• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 B
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• pp.844-846
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• 1999

A speed signal of governor, which control the output and speed of a generator, is important because a signal failure can be causing the shutdown of a power plant. thus, it is necessary to introduce switching method with two complementary signal. This paper presents a comparative study of speed signal switching methods. One of the Proposed methods has been tested at a power plant in Pukcheju and the approach described here is expected to be of wide applicability.

• 대한전기학회논문지
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• 제33권4호
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• pp.127-133
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• 1984

In this paper the performance of a variable-phase thyristor motor combined with a phase splitter and a single-phase tapped induction motor is investigated. The phase splitter consists of a bridge type thyristor switching circuit. The regulating power flow of the phase splitter is obtained from the switching phase difference of thyristor switching sequences. The proper switching performance improves the torque-speed-characteristics of the motor and its operation efficiency. We simplify the motor system th using the tapped windng reactances of the motor as the complementary element of the thyristor phase splitter. We discussed the practicality of this motor system through the analysis of simulation result and the voltage and the current wave forms obtained froms obtained from the experiment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1220-1222
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• 1995

In the design of a complementary electrochromic windows based on $WO_3/Li^+$ conducting electrolyte/$V_2O_5$ system, a characterization of electrochromic properties of $WO_3/V_2O_5$ complementary devices as a function of thickness combinations is necessary in order to predict such as the safe operating voltage, the optical modulation range and the optical switching response. In this paper, the effects of $WO_3\;and\;V_2O_5$ thin films thickness combinations on device performance were systematically investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.2091-2094
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• 1997

A half-bridge ZVS-PWM converter with complementary switch is described in this paper. Zero Voltage Switching is analyzed taking into account the effect of the leakage inductor of transformer. The main advantages of this converter, that are high efficiency for low output voltage, soft-switching for primary and very small pulsation for DC motor, are shown in a simulation.

• Journal of Power Electronics
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• 제11권6호
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• pp.779-786
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• 2011

This paper presents a soft switching converter to achieve the functions of zero voltage switching (ZVS) turn-on for the power switches and dc voltage step-up. Two circuit modules are connected in parallel in order to achieve load current sharing and to reduce the size of the transformer core. An active snubber is connected between two transformers in order to absorb the energy stored in the leakage and magnetizing inductances and to limit the voltage stresses across the switches. During the commutation stage of the two complementary switches, the output capacitance of the two switches and the leakage inductance of the transformers are resonant. Thus, the power switches can be turned on under ZVS. No output filter inductor is used in the proposed converter and the voltage stresses of the output diodes is clamped to the output voltage. The circuit configuration, the operation principles and the design considerations are presented. Finally, laboratory experiments with a 340W prototype, verifying the effectiveness of the proposed converter, are described.

• 한국표면공학회지
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• 제53권6호
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• 전기전자학회논문지
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• 제18권4호
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• pp.586-592
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• 2014

본 논문에서는 DT-CMOS(Dynamic Threshold voltage Complementary MOSFET) 스위칭 소자를 사용한 DC-DC Buck 컨버터를 제안하였다. 높은 효율을 얻기 위하여 PWM 제어방식을 사용하였으며, 낮은 온 저항을 갖는 DT-CMOS 스위치 소자를 설계하여 도통 손실을 감소시켰다. 제안한 Buck 컨버터는 밴드갭 기준 전압 회로, 삼각파 발생기, 오차 증폭기, 비교기, 보상 회로, PWM 제어 블록으로 구성되어 있다. 삼각파 발생기는 전원전압(3.3V)부터 접지까지 출력 진폭의 범위를 갖는 1.2MHz의 주파수를 생성하며, 비교기는 2단 증폭기로 설계되었다. 그리고 오차 증폭기는 70dB의 이득과 $64^{\circ}$의 위상여유를 갖도록 설계하였다. 또한 제안한 Buck 컨버터는 current-mode PWM 제어회로와 낮은 온 저항을 갖는 스위치를 사용하여 100mA의 출력 전류에서 최대 95%의 효율을 구현하였으며, 1mA 이하의 대기모드에도 높은 효율을 구현하기 위하여 LDO 레귤레이터를 설계하였으며, 또한 2개의 IC 보호 회로를 내장하여 신뢰성을 확보하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제8권1호
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• pp.145-164
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• 2014

Network virtualization provides a promising tool to allow multiple heterogeneous virtual networks to run on a shared substrate network simultaneously. A long-standing challenge in network virtualization is the Virtual Network Embedding (VNE) problem: how to embed virtual networks onto specific physical nodes and links in the substrate network effectively. Recent research presents several heuristic algorithms that only consider single topological attribute of networks, which may lead to decreased utilization of resources. In this paper, we introduce six complementary characteristics that reflect different topological attributes, and propose three topology-aware VNE algorithms by leveraging the respective advantages of different characteristics. In addition, a new KS-core decomposition algorithm based on two characteristics is devised to better disentangle the hierarchical topological structure of virtual networks. Due to the overall consideration of topological attributes of substrate and virtual networks by using multiple characteristics, our study better coordinates node and link embedding. Extensive simulations demonstrate that our proposed algorithms improve the long-term average revenue, acceptance ratio, and revenue/cost ratio compared to previous algorithms.