• Tribology and Lubricants
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• 제38권1호
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• pp.1-7
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• 2022

Chemical-mechanical polishing (CMP) process is a semiconductor process that planarizes a wafer surface using mechanical friction between a polishing pad and a substrate surface during a specific chemical reaction. During the CMP process, polishing pad conditioning is applied to prevent the rapid degradation of the polishing quality caused by polishing pad glazing through repeated material removal processes. However, during the conditioning process, uneven wear on the polishing pad is inevitable because the disk on which diamond particles are electrodeposited is used. Therefore, the abrasion of the polishing pad should be considered not only for the variables during the conditioning process but also when designing the CMP conditioning system. In this study, three design variables of the conditioning system were analyzed, and the effect on the pad wear profile during conditioning was investigated. The three design variables considered in this study were the length of the conditioner arm, diameter of the conditioner disk, and distance between centers. The Taguchi method was used for the experimental design. The effect of the three design variables on pad wear and uniformity was assessed, and new variables used in conditioning system design were proposed.

• 설비공학논문집
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• 제10권2호
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• pp.227-237
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• 1998

A numerical simulation has been carried out for the automotive air conditioning system. The purpose of this simulation is to present the methods for simulating car air conditioning components, systems and cool-down performance by computerized mathematical model and to analyze the performance of A/C system. In analyzing the heat exchanger(evaporator and condenser), the finite volume model which has a merit in predicting the temperature field in detail because it can consider partial variation of thermal property and heat transfer coefficient is used. In analyzing the compressor, the polytropic approach which regards the actual compression process as a reversible polytropic process is employed. In analyzing vehicle passenger compartment, the thermal network is employed to simulate the car cool down process. This A/C system program can be used for analyzing a component performance when a component is alternated or designed and for analyzing the engine cooling system when A/C system is operated.

• Tribology and Lubricants
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• 제38권4호
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• pp.152-161
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• 2022

Chemical mechanical planarization (CMP) is a technology that planarizes the surfaces of semiconductor devices using chemical reaction and mechanical material removal, and it is an essential process in manufacturing highly integrated semiconductors. In the CMP process, a conditioning process using a diamond conditioner is applied to remove by-products generated during processing and ensure the surface roughness of the CMP pad. In previous studies, prediction of pad wear by CMP conditioning has depended on numerical analysis studies based on mathematical simulation. In this study, using an artificial neural network, the ratio of conditioner coverage to the distance between centers in the conditioning system is input, and the average conditioning density, standard deviation, nonuniformity (NU), and conditioning density distribution are trained as targets. The result of training seems to predict the target data well, although the average conditioning density, standard deviation, and NU in the contact area of wafer and pad and all areas of the pad have some errors. In addition, in the case of NU, the prediction calculated from the training results of the average conditioning density and standard deviation can reduce the error of training compared with the results predicted through training. The results of training on the conditioning density profile generally follow the target data well, confirming that the shape of the conditioning density profile can be predicted.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.569-570
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• 2006

The conditioning process is very important process for the CMP (Chemical Mechaning Polishing). This process regenerates the roughness of the polishing pad during the CMP process, increases the MRR (Material Removal Rate) and gives us longer pad life so conditioning process is essential for the CMP, and conditioning process influences the polishing pad shape gradually. Conditining process is related to the Non-Uniformity. In This paper, Kinematic of the conditioning process and mathematic modeling of the pad wear is studied and result shows how the various parameters influence the pad shape and WIWNU[1]. Consequently through these parameter, optimal design of the conditioning process equipment is predicted.

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.480-487
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• 2022

As a process to improve the insulation performance of VIs (Vacuum Interrupters), AC voltage conditioning is generally adopted by many manufacturers. Although the insulation performance is enhanced easily with AC Voltage conditioning, it has limitations when high recovery voltage is required due to high voltage rate or capacitive current switching. In particular, impurities such as oxides segregated on the electrode surface can be removed not by the energy level of the voltage conditioning but by the higher energy level achieved by the current conditioning process In this article, the current conditioning was carried out in various conditions and its validity was examined. The current conditioning was processed by changing the amplitude of applied current, arc time, the number of tests, and frequency. The insulation performance and the status of contact surface were checked as well. We concluded that as the applied charge quantity and the conditioning coverage area increase, the conditioning effect is much higher.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.51-54
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• 2006

본 연구는 CMP 공정 중의 Conditioning 최적화에 관한 내용이다. CMP Pad Conditioner의 역할은 CMP 공정 중 Slurry 및 연마 잔유물에 의해 Pad 표면에 눈막힘 현상(Glazing)이 발생하여 Wafer의 연마속도가 급속히 저하되는 현상을 방지하여 공정의 안정성을 향상시키는 데 있다. 본 연구 중 Conditioning은 In-situ 방식으로 진행되었으며, Conditioning 비율을 Polishing Time 대비 50%만 진행하여도 연마속도 저하현상은 나타나지 않음을 확인하였다. 이로써 Pad 마모랑 감소 및 Conditioner 교체 주기연장이 가능해져, CMP 공정의 Cost를 절감할 수 있다.

• 동력기계공학회지
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• 제14권6호
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• pp.54-60
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• 2010

The automotive air conditioning hose is used for connecting the components of air conditioner in a vehicle. The hose is usually manufactured by the swaging process to connect the rubber hose with the metal fitting at the end of the hose. The swaging process leads to various stress and strain configurations in the hose, which give a critical effect on the hose performance. In this paper, the deformation characteristics of an air-conditioning hose during the swaging process were analyzed using the nonlinear finite element method. Especially the rubber layers, which are contacted with the metal fittings, were divided with finer mesh density than the reinforcement braids to increase the solution accuracy. The material properties were obtained from experimental data, and the contact conditions were used in consideration of the real manufacturing process.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.270-273
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• 2002

Conditioning은 CMP(Chemical Mechanical Planarization)에 필수적인 공정중의 하나이다. Conditioning의 목적은 removal rate와 uniformity를 CMP 공정 중에서 일정하게 유지시키는데 목적이 있다. 예전의 conditioning disks는 stainless steel substrate 위에 diamond 입자를 올리고 Ni전기도금을 결합시켜서 사용하였다. 그러나, CMP 공정 중에 Ni의분해로 인한 금속의 오염과 diamond abrasive의 분리로 인하여 scratch 문제가 발생하였다. 이 문제를 해결하기 위해서 ceramic substrate와 그것을 정밀 가공하는 기술을 응용함으로써 본래의 conditioning disks가 가지고 있는 diamond 입자의 분리와 metals 분해의 문제를 해결할 수 있게 되었다.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2005년도 하계학술발표대회
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• pp.219-219
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• 2005