• Journal of Powder Materials
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• 제18권5호
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• pp.423-429
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• 2011

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.80-80
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• 1999

• Journal of the Korean Vacuum Society
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• 제12권4호
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• The Journal of Engineering Geology
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• 제20권1호
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• pp.71-78
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• 2010

The Gagok mine is a contact metasomatic deposit, located at Gagok-myeon, Samcheok city and Cheoram-dong, Taebaek city, Gangwon province. The deposit lies within the limestone of Myobong and Pungchon formations, and exists the contact of intrusive granite porphyry. In order to determine the direction and extension of mineralization in the gallery and around the entrance of the ore deposit, we used the ground magnetic survey, the direct current (dc) resistivity survey using dipole-dipole array, and resistivity tomography survey. The ground magnetic survey did not detect the anomalous zone due to ore deposit, while the dc resistivity survey and resistivity tomography survey were successful in delineating the anomalous zone related to the extension of fault toward $N50^{\circ}W$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제50권4호
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• pp.153-160
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• 2001

In order to analyze the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature. Then, the degradation process was evaluated by comparing contact angle, surface potential, surface resistivity, and XPS. The experimental results showed that the amount of weight loss, contact angle, surface potential and surface resistivity increased up to 200 $^{\circ}C$ as a function of temperature. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. In XPS to analyze surface chemical structures, the increased hydrophobicity in thermal increase of unsaturated double bond in carbon chains. Aslo, thermal treatment caused the discoloration on the point of treated surface. These phenomena were attributed to the generations of ether group.

• Journal of the Korean Vacuum Society
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• 제10권2호
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• pp.219-224
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• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제20권3호
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Transactions of the Society of Information Storage Systems
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• 제10권2호
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• Proceedings of the Korean Society For Composite Materials Conference
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• 한국복합재료학회 2001년도 춘계학술발표대회 논문집
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• pp.258-262
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• 2001

The contact resistivity was correlated with IFSS and microfailure modes in conductive fiber/cement composites electro-pullout and AE. As IFSS increased, the number of AE signals increased and the contact resistivity increased latter to the infinity. In dual matrix composite (DMC) test and AE, the number of signals with high amplitude and energy in g]ass fiber composite is significantly larger than that of no-fiber composite. Many vertical and diagonal cracks were observed in glass fiber and no-fiber composite under tensile test, respectively. Electro-micromechanical technique and AE can be used efficiently for sensitive nondestructive (NDT) evaluation and to detect microfailure mechanisms in various conductive fibers reinforced brittle and nontransparent cement composites.