• 한국진공학회지
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• 제22권5호
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• pp.225-230
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• 2013

크라이오펌프는 응축과 흡착을 통해 기체를 배기하므로 극저온 표면 온도와 증기압이 배기성능에 큰 영향을 미친다. 어느 부분의 온도가 어중간하면 한번 응축했던 기체분자가 방출과 재응축 또는 재흡착을 반복하여 진공용기 압력이 어느 선 이하로 떨어지지 않고 심한 요동을 나타낸다. 어떤 기체나 특정 온도 범위에서 이런 불안정성이 나타날 수 있지만 크라이오펌프를 많이 사용하는 스퍼터 장치의 공정기체인 알곤을 배기할 때 불안정성이 발생하는 것은 좋지 않다. 본 논문에서는 알곤 회복시간 측정실험을 수행하면서 크라이오펌프의 알곤 불안정성의 원인과 대책을 분석했다.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• 한국대기환경학회지
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• 제18권3호
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• pp.193-204
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• 2002

To investigate the relationships between the atmospheric concentrations of PCBs and temperature, quantity of both parameters was performed at an urban site in Korea from July 1999 to January 2000. The strength of correlations between total PCB and temperature was found to be significant (r = 0.752, p < 0.001). It hence indicates that total PCB contents were affected sensitively by temperature change during the sampling period. The ratio of PCB homologs and Deca-CB(PCB 209) also behaved quite similarly to the change of temperature (r>0.60, p<0.05). This may be inferable with the progress of the gas/particle partitioning to the gas phase, especially for fri-and tetra-CBs. Because they have high vapor pressure, they generally exist in the gas phase. The Clausius-Clapeyron equation was applied to the atmospheric PCB data, relating PCB partial vapor pressure to inverse temperature. This may essentially represent the temperature-controlled transition between condensed phase and atmospheric gas phase. The slopes of the resulting plot with International Council for the Explanation of the Seas (ICES) congener ranged from -2810 to -5887, with significantly steep slope and $R^2$(p< 0.005) It was inferred that the PCB atmospheric concentration was also affected by change in the surrounding conditions such as soil, lakes and trees.

• 한국대기환경학회지
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• 제20권4호
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• pp.493-501
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• 2004

The principle of vortex tube and cyclone was introduced to enhance the treatment efficiency of waste air streams containing particulate matters, toluene, and others developed by Hangreen Tech, Ltd. and Hoseo Chemical and Industrial Technology R＆D Center. Adsorption, condensation, and/or coagulation could be induced at low temperature zone formed by vortex tube and Joule-Thomson expansion. The pressurized air was introduced at the tangential direction into the cyclone system applied with the coaxial funnel tube. Easily condensible vapors such as toluene. carbon dioxide, and water vapor were adsorbed enforcedly on coagulated or condensed materials which were formed as cores for coagulation or condensation by themselves. These types of coagulation or condensation rates were rapidly promoted as the diameter being growing up. The maximum removal efficiency for carbon dioxide and toluene was achieved to about 87 and 90 percent, respectively. The Joule-Thomson coefficients were increased with the pressure of air injected in the range of the relative humidities between 10% and 30%. An optimum value was observed within the range of the tested temperatures at a fixed pressure. In conclusion. it could be identified that the treatment efficiency would be depended on the pressure of the process air introduced and physical and chemical characteristics of waste air streams containing target materials for a designed system. The final design parameters should be decided depending upon the given system and target materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1071-1074
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• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.671-674
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• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.248.2-248.2
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• 2014

In this study, the optical properties and structural characteristics of gallium nitride (GaN) thin films prepared by radio frequency (RF) magnetron sputtering were investigated. Auger electron and X-ray photoelectron spectra showed that the deposited films consisted mainly of gallium and nitrogen. The presence of oxygen was also observed. The optical bandgap of the GaN films was measured to be approximately 3.31 eV. The value of the refractive index of the GaN films was found to be 2.36 at a wavelength of 633 nm. X-ray diffraction data revealed that the crystalline phase of the deposited GaN films changed from wurtzite to zinc-blende phase upon decreasing the sputtering gas pressure. Along with the phase change, a strong dependence of the microstructure of the GaN films on the sputtering gas pressure was also observed. The microstructure of the GaN films changed from a voided columnar structure having a rough surface to an extremely condensed structure with a very smooth surface morphology as the sputtering gas pressure was reduced. The relationship between the phase and microstructure changes in the GaN films will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국유체기계학회 논문집
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• 제12권4호
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• pp.30-36
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• 2009

Recently, there has been growing interest in the oxyfuel combustion cycle since it enables high-purity $CO_2 capture with high$ efficiency. However, the oxyfuel combustion cycle has some important issues regarding to its performance such as the requirement of water recirculation to decrease a turbine inlet temperature and proper combustion to enhance cycle efficiency. Also, Some of water vapour remain not condensed at condenser outlet because cycle working fluid contains non-condensable gas, i.e., $CO_2$. The purpose of the present study is to analyze performance characteristics of the oxyfuel combustion cycle with different turbine inlet temperatures, combustion pressures and condenser pressure. It is expected that increasing the turbine inlet temperature improves cycle efficiency, on the other hand, the combustion pressure has specific value to display highest cycle efficiency. And increasing condensing pressure improves water vapour condensing rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.