• 대한전자공학회논문지
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• 제27권9호
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• Nuclear Engineering and Technology
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• 제55권4호
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• pp.1518-1527
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• 2023

A method was proposed for in-situ evaluating the thickness and resistivity of the oxide/hydroxide film formed on the surface of aluminum alloy exposed to sump water formed in the containment after a loss-of-coolant accident. The evaluation entailed fitting a model for the film impedance, which has film thickness and other variables describing the resistivity profile of the film along its thickness direction as fitting parameters, to the practically measured electrochemical impedance data. The obtained resistivity profiles implied that the films formed at pHs_25℃ 7, 8, 9, 10, and 11 all had a duplex structure; compared to the outer layer in contact with the solution, the inner layer of the film had a much higher resistivity and was inferred to be denser and provide most of the protectiveness of the film. Both the thickness and the total resistance of the film decreased with the increasing solution pH_25℃, suggesting that the films formed in more alkaline solutions had less protectiveness against corrosion, consistent with the increasing aluminum alloy corrosion rates previously identified.

• 한국정밀공학회지
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• 제31권10호
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• pp.881-887
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• 2014

Peltier 효과를 이용한 박막형 열전 냉각 모듈은 열전 재료에 의한 열 출입의 방향에 따라서 수직형 구조와 수평구조로 나누어진다. 이와 같은 박막형 열전 냉각 모듈의 성능은 기존의 벌크 형태의 냉각 모듈을 평가하기 위해 사용하는 모델을 이용하여 측정할 수 있다. 우리가 제조한 열전 박막을 모델에 적용하여 열전재료의 길이 변화에 따른 열 방출 성능을 평가 하여 보았다. 재료의 성능이 향상됨에 따라서 동일한 열 전기적 저항에서 최대 열 방출 성능은 $73.9W/cm^2$에서 $131.2W/cm^2$으로 크게 증가하는 것을 알 수 있었다. 또한 방사 형태로 $10{\mu}m$ 두께의 열전 재료와 전극들이 두께가 각기 다른 기판 위에 형성된 수평형 냉각 모듈을 설계하여 $10{\mu}m$ 두께의 $SiO_2$ 멤브레인 위에 열전재료가 형성된 열전 모듈에서 22 K의 온도 차를 해석결과로부터 알 수 있었다. 이와 같은 결과로부터 열전 재료의 특성과 모듈의 열 전기적 저항은 필연적으로 짧은 열전 재료의 길이와 두께를 갖는 박막형 열전 모듈을 높은 효율의 모듈로 설계하기 위해 반드시 고려되어 되어야 할 요소임을 확인 할 수 있다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1792-1797
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• 2007

This paper try to find root-cause of failure in a connector used in transmitting signals for throttle body control in automotives by analyzing possible failure causes and performing experiments to simulate the cable failure in field. The connector comprises fins, wires, and case moldings. The failure is due to degradation of initial clamping force required fixing fins and wires in the connector. Expansion and compression of the case molding material surrounding fins would cause the degradation. Investigations of strict initial claming force and control of thermal expansion property of the molding are required to prevent the failure.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 제3회 최신 분말제품 응용기술 Workshop
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• pp.133-155
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• 2002

1. Quasicrystalline powders shows exotic physical and mechanical p properties 2. Applications: structural application: strengthening particles for composites C Coating application: wear resistance, low friction coefficient 3. For thermal spaying: material loss during process should be c considered to control chemical composition of deposit 4. Friction coefficient is strongly dependent on contact geometry F Friction coefficient from pin on plate: 0.1-0.2 Friction coe야icient from flat on plate: about 0.46. 5. Quasicrystalline materials show lower friction coefficient but higher w wear rate than corresponding values of $Cr_20_3$ coated layer. 6. Amorphous coating seems to be promising

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.18-21
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• 1996

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.973-979
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• 1995

The input equivalent noise charge (ENC) of hydrogenated amorphous silicon radiation detector diodes was measured and analyzed. The noise sources of amorphous silicon diodes were analyzed into three sources; shot noise, flicker noise and thermal noise from the contact resistance. By comparing the measured ENC with the calculated signal charge in uniform generation case, the signal-to-noise ratio (S/N) for the sample diodes is estimated as a function of the detector bias and the shaping time of Gaussian pulse shaper. The maximum S/N occurred at the bias level just above the full depletion voltage for shaping time of 2∼3 ${\mu}$sec. The developed method is useful in optimum design or amorphous silicon p-i-n diodes for charged particulate radiation spectroscopy.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 추계학술발표대회 논문집
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• pp.17-21
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• 2000

Logarithmic electrical resistivity of the untreated or thin diameter carbon fiber composite increased suddenly to the infinity when the fiber fracture occurred by tensile electro-micromechanical test, whereas that of the ED or thick fiber composite increased relatively broadly up to the infinity. Electrical resistance of single-carbon fiber composite increased suddenly due to electrical disconnection by the fiber fracture in tensile electro-micromechanical test, whereas that of SFC increased stepwise due to the occurrence of the partial electrical contact with increasing the buckling or overlapping in compressive test. Electrical resistivity measurement can be very useful technique to evaluate interfacial properties and to monitor curing behavior of single-carbon fiber/epoxy composite under tensile/compressive loading.

• 전자공학회논문지A
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• 제29A권3호
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• pp.79-86
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• 1992

The cause of excess current noise which appears some times in RuO$_2$ thick film chip resistors and the process to reduce such noise are investigated. We observed that too large thermal expansion coefficients of resistor paste and electrode metal paste can induce the mechanical stress and microcracks in the contact region of the two sintered materials. Such microcracks result in the reduction of conduction paths in the sintered electrode and this provokes the increase of the resistance value and the current noise. Such excessive current noise induced by microcracks could be reduced or even eliminated by using an enlarged overcoat patterns in the plating process or by adding an additional annealing process before plating.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.