• Title/Summary/Keyword: Contact Thermal Resistance

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A study on Au-Sn alloy plating layer improving reliability of electrical contacts (전자부품 커넥터의 접속 신뢰성 향상을 위한 Au-Sn 합금 도금층 연구)

  • Choi, Jong Hwan;Son, Injoon
    • Journal of the Korean institute of surface engineering
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    • v.55 no.6
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    • pp.408-416
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    • 2022
  • In this study, the effect of Au-Sn alloy coating on reliability of electrical contacts was investigated via comparison with Au-Co alloy coating. The results show that Au-Sn alloy exhibited lower contact resistance and higher solder spreadability than those of Au-Co alloy after thermal aging. In the case of Au-Co alloy plating, the underlying Ni element diffused into Au-Co layer to form Ni oxides on surface during thermal aging, leading to increased contact resistance and decreased solder spreadability. Meanwhile, for Au-Sn alloy plating, Au-Ni-Sn metallic compound was formed at the interface between Au-Sn layer and underlying Ni layer. This compound acted as a diffusion barrier, thereby inhibiting the diffusion of Ni to Au-Sn layer during thermal aging. Consequently, Au-Sn alloy layer showed better contact reliability than that of Au-Co alloy layer.

The Electrical Roperties of TiN/$TiSi_2$ Bilayer Formed by Rapid Thermal Anneal at Submicron Contact (급속열처리에 의한 TiN/$TiSi_2$ 이중구조막을 이용한 submicron contact에서의 전기적 특성)

  • 이철진;성만영;성영권
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.78-88
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    • 1994
  • The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

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Electrical properties of polyethylene composite films filled with nickel powder and short carbon fiber hybrid filler

  • Mironov, V.S.;Kim, Seong Yun;Park, Min
    • Carbon letters
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    • v.14 no.2
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    • pp.105-109
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    • 2013
  • Effects of the amount of nickel powder (Ni) in Ni-carbon fiber (CF) hybrid filler systems on the conductivity(or resistivity) and thermal coefficient of resistance (TCR) of filled high density polyethylene were studied. Increases of the resistivity and TCR with increasing Ni concentration at a given hybrid filler content were observed. Using the fiber contact model, we showed that the main role of Ni in the hybrid filler system is to decrease the interfiber contact resistance when Ni concentration is less than the threshold point. The formation of structural defects leading to reduced reinforcing effect resulted in both a reduction of strength and an increase of the coefficient of thermal expansion in the composite film; these changes are responsible for the increases of both resistivity and TCR with increasing Ni concentration in the hybrid filler system.

Stepwise Ni-silicide Process for Parasitic Resistance Reduction for Silicon/metal Contact Junction

  • Choi, Hoon;Cho, Il-Whan;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.4
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    • pp.137-142
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    • 2008
  • The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

A Study on Intrinsic Noise of Capacitively Coupled Active Electrode (용량성 결합 능동 전극의 내부 잡음 분석)

  • Lim, Yong-Gyu
    • Journal of the Institute of Convergence Signal Processing
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    • v.13 no.1
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    • pp.44-49
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    • 2012
  • The indirect-contact ECG measurement is a newly developed method for unconstrained and nonconscious measurement in daily Life. This study is the first step to reducing the large background noise appearing in indirect-contact ECG. This study built the thermal noise model of capacitively coupled active electrode which is used in indirect-contact ECG. The results show that the level of thermal noise estimated by the thermal noise model is much the same as that of actual background noise for the capacitively coupled active electrode alone. By applying the actual electrical properties of a sample cotton cloth to the thermal noise model, the theoretical level of thermal noise in the indirect-contact ECG was estimated. The results also show that the level of op-amp's intrinsic noise is so small that it can be negligible in comparison with thermal noise of resistors. The relationship between the level of thermal noise and the resistance of the bias resistor was derived, and it is the base for the further study how to choice the optimal resistance for the bias resistor.

Study on the Electrical Insulation of Current Lead in the conduction-cooled 1-2kV Class High-Tc Superconducting DC Reactor (전도냉각되는 1-2kV급 고온초전도 직류리액터 전류도입부의 전기적 절연에 대한 연구)

  • 배덕권;안민철;이찬주;정종만;고태국;김상현
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.1
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    • pp.30-34
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    • 2002
  • In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

The Molecular Structures of Poly(3-hexylthiophene) Films Determine the Contact Properties at the Electrode/Semiconductor Interface

  • Park, Yeong Don
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2277-2280
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    • 2014
  • The contact properties between gold and poly(3-hexylthiophene) (P3HT) films having either of two distinct molecular orientations and orderings were investigated. Thermal treatment increased the molecular ordering of P3HT and remarkably reduced the contact resistance at the electrode/semiconductor interface, which enhanced the electrical performance. This phenomenon was understood in terms of a small degree of metal penetration into the P3HT film as a result of the thermal treatment, which formed a sharp interface at the contact interface between the gold electrode and the organic semiconductor.

Electrical Characteristics of $TiSi_2$ Salicide Contact ($TiSi_2$ SALICIDE CONTACT의 전기적 특성)

  • Lee, Cheol-Jin;Yang, Ji-Woon;Lee, Nae-In;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.178-182
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    • 1991
  • Contact resistance and contact leakage current of the $Al/TiSi_2/Si$ system are investigated for $N^+\;and\;P^+$ junctions. Titanium disilicide is one of the most common silicides because of its thermal stability, ability, to form selective formation and low resistivity. In this paper, the effect of RTA temperature and Junction implant dose are characterized. The $TiSi_2$ contact resistance to $N^+$ silicon is lower than that of Al to $N^+$ silicon, but $TiSi_2$ of contact resistance to $P^+$ silicon is higher than that of Al to $P^+$ silicon. The $TiSi_2$ of contact leakage current to $N^+\;and\;P^+$ silicon is similar to that of Al contact.

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Thermal Resistance Modeling of Linear Motor Driven Stages for Chip Mounter Applications (칩 마운터용 리니어 모터 스테이지의 열저항 모델링)

  • Jang, Chang-Su;Kim, Jong-Yeong;Kim, Yeong-Jun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.5
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    • pp.716-723
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    • 2002
  • Heat transfer in linear motor driven stages for surface mounting device applications was investigated. A simple one-dimensional thermal resistance model (TRM) was introduced. In order to reduce three-dimensional nature to one-dimensional, a few assumptions and simplifications were employed suitably. A good agreement with a finite element heat transfer analysis in temperature profile was obtained. For validation, the analysis was compared with the measurement with respect to motor driving power. Overall discrepancy was less than 7$^{\circ}C$. The influence of two high thermal resistance parts, insulation sheet and thermal contact between the coil assembly and the mounting plate, was examined through the analysis. Additionally, the thermal resistance analysis was applied to another stage including an internal cooling-air passage, and was found available for this system as well. After validation, the cooling effect was surveyed in terms of motor power, and cooling-air and -water flow rate.

Thermal Resistance Modeling of Linear Motor Driven Stages for Chip Mounter Applications (칩 마운터용 리니어 모터 스테이지의 열저항 모델링)

  • Jang, Chang-Soo;Kim, Jong-Young;Kim, Yung-Joon
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.96-101
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    • 2001
  • Heat transfer in linear motor driven stages for surface mounting device applications was investigated. A simple one-dimensional thermal resistance model was introduced. In order to reduce three-dimensional nature to one-dimensional, a few assumptions and simplifications were employed suitably. A good agreement with a finite element heat transfer analysis in temperature profile was obtained. For validation, the analysis was compared with the measurement with respect to motor driving power. Overall discrepancy was less than $7^{\circ}C$. The influence of two high thermal resistance parts, insulation sheet and thermal contact between the coil assembly and the mounting plate, was examined through the analysis. Additionally, the thermal resistance analysis was applied to another stage including an internal cooling-air passage, and was found available for this system as well. After validation, the cooling effect was surveyed in terms of motor power, and cooling-air flow rate.

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