction product, CuCo₃ is produced more than Cu(OH)₂ when the reaction molar ratio of sodium carbonate is low, since m is larger than n. As the reaction molar ratio of sodium carbonate increased, m is larger than n and Cu(OH)₂ was produced more than CuCO₃. In the case of m has same values as n, the optimum reaction mole ratio was 1.44 at the reaction temperature of 80℃ based on the theoretical copper content of 57.5 wt. %. The optimum amount of sodium hydroxide was 120 g at 80℃ for production of copper (II) oxide prepared by using basic copper carbonate product of first reaction. At this time, the yield of copper (II) oxide was 96.6 wt.%. Also, the chloride ion concentration was 9.7 mg/L. The properties of produced copper (II) oxide such as mean particle size, dissolution time for sulfuric acid, and repose angle were 19.5 mm, 64 second, and 34.8°, respectively. As a result of the hole filling test, it was found that the copper oxide (II) prepared with 120 g of sodium hydroxide, the optimum amount of basic hydroxide for copper carbonate, has a hole filling of 11.0 mm, which satisfies the general hole filling management range of 15 mm or less.

• 한국주조공학회지
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• 제25권6호
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• pp.259-264
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• 2005

The copper clad steel wire is used extensively as lead wires of electronic components such as capacitors, diodes and glass sealing lamp because the wire combines the strength and low thermal expansion characteristic of Fe-Ni steel with the conductivity and corrosion resistance of copper. In order to fabricate the copper clad steel wire, several processes including electro-plating, tubecladding extrusion process and dip forming process have been introduced and applied. The electroplating process for the production of copper clad steel wire shows poor productivity and induces environmental load generation such as electroplating solution. The dip forming process is suitable to mass production of copper clad steel such as trolley wire. and need expensive manufacturing facilities. The present paper describes the improvement of the conventional continuous casting process to fabricate copper clad steel wire, which its core metal is low thermal expansion Fe-Ni alloy and its sheath material is copper. In particular, the formation of intermetallic compound at interface between core and sheath was investigated in order to introduce optimum continuous casting process parameter for fabrication of copper clad steel wire with higher electrical conductivity. The mechanical strength of copper clad steel wire was also investigated through wiredrawing process with of 95% in total reduction ratio.

• 한국표면공학회지
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• 제43권6호
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• pp.289-296
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• 2010

The effect of organic additives, thiourea (TU), on the copper electroplated layer of large rectangular size was investigated through physical and various electrochemical techniques. It was found that TU had strong adsorption characteristics on the Ni substrate and affected the initial electroplating process by inducing surface reaction instead of mass transfer in the bulk solution. TU additives had its critical micelle concentration at 200 ppm in copper sulphate solution and showed abrupt change in morphological and electrochemical impedance spectroscopic results around this concentration, which could be related with the destruction of adsorption structure of TU-Cu(I) complex formed at the Ni substrate surface. By conducting a commercial electroplating simulation, when TU additives was included at cmc in the plating solution, it acted as a depolarizer for copper electrodeposition and was effective to reduce the unevenness of copper deposits between centre and edge region at high current densities of 10 ASD.

• 한국표면공학회지
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• 제48권1호
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• pp.1-6
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• 2015

Amino-carboxyl acid as a complexing agent in acid copper sulfate solution was utilized to improve the adhesion of immersion copper layer for steel wire. According to the tape test results, regardless of alloy composition of the wire, the adhesion of immersion copper layer was improved with the addition of amino-carboxyl acid. The incorporation of H and Fe in the plating layer was analyzed by TOF-SIMS. The H and Fe were detected at the entire coating layer without any addition of amino-carboxyl acid. However, with addition of amino-carboxyl acid, the H and Fe were scarcely detected at the coating layer.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.