• Title/Summary/Keyword: Copper/low k

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Copper and Zinc Uptake Capacity of a Sorghum-Sudangrass Hybrid Selected for in situ Phytoremediation of Soils Polluted by Heavy Metals (식물정화를 위한 중금속 내성 작물의 선발과 수수-수단그라스 교잡종의 구리와 아연 흡수능력)

  • Oh, Soon-Ja;Koh, Seok-Chan
    • Journal of Environmental Science International
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    • v.24 no.11
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    • pp.1501-1511
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    • 2015
  • As essential trace elements, copper and zinc play important roles in many physiological events in plants. In excess, however, these elements can limit plant growth. This study selected a heavy metal-tolerant plant by analyzing seed germination and biomass of alfalfa (Medicago sativa), canola (Brassica campestris subsp. napus var. nippo-oleifera), Chinese corn (Setaria italica), and a sorghum-sudangrass hybrid (Sorghum bicolor ${\times}$ S. sudanense), and determined heavy metal uptake capacity by analyzing biomass, chlorophyll a fluorescence, and heavy metal contents under high external copper or zinc levels. The seed germination rate and biomass of the sorghum-sudangrass hybrid were higher under copper or zinc stress compared to the other three plants. The plant biomass and photosynthetic pigment contents of the sorghum-sudangrass hybrid seedlings were less vulnerable under low levels of heavy metals (${\leq}50ppm$ copper or ${\leq}400ppm$ zinc). The maximum quantum yield of PSII ($F_v/F_m$) and the maximum primary yield of PSII ($F_v/F_o$) decreased with increasing copper or zinc levels. Under high copper levels, the decline in $F_v/F_m$ was caused only by the decline in $F_m$, and was accompanied by an increase in non-photochemical quenching (NPQ). The $F_v/F_m$ declined under high levels of zinc due to both a decrease in the maximum fluorescence ($F_m$) and an increase in the initial fluorescence ($F_o$), and this was accompanied by a marked decrease in photochemical quenching (qP), but not by an increase in NPQ. Accumulations of copper and zinc were found in both aboveand below-ground parts of plants, but were greater in the below-ground parts. The uptake capacity of the sorghum-sudangrass hybrid for copper and zinc reached 4459.1 mg/kg under 400 ppm copper and 9028.5 mg/kg under 1600 ppm zinc. Our results indicate that the sorghum-sudangrass hybrid contributes to the in situ phytoremediation of copper or zinc polluted soils due to its high biomass yield.

The Properties of $Bi_2Mg_{2/3}Nb_{4/3}O_7$ Thin Films Deposited on Copper Clad Laminates For Embedded Capacitor (임베디드 커패시터의 응용을 위해 CCL 기판 위에 평가된 BMN 박막의 특성)

  • Kim, Hae-Won;Ahn, Jun-Ku;Ahn, Kyeong-Chan;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.45-45
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    • 2007
  • Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

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A Study on the Characteristics of Verdigris Manufactured by Acid Corrosion Method (산부식법으로 제조한 동록안료의 특성에 관한 연구)

  • Kang, Yeong Seok;Mun, Seong Woo;Lee, Sun Myung;Jeong, Hye Young
    • Journal of Conservation Science
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    • v.36 no.3
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    • pp.178-186
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    • 2020
  • Verdigris is a traditional artificial pigment reported on old research papers and according to the methods mentioned in the literature, it is manufactured by the corrosion of copper or copper alloys using vinegar and by further scraping the generated rust. Since the Three Kingdoms Period, various household products with copper alloys, such as bronze and brass, have been used, and pigment analysis of these cultural heritage items has revealed the presence of tin, zinc, lead, and copper in green pigments. Based on these data, five types of verdigris were prepared from copper and copper alloys, and analyzed. the analysis results revealed a bluish green pigmentation, and the chromaticity, particle shape, and oil absorption quantity of each verdigris differed based on the type of copper alloy used in its preparation. The main components of verdigris are Cu, Sn, Zn and Pb, and their proportions depended on the type of copper alloy used during manufacturing. However, the main constituent mineral of the pigments is the same as 'hoganite[Cu(CH3COO)2·H2O]', regardless of the copper alloy used. The result of accelerated weathering test for stability evaluation revealed that verdigris was discolored rapidly, thereby indicating that its stability was low, in particular, the pigments comprising lead presented relatively lower stability.

Calculating the Threshold Energy of the Pulsed Laser Sintering of Silver and Copper Nanoparticles

  • Lee, Changmin;Hahn, Jae W.
    • Journal of the Optical Society of Korea
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    • v.20 no.5
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    • pp.601-606
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    • 2016
  • In this study, in order to analyze the low-temperature sintering process of silver and copper nanoparticles, we calculate their melting temperatures and surface melting temperatures with respect to particle size. For this calculation, we introduce the concept of mean-squared displacement of the atom proposed by Shi (1994). Using a parameter defined by the vibrational component of melting entropy, we readily obtained the surface and bulk melting temperatures of copper and silver nanoparticles. We also calculated the absorption cross-section of nanoparticles for variation in the wavelength of light. By using the calculated absorption cross-section of the nanoparticles at the melting temperature, we obtained the laser threshold energy for the sintering process with respect to particle size and wavelength of laser. We found that the absorption cross-section of silver nanoparticles has a resonant peak at a wavelength of close to 350 nm, yielding the lowest threshold energy. We calculated the intensity distribution around the nanoparticles using the finite-difference time-domain method and confirmed the resonant excitation of silver nanoparticles near the wavelength of the resonant peak.

Micro-structure and NTCR Characteristics of Copper Manganite Thin Films Fabricated by MOD Process (MOD법으로 제조된 Copper Manganite 박막의 구조 및 NTCR 특성)

  • Lee, Kui Woong;Jeon, Chang Jun;Jeong, Young Hun;Yun, Ji Sun;Nam, Joong Hee;Cho, Jeong Ho;Paik, Jong Hoo;Yoon, Jong-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.452-457
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    • 2014
  • Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

A STUDY ON THE FRACTURE OF DENTAL AMALGAM (치과용 아말감의 파절에 관한 연구)

  • Huh, Hyeon-Do;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.9 no.1
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    • pp.101-106
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    • 1983
  • It was the purpose of this study to investigate the fracture mode of dental amalgam by observing the crack propagation, and to relate this to the microstructure of the amalgam. Caulk 20th Century Regular, Caulk Spherical, Dispersalloy, and Tytin amalgam alloys were used for this study. After each amalgam alloy and Hg measured exactly by the balance was triturated by the mechanical amalgamator (Capmaster, S.S. White), the triturated mass was inserted into the cylindrical metal mold which was 4 mm in diameter and 12 mm in height and was pressed by the Instron Universal Testing Machine at the speed of 1mm/min with 120Kg. The specimen removed from the mold was stored in the room temperature for a week. This specimen was polished with the emery papers from #100 to #200 and finally on the polishing cloth with 0.06${\mu}Al_2O_3$ powder suspended in water. The specimen was placed on the Instron testing machine in the method similar to the diametral tensile test and loaded at the crosshead speed of 0.05mm/min. The load was stopped short of fracture. The cracks on the polished surface of specimen was examined with scanning electron microscope (JSM-35) and analyzed by EPMA (Electron probe microanalyzer). The following results were obtained. 1. In low copper lathe-cut amalgam, the crack went through the voids and ${\gamma}_2$ phase, through the ${\gamma}_1$ phase around the ${\gamma}$ particles. 2. In low copper spherical amalgam, it was observed that the crack passed through the ${\gamma}_2$ and ${\gamma}_1$ phase, and through the boundary between the ${\gamma}_1$ and ${\gamma}$ phase. 3. In high copper dispersant (Dispersalloy) amalgam, the crack was found to propagate at the interface between the ${\gamma}_1$ matrix and reaction ring around the dispersant (Ag-Cu) particles, and to pass through the Ag-Sn particles. 4. In high copper single composition (Tytin) amalgam, the crack went through the ${\gamma}_1$ matrix between ${\eta}$ crystals, and through the unreacted alloy particle (core).

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AN ELECTROCHEMICAL STUDY ON SURFACE FINISH OF DENTAL AMALGAM (아말감의 표면연마에 관한 전기화학적 연구)

  • Suk, Chang-In;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.16 no.2
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    • pp.18-32
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    • 1991
  • The purpose of this study was to observe characteristic properties of amalgam through the polarization curves and SEM images from 4 type amalgams (Amalcap, Shofu spherical. Dispersalloy and Tytin) with 3 different surface finish procedures (polishing, burnishing and carving) by using the potentiostats (EG & GPARC) and SEM (Jeol JSM-35). After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of mechanical amalgamator (Samki), the triturated mass was inserted into the cylndrical metal mold which was 12 mm in diameter and 10 mm in height and was pressed with $100kg/cm^2$. 4 specimens of each type amalgam were burnished with egg burnisher and another 4 specimens of each type amalgam were carved with Hollenback carver. Above 8 specimens and remaining untreated 4 specimens were stored at room temperature for about 7 days. Untreated 4 specimens of each type amalgam were polished with abrasive papers (Deer) from #400 to #1200 and finally on the polishing cloth with $0.5{\mu}m$ and $0.06{\mu}m$ $Al_2O_3 $ powder suspended water. Anodic polarization measurements was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution at $37^{\circ}C$. The open circuit potential was determined after 30 minutes immersion of specimen in electrolyte. The scan rate was 1 mV/sec and the surface area of amalgam exposed to the solution was $0.64cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). SEM images of each specimen were taken after + 800 mV (SCE) polarization. The results were as follows: 1. The corrosion potential of high copper amalgam was more anodic than that of low copper amalgam. 2. The polished amalgam were more resistant to corrosion than any other burnished and carved amalgam. 3. In the case of polishing, current density of high copper amalgam was lower than that of low copper amalgam.

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A STUDY ON THE REDUCTION OF GALVANIC CURRENT BETWEEN AMALGAM AND GOLD ALLOY WITH VARIOUS CHEMICAL AGENTS (수종 아말감과 금합금의 갈바닉 전류 측정에 관한 연구)

  • Kim, Seung-Soo;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.18 no.2
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    • pp.469-481
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    • 1993
  • The purpose of this study was to achieve the reduction of the galvanic current between the dental amalgam alloy and gold alloy. In order to measure the galvanic current between these two metals a prep in the size of $4{\times}13mm$ which was filled with amalgam and another prep of $4{\times}2mm$ was filled with gold alloy was made in the acrylic resin. These two preps were then connected to a 2mm diameter copper wire. Using an ammeter to measure the galvanic current, six different kinds of amalgam and gold alloy were immersed in saline solution with approximately 10mm distance between the two alloys. Chemical agents that are thought to reduce the galvanic current such as hydrazine. silver nitrate, potassium chromate, and bonding agents such as Scotch bond 2(3M) and All bond 2(Bisco) were applied to the alloy surface. Cathodic inhibitor such as hydrazine was applied to gold alloy where as anodic inhibitor such as silver nitrate and potassium chromate were applied to amalgam. Both bonding agents, Scotch bond 2(3M) and All bond 2 (Bisco), were applied to amalgam. The following results were obtained when the currency on the coated alloy surface was compared to the uncoated surface. 1. The galvanic currency went down as the time elapsed and after 30 minutes no change was detected. 2. Initial currency was higher in low copper amalgam compared to high copper amalgam. Intitial currency was the highest in low copper lathe-cut amalgam. 3. Group of gold coated with hydrazine had the most reduction in galvanic currency. 4. Group of amalgam coated with silver nitrate or potassium chromate also showed significant reduction in galvanic currency. 5. The bonding agents also helped reduce galvanic currency. 6. Of all the agents used to reduce galvanic currency, silver nitrate showed the best result.

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The Characterization of V Based Self-Forming Barriers on Low-k Samples with or Without UV Curing Treatment

  • Park, Jae-Hyeong;Han, Dong-Seok;Gang, Yu-Jin;Sin, So-Ra;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.214.2-214.2
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    • 2013
  • Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

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