• Current Photovoltaic Research
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• 제2권4호
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Composites Research
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• 제31권3호
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• pp.111-116
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• 2018

본 논문에서는 그래핀 표면에 무전해 도금을 통해 FeCoNi 자성 나노입자를 환원 성장시킨 후 이를 다양한 계면 활성제로 분산시켜 고분자 복합필름을 제조하였다. Pyridine 계면 활성제로 분산 시킨 후 제조한 복합필름은 가장 높은 분산성과 낮은 표면저항 값(351 Ohm/sq) 및 10 GHz 주파수에서 90% 이상의 전자파 차폐 능력을 보였다. 특히, 건조과정에서 pyridine의 증발은 내부 전도체 네트워크 형성과 분산성이 높은 필름 형성을 형성 할 수 있는 것으로 확인되었다.

• Korean Chemical Engineering Research
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• 제47권3호
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• pp.332-336
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• 2009

초소형 전자소재 접착용 고분자 소재 접착제는 접착소재와 칩 또는 기판 간의 열팽창계수 차이에 의한 박리, 크래킹과 접착력 부족 등의 문제점이 발생된다. 이러한 결점의 보완을 위하여 무기입자 및 첨가물을 통해 접착제의 열팽창계수를 낮추거나, 접착제의 유연성을 부여하는 방법 등이 사용되고 있다. 실록산/실리카/에폭시 나노복합재에서 실록산과 실리카의 첨가가 열적, 기계적 물성에 미치는 효과를 확인하기 위한 실험을 진행하였다. 3-glycidoxypropyltrimethoxysilane(GPTMS)로 처리하여 친수성의 나노실리카 입자를 소수성 입자로 변성시켜 고분자 매트릭스와의 상용성 문제를 해결하고자 하였다. 표면처리하지 않은 실리카인 $Aerosil^{(R)}$200을 첨가한 AMS/Aerosil/에폭시 나노복합재의 유리전이온도는 125에서 $118^{\circ}C$로 감소하였고, 모듈러스는 2,225에서 2,523 MPa까지 증가하였다. 표면처리한 M-silica를 첨가한 AMS/M-silica/에폭시 나노복합재 또한 비슷한 경향이었으며, 유리전이온도가 124에서 $120^{\circ}C$로 감소했고 모듈러스는 1,981에서 2,743 MPa까지 증가하였다. 실리카의 표면개질 유무에 상관없이 열팽창계수는 감소하는 추세를 보였다.

• 전기화학회지
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• 제17권4호
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• pp.229-236
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• 2014

본 연구에서는 리튬이온 이차전지 양극 활물질로 사용되는 $LiFePO_4$ 활물질을 이용하여 전지를 제조한 후 그 특성들을 평가하였다. 공침법을 이용하여 $FePO_4$ 전구체를 합성한 후 생성된 전구체에 리튬을 합성시키며, 열처리를 통하여 활물질을 생성시킨다. 열처리 온도에 의한 결과 중 $750^{\circ}C$에서의 결과가 가장 우수함을 확인하였으며 전도성을 확보하기 위하여 카본을 코팅하는 방법을 물리적 코팅 방식과 화학적 코팅방법으로 나누어 실험하였으며 물리적 카본 코팅의 결과 6wt%를 코팅했을 때 125 mAh/g의 용량을 보였으며 화학적 코팅에서는 코팅하지 않은 기본 활물질 보다 약 40%의 성능향상을 보여 130~140 mAh/g 대의 활물질 용량을 보였다. 다공성 구조체를 형성하기 위하여 nanocomposite을 투입한 실험에서는 $Al_2O_3$를 첨가한 활물질이 porous 형태의 구조체를 형성하고 $SiO_2$을 첨가한 활물질 보다 132 mAh/g의 용량으로 우수함을 알 수 있었다.

• 공업화학
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• 제22권1호
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• pp.104-108
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• 2011

소형 반도체 접착에 쓰이는 비전도성 고분자 접착제에서 발생하는 문제점으로는 접착소재와 칩 또는 기판 간의 열팽창계수 차이에 의한 박리, 크래킹 및 접착력 부족 등이 있다. 이러한 결점의 보완을 위하여 실리카, 나노클레이 등의 무기입자를 첨가한 고분자 복합소재를 통해 접착제의 열팽창계수를 낮추거나, 접착소재에 유연성 첨가제를 첨가하는 방법 등이 사용되고 있다. 본 연구에서는 양 말단에 아민기를 가지는 아미노 변성 실록산(AMS)을 유연제로 활용하기 위한 실험으로서, 다른 당량을 갖는 두 종류의 AMS의 함량을 1, 3, 5, 7, 9, 10 phr로 변화시켜 AMS/에폭시 복합체를 제조하였다. 그 결과, 당량이 작은 AMS인 KF-8010과 에폭시 복합체의 유리전이 온도는 148에서 $122^{\circ}C$까지, 당량이 큰 AMS인 X-22-161A와 에폭시의 복합체의 유리전이 온도는 148에서 $121^{\circ}C$까지 감소하여 AMS의 당량 변화에 대한 영향이 크지 않음을 확인하였다. KF-8010/에폭시 복합체의 모듈러스는 2648에서 2143 MPa까지 X-22-161A/에폭시 복합체는 2648에서 2015 MPa까지 감소하여 큰 당량의 AMS를 첨가한 에폭시 복합체가 적은당량의 AMS를 첨가한 에폭시 복합체보다 더 큰 폭의 모듈러스 감소율을 확인하였다.