• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.187-187
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• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• 한국세라믹학회지
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• 제39권3호
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• pp.233-239
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• 2002

CRT의 전면에 전자파차폐, 정전기 방지 및 저반사 효과를 위해 코팅되는 $SiO_2$/ITO (Indium Tin Oxide) 이층박막의 반사특성에 관하여 연구하였다. 실리카층 및 ITO층의 두께를 변화시키며 나타나는 반사율의 경향을 고찰하고, 이론적인 2층, 3층 저반사코팅의 디자인에 적용시켜 보았다. 입자 상으로 코팅된 ITO는 두께가 증가할수록 기공에 의해 박막의 불균일성이 증가하면서 이론적인 반사모델과의 차이가 커졌다. 실리카와 ITO의 계면에 존재하는 혼합층의 영향으로 인하여 실제측정반사율은 2층으로 디자인한 이론반사율보다 $SiO_2$/$SiO_2$+ITO/ITO의 3층으로 디자인한 반사모델에 보다 잘 적용되었다. 이론적인 저반사 디자인은 근거로 $SiO_2$/ITO 박막의 두께를 90, 65 nm로 조절한 이층막은 기준파장에서 2.5%의 반사율을 나타내었고, 가시광선 영역에서 이론반사율과 유사한 거동을 보였다.

• 한국전자파학회논문지
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• 제14권5호
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• pp.536-541
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• 2003

본 논문에서는 다이아몬드 표면에의 산소흡착을 억제함으로써 양호한 전기적특성을 가지는 다이아몬드 MISFET를 제작하기 위해 초고진공 프로세스(ultrahigh vacuum process)에 의해 A1/Ca $F_2$/diamond MISFET를 제작하였다. 박막반도체 다이아몬드의 표면도전층으로서는 불소종단에 의해 형성되는 표면 도전층을 이용하였다. 초고진공 프로세스에 의해 제작된 A1/Ca $F_2$/diamond MISFET로부터 상용화된 실리콘 MOSFET와 동등한 레벨인~$10^{11}$ /$cm^2$ eV의 저농도의 표면준위밀도가 관측되었고, 유효이동도 $\mu$ $e_{ff}$ 는 이제까지 발표된 박막반도체 다이아몬드 FET중 최고치인 300 $cm^2$/Vs 이었다. 본 논문에서는 또한 초고진공 프로세스에 의해 제작된 Al/Ca $F_2$/diamond MISFET를 이용하여 인버터회로(inverter circuit)를 제작하였으며, 고온고주파 환경에서 양호한 전기적 특성을 관찰하였다. 본 논문의 특징은 초고진공 프로세스에 의해 제작된 불소화 다이아몬드 박막반도체 MISFET에 관한 최초의 보고이며, 또한 다이아몬드 박막반도체 MISFET의 인버터회로(inverter circuit)동작에 관한 최초의 보고이다.다.

• 한국재료학회지
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• 제21권2호
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1515-1516
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjection a 40:60(vol%) mixture of zirconium diborided ($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS) under argon atmosphere. Inner diameters of graphite mold were $15mm{\varphi}$ and $20mm{\varphi}$, respectively. The relative densities of $15mm{\varphi}$ and $20mm{\varphi}$ sample were 99.4% and 97.88%, respectively. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The result of FE-SEM of fracture face of $15mm{\varphi}$ sample was intergranular fracture and that of $20mm{\varphi}$ sample was transgranular fracture. Because the fracture strength of $15mm{\varphi}$ sample was much higher than that of $20mm{\varphi}$ sample. The electrical resistivity, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$ of $15mm{\varphi}$ sample was higher than that, $6.17{\times}10^{-4}{\Omega}{\cdot}cm$ of $20mm{\varphi}$ sample because of densification. Although sintering condition of SPS is same. the properties of sintered SiC-$ZrB_2$ compacts were changed according to inner diameter of graphite mold.

• 조명전기설비학회논문지
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• 제23권1호
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• pp.176-181
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• 2009

본 연구에서는 염료 태양전지(Dye-sensitized solar cells; DSCs)에 적용하기 위한 나노-다공질의 FTO(F:$SnO_2$) 재료를 Sol-gel 연소법을 이용하여 다양한 열처리 온도를 변수로 제작하였으며, 각각의 결과물들에 대한 물성적 특성을 고찰하였다. FTO nano-powder는 SnCl4-98.0[%]와 HF-$48{\sim}51$[%]가 교반된 것에 NH4OH를 Sol-gel법의 촉매로 사용하였고, 첨가재로써 Ketjen Black을 사용하였다. 얻어진 결과물에 대한 XRD 측정 결과, 열처리 온도가 상승함에 따라 $SnO_2$의 회절각인 25.6[$^{\circ}$]($2{\Theta}$) 부근에서 강한 peak값이 나타났다. XPS 측정 결과에 의하면, 각각의 F1s, Sn 3d, O 1s의 binding energy는 682, 484, 528[eV]에서 광전자 피크가 확인되었다. 열처리 온도가 증가함에 따라 표면적이 감소하며, pore size는 증가함을 BET측정 결과로 알 수 있었다. 본 실험을 통해 열처리 온도조절에 따른 나노-다공성 FTO powder의 특성제어가 용이함이 확인되었고, Sol-gel 연소법에 의한 간단하고 효과적인 방법으로 나노-다공성 소재의 제작이 가능하여, DSCs의 응용에도 유용할 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• 한국수산과학회지
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• 제9권1호
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• pp.8-12
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• 1976

1. 진동방지에는 $W/W_n<\sqrt{2}$일 때는 $C/_cC$가 큰 유화고무$(1\~2\%,\;4\~5\%)$가 좋다. 2. $W/W_n<\sqrt{2}$ 일때는 $C/_cC$가 작은 유화고무$(2.5\%\~3.5\%)$가 좋다. 3. 대수감쇠율의 값을 크게 하려면 저유화 고무가 좋다. 4. $\phi$ 및 R, $C/_cC$를 감안해서 $2.5\%\~3.5\%$의 유화 고무가 좋다. 5. $5\%이상$의 유화고무는 과유화관계상 좋지 못하다.