• 정보저장시스템학회논문집
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• 제10권2호
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• Tribology and Lubricants
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• 제28권4호
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• pp.173-177
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• 2012

We used contact resonance force microscopy (CRFM) technique to determine the quantitative elastic properties of multiple materials integrated on the sub micrometer scale. The CRFM approach measures the frequencies of an AFM cantilever's first two flexural resonances while in contact with a material. The plain strain modulus of an unknown or test material can be obtained by comparing the resonant spectrum of the test material to that of a reference material. In this study we examined the following bumping materials for flip chip by using copper electrode as a reference material: NiP, Solder (Sn-Au-Cu alloy) and under filled epoxy. Data were analyzed by conventional beam dynamics and contact dynamics. The results showed a good agreement (~15% difference) with corresponding values determined by nanoindentaion. These results provide insight into the use of CRFM methods to attain reliable and accurate measurements of elastic properties of materials on the nanoscale.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.434-435
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• 2009

The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• 한국생산제조학회지
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• 제25권5호
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• pp.380-385
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• 2016

Railway tracks are repeatedly overstressed and damaged owing to increase in passing tonnage and numerous contact cycles between wheels of train and rails. In order to ensure safe train operation, heat-treated rails are used in addition to regular inspection and maintenance of these rails. Normal rails were treated using ultrasonic nanocrystal surface modification (UNSM) to strengthen the surface of rails. A few changes in surface properties were detected with respect to hardness and compressive residual stress after UNSM treatment. Wear and rolling contact fatigue tests were performed using rails whose surfaces were hardened by UNSM and heat-treated rails. The amount of wear and fatigue life cycles were measured to estimate the effect of UNSM on the rail material. The material of the surfacehardened rail showed improved wear and rolling contact fatigue properties.

• Structural Engineering and Mechanics
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• 제44권1호
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• pp.61-72
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• 2012

The paper is on contact analysis of a spherical ball with a deformable flat, considering the effect of tangent modulus on the contact parameters of a non-adhesive frictionless elastic-plastic contact. The contact analysis of this model has been carried out using analysis software Ansys and Abaqus. The contact parameters such as area of contact between two consecutive steps, volume of bulged material are evaluated from the formulated equations. The effect of the tangent modulus is considered for determining these parameters. The tangent modulus are accounted between 0.1E and 0.5E of materials E/Y value greater than 500 and less than 1750. Result shows that upto an optimal tangent modulus values the elastic core push up to the free surface in the flat. The simulation is also carried out in Abaqus and result provide evidence for the volume of bulged material in the contact region move up and flow into the free surface of the flat from the contact edge between the ball and flat. The strain energy of the whole model is varied between 20 to 40 percentage of the stipulated time for analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.356-362
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• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.136-139
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• 1995

This paper summarizes recent development in the silicon cell area : PERL (passivated emitter, rear locally diffused cells) ,BCSC ( buried contact solar cells ) rind Hybrid buried contact / PERL cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.179-180
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• 2007

반도체의 최소 회로 선폭이 감소함에 따라 Contact 저항이 크게 증가하게 된다. Contact 저항을 낮추기 위하여 Tungsten Metal Contact을 일반적으로 사용하며, Si 기판과의 Ohmic 접촉 및 WF6의 Fluorine과 Si 반응을 억제하기 위한 Barrier Metal로 Ti/TiN 이중막을 사용한다. 본 논문에서는 90nm급 이하 제품의 CVD Ti/TiN Barrier Metal이 유발하는 불량 현상과 원인 규명에 대하여 연구하였으며, Ohmic Contact형성을 위해 TiSix형성 최적화 방안에 대해 정리하였다.