• Title/Summary/Keyword: Copper (Cu)

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Fabrication of $Bi_{2}Sr_{2}CaCu_{2}O_{8}$ Superconducting Films by the LiReac-PreCu Method (급속반응공정에 의한 동 테이프 $Bi_{2}Sr_{2}CaCu_{2}O_{8}$)

  • 성현태;한상철;한영희;이준성;최희락
    • Progress in Superconductivity and Cryogenics
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    • v.1 no.1
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    • pp.7-14
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    • 1999
  • Wekk oriented $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ suppercondcting thick films were fabricared on copper tape by LiReac-PreCu (liquid reaction between a Cu-free precousor and Cu tape) method. Cu-free precursor power which is composed of $Bi_{2}Sr_{2}Ca_{5}$ was printed on a copper tape by screen printing and was heat-treated. The speciment were partially in a molten state at the heat treatment temperature (85$0^{\circ}C$~87$0^{\circ}C$). The heat heat treatments for the reaction were performed in air or low oxygen pressure in several stages. XRD analyses of the resulting Bi2Sr2CaCu2O8 superconducting tapes show that the $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ phase is dominant and a small amount of $Bi_{2} Sr_{2} Cu_{2} O_{6}$ phase is detected. Both phases are aligned in the c-axis direction.

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Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.4
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    • pp.174-177
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    • 2007
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

Formation and Preservative Effectiveness of Water-Insoluble Copper Compound in Wood Treated with Copper Sulfate and Sodium Carbonate (황산구리와 탄산나트륨 처리 목재 내의 물불용성 구리화합물의 생성과 방부효력)

  • Kim, Jin-Kyung;Lee, Jong-Shin
    • Journal of the Korea Furniture Society
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    • v.19 no.5
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    • pp.358-364
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    • 2008
  • Wood-inorganic material composite (WIC) was prepared by impregnating wood with copper sulfate ($CuSO_4\;5H_2O$) solution and by immersed wood in sodium carbonate($Na_2CO_3$) solution in order to introduce insoluble copper compounds {copper carbonate hydroxide, $CuCO_3\;Cu(OH)_2$} into the wood to give fungicidal effects in treated-wood. The weight percent gains (WPGs) of treated wood reached maximum value by impregnation of 20% copper sulfate solution and immersion in about 15% sodium carbonate solution for 24 hrs. Inorganic substances were present mainly in the lumina and cross-field pitting of tracheides. These substances were proved to be the insoluble copper carbonate hydroxide against water by the energy dispersive X-ray analyzer in conjunction with a scanning electron microscope (SEM-EDXA). The treated specimens showed high preservative effectiveness because the weight losses were hardly occurred by the fungi degradation test.

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Remediation of Copper-Contaminated Soil using Low Molecular Weight Organic Acid Flushing Technique (저분자량 유기산 세척을 이용한 오염토양으로부터의 Cu제거에 관한 연구)

  • 이기철;강순기;공성호
    • Journal of the Korean Society of Groundwater Environment
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    • v.5 no.1
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    • pp.30-36
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    • 1998
  • For successful soil flushing process selection of appropriate flushing reagents is essential. Futhermore, obtaining operating parameters for site remediation application through various bench-scale tests is also important. In this research a series of organic acids (acetic, citric, oxalic, and succinic acids) were tested for flushing capability. Copper-contaminated natural soil was used as a test medium, and flushing experiments were performed with batch system. All the organic acids used did not provide effective flushing conditions at concentration of 1 mM. At the acid concentration of 50 and 100 mM copper was removed efficiently although 50 and 100 mM did not show any significant differences in removal efficiencies. Citric acid and oxalic acid removed copper more efficiently than the others, and especially, citric acid showed over 87% of removal efficiency of copper at near neutral pH of 5 to 7. Speciation of extracted copper using GEOCHEM simulation showed majority of extracted copper existed as complexed with organic acids and only small portion of organic acids were complexed with copper indicating promising application of soil flushing with organic acid to heavy metal-contaminated site remediation.

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Growth of Copper Oxide Thin Films Deposited by Ultrasonic-Assisted Spray Pyrolysis Deposition Method (초음파 분무 열분해법을 이용한 구리산화물 박막 성장)

  • Han, In Sub;Park, Il-Kyu
    • Korean Journal of Materials Research
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    • v.28 no.9
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    • pp.516-521
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    • 2018
  • Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

Formation of Copper Electroplated Electrode Patterning Using Screen Printing for Silicon Solar Cell Transparent Electrode (실리콘 태양전지 투명전극용 스크린 프린팅을 이용한 구리 도금 전극 패터닝 형성)

  • Kim, Gyeong Min;Cho, Young Joon;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.4
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    • pp.228-232
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    • 2019
  • Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of $Cu_2SO_4$ and $H_2SO_4$ at a current density of $10mA/cm^2$. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about $80{\mu}m$. The contact resistance of the copper electrode is $0.89m{\Omega}{\cdot}cm^2$, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are $1{\Omega}/{\square}$ and $40{\Omega}/{\square}$, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.

Conductivity of copper(II)-phthalocyanine thin films due to a grain growth (결정 성장 조건에 따른 copper(II)-phthalocyanine 박막의 전기전도도 특성)

  • Park, Mie-Hwa;Yoo, Hyun-Jun;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.132-136
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    • 2004
  • 열 증착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 열처리 조건은 $150^{\circ}C$에서 후열(annealing) 처리 하는 방식과 예열하는 두 가지 방식으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로웨이브 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 에너지 밴드갭의 shift 현상과 관련지어 설명하고 또한 x-ray diffraction(XRD) data를 통해 박막의 결정 특성과 비교하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 조건에 따른 CuPc 박막의 전기전도도 특성은 후열 처리한 박막의 경우 예열 처리한 박막보다 전기 전도 특성이 향상되었음을 관측할 수 있었다.

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Cold Roll Bonding of (Ag-10% Ni)/Cu Clad Metals ((Ag-10 % Ni)/Cu 접점재의 냉간압연접합)

  • 김종헌;김성일;박상용
    • Transactions of Materials Processing
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    • v.6 no.2
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    • pp.136-144
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    • 1997
  • (Ag-10%Ni)/Cu clad metals for electric contact switch were fabricated by cold-roll bonding process. 2 or 3 passes of cold-rolling was carried out for each process to investigate the effect of the rolling passes on the bonding property. The effect of the annealing temperature of copper before the cold-roll bonding on the bond strength was also studied. The specimen bonded with copper annealed below 30$0^{\circ}C$ before roll bonding showed good bond strength. This is because high stored energy in copper promoted the short range diffusion and the grain refinement of copper by the static recrystallization increased the degree of the interfacial coherency. The maximum peel strength of clad metals bonded with Cu annealed below 30$0^{\circ}C$ was 120N.

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A study on the resistance of saccharomyces cerevisiae to copper sulfate (유산동에 대한 Saccharomyce cerevisiae의 저항성에 관한 연구)

  • 이민재;이진기
    • YAKHAK HOEJI
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    • v.3 no.1
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    • pp.15-20
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    • 1957
  • Resume 1. The toxic effect of $CuSO_4$ on the growth of yeast began in the 0.2mM and colony formation was completely inhibited in the 3mM $CuSO_4$ media. 2. The yeast strain which was trained sucessively from lower concentration media to higher one, could grow even in 10mM $CuSO_4$ media. 3. Rlb strain produced brown pigment in copper media. 4. Resistance of Rlb strain to $CuSO_4$ did not revert in non copper media. 5. The appearance of resistant strain was regarded as the result of "Mutation and Selection". 6. The alcohol fermentation ability of Rlb strain was lower than that of parent strain. 7. Rlb strain yielded some effective substance which induced the parent strain to resist against $CuSO_4$. 8. The dehydrogenase activity of yeast was inhibited by $CuSO_4$.

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