• 제목/요약/키워드: Convergence beam electron diffraction

검색결과 8건 처리시간 0.018초

수렴성 빔 전자회절 도형을 이용한 Al-Ti 합금의 상 분석 (Phase Identification of Al-Ti Alloys Using Convergent Beam Electron Diffraction Pattern)

  • 김혜성
    • 한국산업융합학회 논문집
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    • 제4권2호
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    • pp.149-155
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    • 2001
  • The use of primitive cell volume and zero order Laue (ZOLZ) pattern is proposed to identify phase in a complex microstructure. Single convergent beam electron pattern containing higher order Laue zone ring from a nanosized region is sufficient to calculate the primitive cell volume of the phase, while ZOLZ pattern is used to determine the zone axis of the crystal. A computer program is used to screen out possible phases from the value of measured cell volume from convergent beam electron diffraction (CBED) pattern. Indexing of ZOLZ pattern follows in the program to find the zone axis of the identification from a single CBED pattern. An example of the analysis is given from the rapidly solidified $Al-Al_3Ti$ system.

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Sensitivity of quantitative symmetry measurement algorithms for convergent beam electron diffraction technique

  • Hyeongsub So;Ro Woon Lee;Sung Taek Hong;Kyou-Hyun Kim
    • Applied Microscopy
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    • 제51권
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    • pp.10.1-10.9
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    • 2021
  • We investigate the sensitivity of symmetry quantification algorithms based on the profile R-factor (Rp) and the normalized cross-correlation (NCC) coefficient (γ). A DM (Digital Micrograph©) script embedded in the Gatan digital microscopy software is used to develop the symmetry quantification program. Using the Bloch method, a variety of CBED patterns are simulated and used to investigate the sensitivity of symmetry quantification algorithms. The quantification results show that two symmetry quantification coefficients are significantly sensitive to structural changes even for small strain values of < 1%.

질소분위기 전자빔 조사에 의한 졸-겔 IGZO 박막 트랜지스터의 전기적 특성 향상 (Enhancing Electrical Properties of Sol-Gel Processed IGZO Thin-Film Transistors through Nitrogen Atmosphere Electron Beam Irradiation)

  • 박지호;송영석;배수강;김태욱
    • 마이크로전자및패키징학회지
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    • 제30권3호
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    • pp.56-63
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    • 2023
  • 본 연구에서는 졸-겔 IGZO(Indium-Gallium-Zinc Oxide) 박막을 만들고 이에 전자빔을 조사 한 후 박막 트랜지스터로 제작하여 전자빔 조사가 박막 트랜지스터의 전기적 특성에 미치는 영향을 비교 분석하였다. 특히 전자빔이 조사되는 환경을 대기 중과 질소 분위기(<200 ppm O2)로 두고 전자빔 조사 선량 세기를 100kGy와 200kGy로 각각 조사한 후 350℃ 온도에서의 열처리만 진행한 비교군과 비교 분석을 진행하였다. 전자빔 조사에 따른 졸-겔 IGZO 박막의 물성 변화를 분석하기 위해 UV-Visible spectroscopy, X-ray diffraction(XRD)와 X-ray photoelectron spectroscopy(XPS)를 분석 결과, 전자빔 조사 전·후의 모든 조건 하에서 가시광 영역에서의 80% 이상의 높은 투과도를 보여줌을 확인할 수 있었고, XRD 분석 결과를 통해 전자빔 조사와 관계없이 비정질 특성을 유지함을 확인하였다. 특히 전자빔 조사에 따라 졸-겔 IGZO 박막에 화학적 조성 변화가 있음을 확인하였는데, 질소 분위기에서 전자빔을 조사하게 되면 M-O결합과 관련된 peak이 차지하는 비율이 높아짐을 확인할 수 있었다. 질소 분위기에서 전자빔이 조사된 TFT들은 on/off 비율, 전자 이동도에서 향상된 특성을 보여주었으며, 시간에 따라 트랜지스터의 특성들(on/off 비율, 문턱전압, 전자이동도, 하위임계값 스윙)의 수치 또한 큰 변화 없이 유지됨이 확인되어, 졸-겔 공정 TFT 제작에 있어서 질소 분위기에서의 전자빔 조사공정이 IGZO기반 박막 트랜지스터의 전기적특성의 개선에 기여할 수 있을 것으로 기대된다.

H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation

  • Sohn, Jae-Cheon;Kim, Sung-Eun;Kim, Zee-Won;Yu, Yun-Sik
    • Transactions on Electrical and Electronic Materials
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    • 제10권4호
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    • pp.135-139
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    • 2009
  • $H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

펨토초 레이저에 의한 티타늄 합금과 티타늄질화알루미늄 소결체의 어블레이션특성 비교연구 (Comparative Study on Ablation Characteristics of Ti-6Al-4V Alloy and Ti2AlN Bulks Irradiated by Femto-second Laser)

  • 황기하;오화봉;최원석;조성학;강명창
    • 한국기계가공학회지
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    • 제18권7호
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    • pp.97-103
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    • 2019
  • Mn+1AXn (MAX) phases are a family of nano-laminated compounds that possess unique combination of typical ceramic properties and typical metallic properties. As a member of MAX-phase, $Ti_2AlN$ bulk materials are attractive for some high temperature applications. In this study, $Ti_2AlN$ bulk with high density were synthesized by spark plasma sintering method. X-ray diffraction, micro-hardness, electrical and thermal conductivity were measured to compare the effect of material properties both $Ti_2AlN$ bulk samples and a conventional Ti-6Al-4V alloy. A femto-second laser conditions were conducted at a repetition rate of 6 kHz and laser intensity of 50 %, 70% and 90 %, respectively, laser confocal microscope were used to evaluate the width and depth of ablation. Consequently, the laser ablation result of the $Ti_2AlN$ sample than that of the Ti-6Al-4V alloys show a considerably good ablation characteristics due to its higher thermal conductivity regardless of to high densification and high hardness.

Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

  • Woo, Hyeonseok;Kim, Jongmin;Cho, Sangeun;Jo, Yongcheol;Roh, Cheong Hyun;Kim, Hyungsang;Hahn, Cheol-Koo;Im, Hyunsik
    • Applied Science and Convergence Technology
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    • 제26권3호
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    • pp.52-54
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    • 2017
  • An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

Effect of Shape Magnetic Anisotropy of Amorphous Fe-B-P Nanoparticles on Permeability

  • Lee, Ji Eun;Tsedenbal, Bulgan;Koo, Bon Heun;Huh, Seok Hwan
    • 한국재료학회지
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    • 제30권11호
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    • pp.589-594
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    • 2020
  • Many electronic applications require magnetic materials with high permeability and frequency properties. We improve the magnetic permeability of soft magnetic powder by controlling the shape magnetic anisotropy of the powders and through the preparation of amorphous nanoparticles. For this purpose, the effect of the shape magnetic anisotropy of amorphous Fe-B-P nanoparticles is observed through a magnetic field and the frequency characteristics and permeability of these amorphous nanoparticles are observed. These characteristics are investigated by analyzing the composition of particles, crystal structure, microstructure, magnetic properties, and permeability of particles. The composition, crystal structure, and microstructure of the particles are analyzed using inductively coupled plasma optical emission spectrometry-, X-ray diffraction, scanning electron microscopy and focused ion beam analysis. The saturation magnetization and permeability are measured using a vibrating sample magnetometer and an LCR meter, respectively. It is confirmed that the shape magnetic anisotropy of the particles influences the permeability. Finally, the permeability and frequency characteristics of the amorphous Fe-B-P nanoparticles are improved.

Structural and Optical Properties of GaN Nanowires Formed on Si(111)

  • Han, Sangmoon;Choi, Ilgyu;Song, Jihoon;Lee, Cheul-Ro;Cho, Il-Wook;Ryu, Mee-Yi;Kim, Jin Soo
    • Applied Science and Convergence Technology
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    • 제27권5호
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    • pp.95-99
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    • 2018
  • We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.