• Current Optics and Photonics
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• v.2 no.1
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• pp.59-68
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• 2018

Opto-acoustic systems provide structural and functional information regarding biological tissues. Conventional opto-acoustic systems typically employ continuous or pulsed lasers as transmission sources. Compared to lasers, light emitting diodes (LEDs) are cost-effective and relatively portable excitation sources but are non, coherent. Therefore, in this study, a relatively low cost lens - a type of Ramsden eyepiece - was specially designed to theoretically calculate the illumination and achieve a constant brightness across the pupil of an eye. In order to verify the capability of the developed light-emitting diode-acoustic (LEDA) systems, we carried out experiments on bovine and bigeye tuna eyeball samples, which are of similar size to the human eye, using low frequency (10 MHz) and high frequency (25 MHz) ultrasound transducers. High frequency ultrasound transducers are able to provide higher spatial resolution compared to low frequency ultrasound transducers at the expense of penetration depth. Using the 10 MHz and 25 MHz ultrasound transducers, acceptable echo signals (3.82, 3.94, and 5.84 mV at 10 MHz and 282, 1557, 2356 mV at 25 MHz) from depth greater than 3 cm and 6 cm from the anterior surface of the eye were obtained. We thereby confirmed that the LEDA system using a pulsed LED with the designed Ramsden eyepiece lens, used in conjunction with low and high frequency ultrasound transducers, has the potential to be a cost-effective alternative method, while providing adequate acoustic signals from bovine and bigeye tuna ocular areas.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.184-189
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• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.3
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• pp.274-284
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• 2003

Multi-level converter that is high-capacity electric power conversion system is used widely to electric motor drive system and FATCs(Flexible AC Transmission Systems). H-Bridge converter has been prevalently applied to shunt-type system because it can be easily expanded to the multi-level. In steady states, converter is normally operated in the range of 0.7∼0.8 of modulation Index. Even though zero vectors are not imposed to high modulation index, DC-Link voltage Is constant. It means that converter has another boost vector except for zero vectors among several vectors in 3-level converter. This paper has examined the principle of boost vector and investigated the difference between another boost vector and zero vectors in 3-level converter. In addition, this paper has analysed and compared the charging currents and the capacitor voltages of two topologies. The currents and voltages are related to reference voltage. Therefore, it proposed the calculation method for the voltage ripple and the charging current of each capacitor and compared various DC-Link voltage control methods through the simulation.

• Convergence Security Journal
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• v.20 no.2
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• pp.123-135
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• 2020

Since AlphaGo's Match in 2016, there has been a growing calls for artificial intelligence applications in various industries, and research related to it has been actively conducted. The same is true in the military field, and since there has been no weapon system with artificial intelligence so far, effort to implement it are posing a challenge. Meanwhile, AlphaGo Zero, which beat AlphaGo, showed that artificial intelligence's self-training data-based approach can lead to better results than the knowledge-based approach by humans. Taking this point into consideration, this paper proposes to apply Reinforcement Learning, which is the basis of AlphaGo Zero, to the Shipboard Combat System or Combat Management System. This is how an artificial intelligence application to the Shipboard Combat System or Combat Management System that allows the optimal tactical assist with a constant win rate to be recommended to the user, that is, the commanding officer and operation personnel. To this end, the definition of the combat performance of the system, the design plan for the Shipboard Combat System, the mapping with the real system, and the training system are presented to smoothly apply the current operations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Journal of IKEEE
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• v.23 no.4
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• pp.1122-1127
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• 2019

In this study, the bio-impedance of the human body is able to obtain a lot of information by monitoring the pathological and physiological conditions of clinical and biological tissues. The four electrode method system for biometrics measured the potential difference between two electrodes and the other two electrodes were used as electrodes for current flow. The newly developed dry gold electrode measured impedance from 1 Hz to 50 kHz and produced reproducible results. To verify the impedance measurement of the dry electrode, the pitting was performed using an equivalent circuit model of the bioelectrode skin, and the effectiveness was demonstrated through modeling. Fixed electrode types have a constant position of the electrodes attached during the measurement, so that a stable measurement can be obtained, thereby minimizing the error.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.133-137
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• 2016

Use of UV gel for nail management have been increasing gradually. In order to develop an UV lamp necessary to UV gel, in this study, we was designed circuits of the UV-LED lamp. Power supply part that supplies constant power to the several UV-LEDs, was designed the circuit with the method of DC-DC converter. Taking into account the direction of the thumb nail and the position of the little finger nail, it was placed UV-LEDs. Input power of the power supply part was used as a battery voltage of 3.8[V]. The output voltage of the power supply part was appeared in approximately 3.1[V]. And in order to examine the state of change of the output voltage according to the amount of current consumption of UV-LEDs, after inserting of load resister, the output voltage was more than about 3.0[V] in the simulation results of the power supply part while changing the resistance value.

• The Journal of Korean Medicine
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• v.23 no.2
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• pp.97-107
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• 2002

Objective : Acupuncture is a method used to treat many kinds of pain in oriental cultural medicine. Especially when hetero-segmental area acu-points are stimulated, the therapeutic effects of pain control have more critical properties than other methods of acupuncture. However, the mechanism of pain control by acupuncture is contradictory so far. The present study examined the effects of electroacupuncture (EA) applied to the acu-point of the hetero-segmental area on modulation of formalin-induced pain in Sprague-Dawley rats. Methods : In order to apply EA to acu-points in the plantar area of right forepaws, a pair of Teflon-coated stainless steel wires were implanted in HT 7 (Shin-Moon) and PC 7 (Dae-Reung) 7 days before the behavioral test. A behavioral test was performed by means of video camera after injection of 5% formalin ($50{\;}\mu\textrm{l}$) into the lateral plantar region of the left hind paw. EA was delivered by a constant DC current stimulator at 4~5 mA, 2 ms, and 10 Hz for 30 min. c-Fos protein expression was measured in the lumbar spinal cord at 2 hr and 4 hr after formalin injection. Results : Behavioral responses including favoring, flinching and biting occurred in the biphasic pattern, such as the 1st phase (0~5 min) and the 2nd phase (20~45 min) after formalin injection. However, EA (4~5 mA, 2 ms, 10 Hz) significantly inhibited the behavioral responses. Injection of formalin expressed c-Fos protein on the ipsilateral dorsal horn neurons in L3 - L5 and the expression was sustained more than 4 hrs after formalin injection. However, EA decreased c-Fos protein expression at dorsal horn neurons in the lumbar spinal cord till 4hrs after formalin injection. Conclusions : These results suggest that EA modulates formalin-induced pain and this inhibitory action may be elicited by the descending inhibitory system.