• Title/Summary/Keyword: Columnar Structure

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Histochemical and Ultrastructural Studies on the Salivary Gland of a Land Snail, Nesiohelix samarangae (동양달팽이 (Nesiohelix samarangae) 타액선의 조직화학적 및 미세구조적 연구)

  • Lee, Yong-Seok;Kang, Bo-Ra;Shin, Hui-Jin;Jeong, Kye-Heon
    • The Korean Journal of Malacology
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    • v.20 no.1
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    • pp.7-16
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    • 2004
  • Histochemical and ultrastructural studies on the salivary gland and salivary duct of a land snail Nesiohelix samarangae were conducted to observe structural characteristics and function. The salivary gland consisted of one type of epithelial cell, one type of supporting cell, and six types of gland cells. Four out of six gland cell types were histochemically identified on these secretions. The one secreted acid mucopolysaccharide and the other three secreted neutral mucopolysaccharide. The salivary duct epithelium had only one type of columnar cell with microvilli on its luminal surface. The basal protoplasmic membranes of the epithelial cells were deeply infolded so many times all along the cell bases.

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A Study on Cleaning Processes for Ti/TiN Scales on Semiconductor Equipment Parts (반도체 장비 부품의 Ti/TiN 흡착물 세정 공정 연구)

  • 유정주;배규식
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.2
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    • pp.11-15
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    • 2004
  • Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

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Microstructures of Anatase TiO$_2$ Thin Films by Reactive Sputtering (반응성 스퍼터링법으로 제조된 anatase TiO$_2$박막의 미세조직에 관한 연구)

  • Choe, Yong-Rak;Kim, Seon-Hwa;Lee, Geon-Hwan
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.751-758
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    • 2001
  • Anatase $TiO_2$ thin films as a photocatalyst were prepared by the D.C reactive magnetron sputtering process. The $TiO_2$ thin films were deposited on Si(100) substrates under the various conditions : oxygen partial pressure, working pressure, substrate temperature, D.C power, and deposition time. The morphology of the TiO$_2$ thin films showed an island structure. At early stages of film growth, amorphous phase formed. However, during the further growth, columnar crystalline $TiO_2$grains evolved. The crystallinity of the thin films depended on the oxygen partial pressure, the working pressure and the D.C. powers.

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Microsturctures of copper thin films sputtered onto polyimide (폴리이미드 위에 스퍼터 증착된 구리 박막의 미세구조)

  • Chung, Tae-Gyeong;Kim, Young-Ho;Yu, Jin
    • Journal of the Korean institute of surface engineering
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    • v.25 no.2
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    • pp.90-96
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    • 1992
  • Thed effects of sputter gas pressure and substrate surface micro-roughness on the microstructure and surface topography have been investigated in the Cu thin films sputter deposited onto polyimide substrates. The surface roughness of polyimide was controlled by oxygen rf plasma treatment. In the Cu film deposited at the pressure of 5 mtorr, the surface is smooth and the columnar structure is not visible regardless of polyimide surface more open boundaries. The polyimide surface roughness enhances these effects, These phenomena can be explained in therm of atomic shadowing effect.

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A Study on the Deposition Characteristics of ZnO Piezoelectric Thin film Bulk Acoustic Resonator (FBAR 응용을 위한 ZnO 압전 박막의 증착 특성에 관한 연구)

  • 최승혁;김종성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.716-722
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    • 2003
  • ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

A Study on the Deteriorated Cause Analysis of Mold Type Potential Transformer (몰드형 계기용 변압기의 소손원인 해석에 관한 연구)

  • Choi, Chung-Seog;Kim, Hyug-Soo;Shong, Kil-Mok;Kim, Hyung-Rae;Lee, Duck-Chool
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1557-1559
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    • 2000
  • In this paper, we intend to establish the judgement of electrical fire through analysis of PT(Potential Transformer) using the power installation. The columnar structure and the void generated by abrupt heat grew at the tenter of boundary-face on the metallurgical microscope analysis. The detection of OK lines was confirmed by EDX(Energy Dispersive X-ray spectroscopy) as melting and recombination due to the layer-short of the wiring. We found that the thermal-weight decrease occurred at 300$^{\circ}C$ in case of being the thermal-deterioration on the base of the result that analyzed the insulated-materials by using TGA, and the thermal reaction limited-value of PT insulator was about 300$^{\circ}C$ on the DSC curve. As this analysis, we confirmed what the layer-short appeared in the wiring of PT.

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Properties of ZnO:Ga Thin Films Deposited by RF Magnetron Sputtering with Ar Gas Flows (RF 마그네트론 스퍼터링법으로 제조한 GZO 박막의 Ar 유량에 따른 특성)

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.450-453
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    • 2020
  • In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

INVESTIGATION ON THE CORROSION BEHAVIOR OF HAHA-4 CLADDING BY OXIDE CHARACTERIZATION

  • Park, Jeong-Yong;Choi, Byung-Kwon;Jeong, Yong-Hwan
    • Nuclear Engineering and Technology
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    • v.41 no.2
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    • pp.149-154
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    • 2009
  • The microstructure, the corrosion behavior and the oxide properties were examined for Zr-1.5Nb-0.4Sn-0.2Fe-0.1Cr (HANA-4) alloys which were subjected to two different final annealing temperatures: $470^{\circ}C$ and $570^{\circ}C$. HANA-4 was shown to have $\ss$-enriched phase with a bcc crystal structure and Zr(Nb,Fe,Cr)$_2$ with a hcp crystal structure with $\ss$-enriched phase being more frequently observed compared with Zr(Nb,Fe,Cr)$_2$. The corrosion rate of HANA-4 was increased with an increase of the final annealing temperature in the PWR-simulating loop, $360^{\circ}C$ pure water and $400^{\circ}C$ steam conditions, which was correlated well with a reduction in the size of the columnar grains in the oxide/metal interface region. The oxide growth rate of HANA-4 was considerably affected by the alloy microstructure determined by the final annealing temperature.

Growth of Highly (100) Oriented (Na0.5Bi0.5)TiO3 Thin Films on LaNiO3 Electrode (LaNiO3 전극위에 (100)으로 배향된 (Na0.5Bi0.5)TiO3 박막의 성장)

  • Yoo Young-Bae;Park Min-Seok;Son Se-mo;Chung Su-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.176-180
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    • 2006
  • [ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation (ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구)

  • Lee, Soon-Bum;Park, Sung-Hyun;Kwon, Sang-Jik;Lee, Neung-Heon;Shin, Young-Hwa
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.249-250
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    • 2006
  • In this study, we tried to Improve c-axis orientation of ZnO thin films used in a piezoelectric layer of FBAR devices. First. ZnO deposition conditions were determined by changing various conditions of RF sputter such as RF power, pressure and $O_2$ contents. The Piezoelectric layer was deposited on ZnO buffer layer of dense structure which was formed by ALD equipment. The c-axis orientation of ZnO piezoelectric layer was measured by XRD and we confirmed fine Grains and columnar structure by SEM, AFM.

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