• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.902-906
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• 1999

Electrically conducting composite films were prepared by a vapor phase in situ polymerization of pyrrole in the methyl cellulose film containing a copper(II) perchlorate. Methylcellulose had high affinity to pyrrole and was used as a matrix polymer. Conducting polypyrrole was embedded in the methylcellulose film forming a conducting network and the conductivity of the composite films ranged $10^{-1}$ to $10^{-7}S/cm$. The conductivities of conducting composite films were dependent on the nature of the matrix polymers, concentration of oxidant and polymerization time. In situ polymerization of pyrrole was observed in the matrix polymer and confirmed by UV-vis spectra. From the results of the thermogravimetric analysis, the chemical oxidative polymerization of pyrrole in the matrix polymers did not give any negative effects on the thermal stability of the composite films. Electron micrograph of composites indicated good penetration of PPy in the matrix polymer. DMA suggested a certain degree of incompatibility of the polypyrrole in the composites.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.91-95
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• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.11
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• pp.36-43
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• 2008

In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.164-167
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• 2002

ABS/Polypyrrole composite film has been synthesized by means of electrochemical polymerization in order to enhance the oxidant stability by using ABS(Acrylonitrile-Butadiene-Strene) as a host-polymer. While the acetonitrile as a solvent swells the host-polymer ABS on Pt plate, and then the pyrrole in an electrolyte penetrates the Pre-coated ABS film during electrochemical Polymerization. Comparing with the sin91e-component Polypynole film, the resulting conducting ABS/PPy composite nim shows the good reliability for the uniform resistance and the enhancement of the oxidant stabilization.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.528-531
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• 1994

Digitalization in electronic system is required the capacitor which have a large capacitance with small size, low impedance at high frequency, and high reliability. The fabrication and its properties of aluminum solid electrolytic capacitor are investigated. Employing conduction polymer film such as, polypyrrole as solid electroylte, solid type aluminum electrolytic capacitors were made. The surface of insulationg oxide is covered with conducting polymer layer prepared by chemical oxidative polymerization. Thereafter this conducting layer is covered with conducting polymer prepared by electrochemical polymerization. The dielectric properties of these capacitors were also measured and discussed. Regarding on frequency characteristics of the trial made capacitor, impedance and ESR at high frequency is lower than those of the stacked type film capacitor. It is alo confirmed that temperature coefficient of capacitance and dissipation factor of the capacitor are lower than those of film capacitor and liquid type aluminum electrolytic capacitor.

• Journal of Powder Materials
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• v.25 no.1
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.