• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.801-804
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• 2011

Electrical properties and microstructure were investigated on the effects of $MnO_2$ and the lead-free $(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.83}Sb_{0.07}Ta_{0.1})O_3$ ceramics with the addition of $MnO_2$ were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of $MnO_2$ addition. For the NKN-LST-xmol%$MnO_2$ sintered at $1100^{\circ}C$, bulk density increased with the addition of $MnO_2$ and showed maximum value at addition 1.0mol% of $MnO_2$. Curie temperature of the NKN-LST ceramics slightly decreased with adding $MnO_2$. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased below 0.25mol% of $MnO_2$ addition, which might be due to the increase in density. The high piezoelectric properties = 145 pC/N, electromechanical coupling factor = 0.421 and dielectric constant = 2883 were obtained for the NKN-LST-0.25mol%$MnO_2$ sintered at $1100^{\circ}C$ for 4h.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.85-87
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• 2002

The $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics were prepared by conventional mixed oxide method The structural properties of the $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics with the sintering temperature($1200^{\circ}C,\;1250^{\circ}C,\;1300^{\circ}C$) were investigated by XRD, SEM, EDS. Increasing the sintering temperature, the intensity of the $Ba_{0.5}Sr_{0.5}TiO_3$ (100), (110), (111), (200), (310) peaks and $SrBi_4Ti_4O_{15}$ (319), (040) peaks were increased. The gram of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ were fine and uniform. Increasing the sintering temperature. the average gram size of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics were decreased. The density of $(Bi_{0.1}Ba_{0.5}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ was 5.4524 [$g/cm^2$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.320-321
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• 2005

The $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C\sim1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor and temperature coefficient of the resonant frequency were 19.30, 14,662GHz, +4.1$8ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.194-199
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• 2011

In this study, non-stoichiometric 1-x$[(K_{0.5}Na_{0.5})_{0.97}(Nb_{0.96}Sb_{0.04})O_3]$ + x $CeMnO_3$ + 0.8 mol%CuO + 0.2 wt% $Ag_2O$ (x=0, 0.005) ceramics were prepared by a conventional mixed oxide and carbonate method, their dielectric and piezoelectric properties were investigated with the variations of sintering temperature. As $CeMnO_3$ substitution incereased, the density, piezoelectric constant($d_{33}$) and dielectric constant($\varepsilon_r$) were increased and the mechanical quality factor(Qm) was decreased. At the sintering temperature of $1100^{\circ}C$, the density, electromechanical coupling factor($k_p$), dielectric constant($\varepsilon_r$) and piezoelectric constant($d_{33}$) of 0.5mol% $CeMnO_3$ specimen showed the optimun values of 4.475 $g/cm^2$, 0.437, 552 and 166 pC/N, respectively. However, the mechanical quality factor($Q_m$) showed the minimum value of 380.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.659-662
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• 2004

The microwave dielectric properties of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics prepared by conventional mixed oxide method and sintered at $1400^{\circ}C-1450^{\circ}C$. According to X-ray diffraction patterns of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ phase were showed. Porosity of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics were reduced with increasing sintering temperature, but the bulk density was increased. In the case of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics sintered at $1425^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF) were 13.69, 63,754GHz and -29.37 $ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1011-1016
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• 2000

The (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~1375$^{\circ}C$ and 2hours. The structure and microwave dielectric properties were investigated with sintering temperature and composition ratio. From the X-ray diffraction patterns, the cubic SrTi $O_3$and hexagonal MgTi $O_3$structures were coexisted in the (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased and the temperature coefficient of resonant frequency($\tau$$_{f}$)was decreased with addition of SrTi $O_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to positive value with increasing SrTi $O_3$. In the case of 0.96MgTi $O_3$-0.04SrTi $O_3$ceramics sintered at 130$0^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.5, 5918(at 7.33GHz) and +10ppm/$^{\circ}C$, respectively.y.y.y.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.929-932
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• 2004

It is known that small amount of MgO in excess is often added to develop pure perovskite single phase of PMN-based composite, however, extra MgO precipitates in grains and inhibits densification of PMN. In this study PMN-PT-BT (PBT) powder was prepared by a conventional mixed oxide method using $(MgCO_3)_4{\cdot}Mg(OH)_2{\cdot}5H_{2}O$ instead of MgO. The precursor was heated at $500^{\circ}C/1h$ and its surface was modified with MgO sol. This effect was investigated in the aspects of sintering and dielectric properties. Small amount of added MgO sol ($0.5{\sim}1.0wt\%$) enhanced sintering substantially below $1000^{\circ}C$. The PBT with $0.5wt\%$ MgO sol sintered at $900^{\circ}C/2h$ had density of $7.62\;g/cm^3$, room temperature dielectric constant of 14800, loss of dielectric constant of $1.1\%$, which were comparable to those of the PBT sintered at $1000^{\circ}C/2h$. It was noticeable that the extra MgO precipitated mostly on triple points and grain boundaries and resulted in inhibition of grain growth.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.145-152
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• 2003

Capacitance of a hybrid capacitor that has characteristics of both electrolyte capacitor and supercapacitor is determined by anode surface covered with oxide layer. In this study, optimal condition processes for anode to fabricate a high voltage hybrid capacitor was investigated. We mixed aluminum powder having mean particle size of $40{\mu}m$ with NaCl powders at weight ratio of 4 : 1 and prepared a disk type electrode after annealing at various temperature. After dissolving NaCl in $50^{\circ}C$ distilled water, heat treatment, eletropolishing, chemical treatment, and the first and the second etching of Al disk were conducted. In each process, capacitances and resistances of the disk measured by ac-impedance analyzer were compared to find its optimum treatment condition. Also, the surface morphology of treated disks were observed and compared by SEM. After the second etching, the Al disk was anodized at 365V to make an anode of hybrid supercapacitor that can be operated at 300V, Capacitance and resistance of the anodized Al disk electrode was compared with those of commercialized conventional aluminum electrolytic capacitor at different frequencies.