• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.12-18
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• 2020

In semiconductor manufacturing, defect detection is critical to maintain high yield. Currently, computer vision systems used in semiconductor photo lithography still have adopt to digital image processing algorithm, which often occur inspection faults due to sensitivity to external environment. Thus, we intend to handle this problem by means of using Mask R-CNN instead of digital image processing algorithm. Additionally, Mask R-CNN can be trained with image dataset pre-processed by means of the specific designed digital image filter to extract the enhanced feature map of Convolutional Neural Network (CNN). Our approach converged advantage of digital image processing and instance segmentation with deep learning yields more efficient semiconductor photo lithography inspection system than conventional system.

• 한국광학회지
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• 제20권6호
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• pp.334-338
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• 2009

최근 디스플레이 기기의 수요가 증대되면서 대면적 노광에 대한 요구가 증대되고 있는데, 내부전반사(total internal reflection: TIR)홀로그래픽 리소그라피는 대면적 노광을 위한 효과적인 방법으로 연구가 진행되고 있다. TIR 홀로그래피에서는 일반적으로 레이저를 이용하여 영상을 기록하고 재생한다. 그러나 자외선 램프와 같은 비가간섭광을 이용하여 재생한다면, 가간섭성에 의해 나타나는 영상잡음을 줄일 수 있고, 대면적 노광에도 보다 용이할 것이다. TIR 홀로그램의 재생을 위하여 자외선 램프를 이용할 때, 램프의 유한한 선폭과 확산각이 재생 영상에 미치는 영향을 분석하고, 재생패턴에 나타나는 선폭 확대 결과를 실험을 통하여 검증하였다. ${\mu}m$ 규모의 선폭을 갖는 대면적 패턴을 TIR 홀로그램으로부터 얻기 위한 재생 광원으로, 가간섭성 광원인 레이저 대신 저잡음성과 경제성을 갖춘 일반적인 자외선 램프의 사용이 가능할 것으로 기대된다.

• Design & Manufacturing
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• 제12권1호
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.540-540
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• 2012

Selective detection of single nucleotide polymorphism (SNP) of Cytochrome P450 2C19 (CYP2C19) was carried out by the PNA chips which were electrically-interfaced with interdigitated nanogap electrodes (INEs). The INEs whose average gap distance and effective gap length were about ~70 nm and ${\sim}140{\mu}m$, respectively, were prepared by the combination of the photo lithography and the surface-catalyzed chemical deposition, without using the e-beam lithography which is almost inevitable in the conventional lab-scale fabrication of the INEs. Four different types of target DNAs were successfully detected and discriminated by the INE-based PNA chips.

• Journal of the Optical Society of Korea
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• 제13권2호
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• pp.294-298
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• 2009

In this paper we proposed a new Bragg grating waveguide in order to improve reflectivity and to achieve compactness. Bragg gratings with various thicknesses were engraved in the middle of the core layer with a length of 3 mm. For the sake of cost-effectiveness, the $3^{rd}$ order Bragg grating waveguides were fabricated via conventional photolithography. The maximum reflectivities for the fixed width waveguide of $6{\mu}m$ with the 0.1 and $0.3{\mu}m$-thick Bragg gratings were, -13.14 and -6.25 dB, respectively, and the Bragg wavelengths were 1562.28, 1564.10 nm, respectively. A slight increase in the Bragg grating thickness can result in a remarkable reduction in the length of the Bragg grating waveguide with a fixed reflectivity.

• 한국항공우주학회지
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• 제34권6호
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• pp.35-41
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• 2006

본 논문에서는 무밸브 마이크로펌프에 사용되는 압전 다이아프램의 성능을 향상시키는 방법이 연구되었다. 큰 작동 변위와 작동력을 가지는 원형 형태의 경량 압전 복합재료 작동기(LIPCA)를 마이크로 펌프용으로 제작하였다. 유한요소 해석과 실험을 통하여 원형 LIPCA의 성능을 예측하여 최적의 적층 형태를 설계하였다. 최적의 원형 LIPCA를 기반으로 포토리소그라피법과 PDMS 몰딩법을 사용하여 무밸브 마이크로 펌프를 제작하였다. 압전 다이아프램의 작동 변위 및 마이크로 펌프의 유량과 배압을 실험적으로 계측하였고, 반경험식을 사용하여 예측한 유량과 비교하였다. 이상의 연구에서 원형 LIPCA가 마이크로 펌프용으로 사용되는 보통의 압전 작동 다이아프램을 대체할 수 있는 우수한 작동기임을 확인할 수 있었다.

• 공업화학
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• 제24권6호
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• pp.593-598
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• 2013

본 연구에서는 ATR-FTIR (Attenuated Total Reflectance-Fourier Transfer Infrared)기법을 이용하여 PCB 회로형성에 사용하는 아크릴레이트 계열의 포토레지스트 드라이필름(Dry film)의 흡습 특성을 평가하였다. 또한 습도 변화에 따른 드라이필름의 파단면을 관찰하여 습도에 따라 고분자의 파단특성이 달라지는 것으로 확인하였으며, 정량적인 분석방법으로써 흡습에 따른 무게 변화 및 ATR-FTIR을 이용한 흡광도 변화를 통하여 확산계수를 계산하였다. 실험 결과 주변환경의 온도와 습도가 높아질수록 상온에서 취성과 연성의 중간 정도의 특성을 나타내던 드라이필름이 연성으로 전이되는 사실을 확인할 수 있었고, 온도와 습도가 낮을 경우엔 취성의 특성을 나타냄을 알 수 있었다. 이를 통해 PCB 회로형성 공정의 온 습도 환경 조건을 항상 일정하게 유지해야 일정한 품질을 유지할 수 있다는 사실을 알 수 있었다. 본 연구에서 사용된 흡습특성 평가법인 ATR-FTIR방법의 타당성을 확보하기 위해, 기존에 많이 사용하는 무게 변화법을 통한 고분자-물 확산계수와 ATR-FTIR을 이용한 값을 상호 비교하였다. ATR-FTIR을 이용한 방법은 무게변화법과 동일한 수준의 정확도를 가질 뿐만 아니라 흡습 및 탈습 과정에서 고분자 구조가 어떻게 변화하는지를 평가할 수 있어 가장 적합한 방법으로 판단된다.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.156-159
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• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.731-736
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• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.