• The Korean Journal of Ceramics
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• 제3권1호
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Composites Research
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• 제37권3호
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• pp.170-178
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• 2024

본 연구에서는 탄소섬유 강화 플라스틱(CFRP)에 얇은 구리 필름(Cu film)이 배치된 hybrid composite이 제안되었으며, 두께방향 열전도도가 최대가 될 수 있는 Cu film 배치조합을 도출하는데 양자 어닐링(Quantum Annealing)이 적용되었다. CFRP의 각 ply와 Cu film간의 상관관계 분석이 유한요소 해석을 통해 수행되었으며, 수행된 결과를 바탕으로 조합 최적화 문제가 정의되었다. 정의된 문제를 양자 어닐링에 임베딩하기 위한 공식화 과정이 진행되었으며 이를 통해 CFRP의 각 ply에 투입될 수 있는 Cu film 수량에 관한 목적함수와 제약조건이 수식으로 구현되었다. 공식화된 수식은 D-Wave 양자 어닐러에 임베딩되기 위해 Ocean SDK(software development kit)와 Leap을 통해 프로그래밍 되었으며, 양자 어닐링 과정을 통해 두께 방향 열전도도가 최대를 만족하는 최적의 Cu film 배치 조합이 도출되었다. 도출된 배치 조합은 투입될 수 있는 Cu film의 수량이 적어질수록 단순한 배치 형태를 나타내었으며, 수량이 많아질수록 세밀한 배치를 보였다. Cu film의 배치 수량에 따라 생성된 최적 조합들은 두께 방향으로의 고유 열전도 경로를 나타내었으며, Cu film의 횡방향 배치 자유도가 두께 방향 열전도도 결과에 민감하게 나타날 수 있음을 보였다.

• 정보저장시스템학회논문집
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• 제2권1호
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• pp.85-90
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• 2006

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential $3\omega$ method. Also, verification of differential $3\omega$ method has been accomplished with various proposed criteria. The target film for the measurement is 300 nm thick silicon dioxide which is covered with upper protective layer of various thicknesses. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. Since the verification of differential $3\omega$ method has not been conducted yet, we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential $3\omega$ method is verified to be reliable as long as the proposed preconditions of the samples are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between thickness of the upper protective layer and width of the heater line due to heat spreading effect.

• 한국재료학회지
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• 제33권4호
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• pp.159-163
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• 2023

Zinc-ion Batteries (ZIBs) are currently considered to be effective energy storage devices for wearable electronics because of their low cost and high safety. Indeed, ZIBs show high power density and safety compared with conventional lithium ion batteries (LIBs) and exhibit high energy density in comparison with supercapacitors (SCs). However, in spite of their advantages, further current collector development is needed to enhance the electrochemical performance of ZIBs. To design the optimized current collector for high performance ZIBs, a high quality graphene film is suggested here, with improved electrical conductivity by controlling the defects in the graphene film. The graphene film showed improved electrical conductivity and good electron transfer between the current collector and active material, which led to a high specific capacity of 346.3 mAh g^-1 at a current density of 100 mA g^-1, a high-rate performance with 116.3 mAh g^-1 at a current density of 2,000 mA g^-1, and good cycling stability (68.0 % after 100 cycles at a current density of 1,000 mA g^-1). The improved electrochemical performance is firmly because of the defects-controlled graphene film, leading to improved electrical conductivity and thus more efficient electron transfer between the current collector and active material.

• 한국재료학회지
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• 제21권8호
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• pp.456-460
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• 2011

Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.248.1-248.1
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• 2014

We present results from an experimental study of conductivity change of poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) film according to the surface structuring. We demonstrate that the patterned structure was enhanced with approximately five times conductivity in comparison with non structure of PEDOT:PSS film. In order to patterning, we have fabricated polystyrene (PS) colloidal monolayer as a template with sphere diameter of 780nm and 1.8um. Structure has honeycomb shape and it provide shorter path way to flowing of electron. Pattern size was controlled by PS diameter and varied by Transformer Coupled Plasma (TCP) etching system. Conductivity was converted from sheet resistance which measured by 4-point prove. Film thickness was derived using Field Emission Scanning Electron Microscopy (FE-SEM) images.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.228-231
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• 1999

The preparation and electrical properties of LIPON electrolyte were investigated in order to fabricate all solid state thin film battery. The LIPON thin film was deposited by r.f. sputtering of Li$_3$PO$_4$ target in O$_2$-N$_2$ mixtures. The LIPON deposited at N$_2$+10% O$_2$ ratio had a conductivity at 25 $^{\circ}C$ of 1.8${\times}$10$\^$-6/S/cm. The ion conductivity of the LIPON films decreased as the O$_2$ content of the process gas increased.

• 한국재료학회지
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• 제31권12호
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• pp.665-671
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• 2021

A 1.8 ㎛ thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2182-2187
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• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.

• 한국세라믹학회지
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• 제27권7호
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.