• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.30 no.3
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• pp.77-86
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• 2002

위성은 일단 한 번 발사하고 나면 운용궤도상에서 수리 및 회수가 거의 불가능하기 때문에 위성에 들어가는 모든 개발 부품들은 완벽한 설계, 충분한 해석, 고 작업도의 제작, 그리고 다양한 시험이 반드시 수반되어야 한다. 위성시스템에서 전자 소자의 신뢰성에 영향을 주는 인자는 다양하다. 과도한 열은 전자소자의 실패를 유발해서 결과적으로는 전체 위성의 실패를 유도할 수 있다. 이 논문에서는 다목적 실용위성 2호의 고전력 소산 전장품의 열부하 완화를 위한 방안을 경우별로 연구 비교하였다. 고전력 소산 전장품의 열부하를 완화하기 위해서는 하우징 두께의 증가가 필요하며, 전력조절기의 다이오드나 트랜지스터처럼 전력소산이 큰 소자에 대해서는 장착위치를 변경하거나 장착 부분의 열전도율을 증가시키는 방법이 필요하다. 또한 전력조절기처럼 장착면이 좁은 경우에는 복사의 영향이 크며, 이러한 전장품의 열부하를 완화하기 위해서는 주위 벽면의 온도를 낮추거나 하우징 표면 방사율을 증가시키는 방법이 효과적임이 알 수 있다.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.329-336
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• 1990

In this investigation, bar-shaped specimens which consisted of three layers are prepared to study the effects of residual compressive stress on the mechanical properties in ZTA. The outer layers contained Al2O3 and unstabilized ZrO2 and the central layer contained Al2O3 and stabilized ZrO2(with 5.10wt% Y2O3). When cooled from the sintering temperature, some of zirconia in the outer layers transformed to the monoclinic form while zirconia in the central layer was retained in the tetragonal form. The transformation which induces to dilatational expansion led to the estabilishmenet of compressive stress in the outer layers and balances tensile stress in the central layer. Decrease of outer layer thickness(for a fixed total thickness)increases residual compressive stress. Because of residual compressive stress in the outer layers, the fracture toughness of outer layers of 3-layers composite is 10.21 Mpam1/2, which is increased to 25% above in comparison with 1-layer specimens in ZTA. Also, the 3-layers composite is believed to exhibite greater fracture resistance in contact damage environment from thermal shock test.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1462-1465
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• 2005

In this report, the FE characteristics of carbon nanotubes (CNTs) treated using both thermal annealing and mechanical coatings on the as-grown CNTs system atically studied. It was found that in the high temperature annealed samples, CNTs were attacked at its root during annealing due to a small amount of oxygen, and were pulled out of the substrate in places after FE measurements because of the contact resistance. However, for the mechanically coated samples both with spin on glass (SOG) and polymethyl methacrylate (PMMA), CNTs were found to be nearly intact after FE measurements and showed reliable FE characteristics over repeatable voltage scan. The reliability of CNTs during FE could be owing to the strong adhesion of CNTs to the substrate both by SOG and PMMA coatings.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.140-144
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• 2016

In this paper, core-shell structure of nickel/gold (Ni/Au) conductive layer on poly-methyl-methacrylate (PMMA) micro-ball was fabricated and its conduction property was investigated. Firstly, PMMA micro-ball was synthesized by using dispersion polymerization method. Size of the ball was $2.8{\mu}m$ within ${\pm}7%$ deviation, and appropriate elastic deformation of the PMMA micro-ball ranging from 31 to 39% was achieved under 3 kg pressure. Also, 200 nm thick Ni/Au conductive layer was fabricated on the PMMA micro-ball by uniformly depositing with electroless-plating. Adhesion of the conductive layer was optimized with help of surface pre-treatment, and the layer adhered without peeling-off despite of thermal expansion by collision with accelerated electrons. Composite paste containing core-shell structured particles well cured at low temperature of $130^{\circ}C$ while pressing the test chip onto the substrate to make electrical contact, and electrical resistance of the conductive layer showed stable behavior of about $6.0{\Omega}$. Thus, it was known that core-shell structured particle of the Ni/Au conductive layer on PMMA micro-ball was feasible to flexible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.88-93
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• 2003

Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.38-43
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• 2012

In this study, active metal brazing methods for $ZrO_2$ and Ti alloy were discussed. To get a successful metal-ceramic bonding, various factors (melting temperature, corrosion, sag resistance, thermal expansion coefficient etc. of base materilas and filler metal) should be considered. Moreover, in order to clarify bonding between the metal and ceramic, the mechanism of the interfacial structure of the joints should be identified. The driving force for the formation of metal and ceramic interfaces is the reduction of the free energy which occurs when their contact becomes complete. Interfacial bonding depends on the material combinations and the bonding processes. This study describes the bonding between ceramic and metal in an active metal brazing.

• Tribology and Lubricants
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• v.35 no.6
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• pp.362-368
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• 2019

In this study, mechanical and tribological properties were investigated by varying the process temperature (50, 100, 125 and 150℃) to reduce internal stress. The internal stress reduction by thermal dissociation ta-C coating film with increasing temperature is confirmed through the curvature radius of the ta-C coating according to the temperature of the SUS plate. As the coating temperature increased, the mechanical properties (hardness, modulus, toughness) deteriorated, which is in agreement with the Raman analysis results. As the temperature increased, the sp² phase ratio increased owing to the dissociation of the sp³ phase. The friction and wear properties are related to the process temperature during ta-C coating. Low friction and wear properties are observed in high hardness samples manufactured at 50℃, and wear resistance properties decreased with increasing temperature. The contact area is expected to increase owing to the decrease of hardness(72 GPa to 39 GPa) and fracture toughness with increasing temperature which accelerated wear because of the debris generated. It was confirmed that at process temperature of over than 100℃, the bond structure of the carbon film changed, and the effect of excellent internal stress was reduced. However, the wear resistance simultaneously decreased owing to the reduction in fracture toughness. Therefore, in order to increase industrial utilization, optimum temperature conditions that reduce internal stress and retain mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.