• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.32-38
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• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.282-286
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• 2021

Penetration depth and compressive residual stress of laser-carburized TiZrN coating by thickness of carbon paste were investigated in terms of carbon potential. The carbon paste was covered with a thickness of 1.1 mm using screen printing, and applied to a thickness of 0.4 mm using spin coating, and laser carburization was performed under the same conditions. As the thickness of carbon paste increased, the diffraction pattern of the laser-carburized TiZrN coating shifted to a lower angle, indicating solid solution strengthening and lattice distortion. For microstructure analysis using TEM, the defects and carbon concentration of the laser-carburized TiZrN coating increased as the carbon paste was thicker. It indicated that the variation of the carbon potential corresponds to the change in the paste thickness. In XPS depth profile analysis, high concentration of carbon and formation of carbide were observed in laser-carburized TiZrN coating with thick carbon paste. It revealed that the carbon concentration on the surface and carbon potential were changed by the thickness control of carbon paste. The compressive residual stress increased from 3.67 GPa to 4.58 GPa by the variation of carbon concentration.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.6 no.1
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• pp.29-38
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• 1994

Particle contamination into and out of a cavity-cylindrical cavities with aspect ratios(width/depth) less than, equal to 1 and langer than 1, and also three dianensional T's attached to a cylindrical flow tube was studied numerically, using a finite difference method. In the process of unsteady particle diffusion, the particles contained in a concentration boundary layer near the tube wall plays an important role in the initial stage, after which a quasi-steady concentration profile is developed inside the cavity, resulting in an exponential change of concentration with time. Average concentration and its rate of change are observed to be closely correlated by a power law function in terms of Reynolds number and the logarithm of Schmidt number. Effects of the three parameters-Re, Sc, and aspect ratio-are analysed and well explained.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.665-671
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• 1999

The paper represents the effects of the drive-in process parameters on the residual stress profile of the $p^+$ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the $p^+$ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

• Magazine of the Korean Society of Agricultural Engineers
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• v.30 no.4
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• pp.85-93
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• 1988

This laboratory study was carried out in order to produce fundamental data for analyzing salt movement and desalinization effects, using samples of silt loam soil collected in Gyehwado and Daeho reclaimed tidelans, and samples of silty clay loam soil collected in Kimie tideland. Desalinization experiments with gypsum treatment were performed to analyze changes of the hydraulicc conductivity with changes of the soil property and the salt concentration during the desalinization of reclaimed tideland soils by leaching through the subsufface drainage, and correlations between factors infl uencing the reclamation of salt affected soils were analyzed by the statistical method. The results were summarized as follows: 1. The reclaimed tideland soils used in this study were saline-sodic soils with the high exchangeable sodium percentage and the high electrical conductivity. 2. Changes of the hydraulic conductivity with the amount of leaching water and the leaching time elapsed were affected by the amount of gypsum except exchangeable sodium and clay contents. The regression equation between the depth of water leached per unit depth of soil (Dw / Ds : X) or the square root of the leaching time elapsed (T $^1$ $^2$ : X) and the relative hydraulic conductivity (HCr:Y) could be expressed in Y=a . bx. 3. The more exchangeable sodium and clay contents regardless of the amount of gypsum, the more the leaching time was required until a given volume of water was leached through the soil profile. The regression analysis showed that the relationship between the depth of water leached per unit depth of soil(Dw /Ds:X) and the square root of the leaching time elapsed(T$^1$$^2$ :Y) could be described by Y=a . Xb. 4. The hydraulic conductivity was influenced to a major degree by the salt concentration provided that the electrical conductivity was below 10 mmhos / cm during the desalinization of reclaimed tideland soils. The regression equation between the relative electrical conductivity ( ECr : X) and the relative hydraulic conductivity (HCr:Y) could be expressed in Y=a + b . X-$^1$. 5. In conclusion, the hydraulic conductivity, leaching requirements and the leaching time elapsed can be estimated when the salt concentration decreases to a certain level during the desalinization of reclaimed tidelands, and the results may be applied to the analysis of salt movement and desalinization effects.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.46-55
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• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• Ocean and Polar Research
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• v.36 no.1
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• pp.25-37
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• 2014

To understand the degradation processes of organic matter related to sulfate reduction by Sulfate Reduction Bacteria (SRB) in the tidal flat sediments of Hwang-do and Sogeun-ri, Tae-an Peninsula in Chungnam-do, biogeochemical characteristics were analyzed and highlighted using specific microbial biomarkers. The organic geochemical parameters (TOC, ${\delta}^{13}C_{org}$, C/N ratio, long-chain-n-alkane) indicate that most of the organic matter has been derived from marine phytoplankton and bacteria in the fine-grained sediment of Sogeun-ri, although terrestrial plant components have occasionally been incorporated to a significant degree in the coarse-grained sediment of Hwang-do. The concentration of sulfate in pore water is a constant tendency with regard to depth profile, while methane concentration appears to be slightly different with regard to depth profile at the two sites. Especially, the sum of bacteria fatty acid (a-C15:0 + i-C15:0 + C16:1w5) confirms that the these concentrations in Sogeun-ri are related to the degradation of Benzene, Toluene, Ethylbenzene and Xylene (BTEX) compounds from the crude oil retained in the sediments as a result of the Hebei Spirit oil-spill accident in 2007. The methane-related microbial communities as shown by lipid biomarkers (crocetane, PMI) are larger in some sedimentary sections of Hwang-do than in the Sogeunri tidal flat. These findings suggest that methane production by microbiological processes is clearly governed by SRB activity along the vertical succession in organic-enriched tidal flats.