• 전기학회논문지
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• 제59권12호
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• pp.2273-2277
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• 2010

In this paper a 2.4GHz CMOS colpitts type microwave oscillator was designed and fabricated using H-spice and Cadence Spetre. There are 140MHz difference between the oscillation frequency and the resonance frequency of a tank circuit of the designed oscillator. The difference is seemed to be due to the parasitic component of the transistor. The inductors used in this design are the spiral inductors proposed in other papers. Cascode current source was used as a bias circuit of a oscillator and the output transistor of the current source is used as the oscillation transistor. A common drain buffer amplifier was used at the output of the oscillator. The measured oscillation frequency and output power of the oscillator are 2.173GHz and -5.53dBm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1125-1128
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• 2003

This paper presents the design method of a Colpitts type oscillator with coplanar waveguide(CPW) structures in the range of Ka-band frequency for transmitter and receiver modules. Series short stubs of CPW patterns provide inductances and capacitances in the range of Ka-band which can be expressed as a CLC-$\pi$ equivalent circuit. The experimentation has employed ro4003 substrates as a CPW substrate which has a dielectric constant of 3.38 and a signal and ground space of 100um. A method of momentum simulation for the CPW patterns has performed with an ADS software tool of Hewlett-Packard Corp. Inductance and capacitance circuits of a Colpitts oscillator was interconnected to a MESFET with CPW bend structures of including the input and output impedance matching circuits of the active transistor. Circuit parameters for impedance matching were determined through the network conversion to the equivalent length of CPW transmission lines by using T-network 1 $\pi$-network conversion circuit. A Colpitts oscillator was fabricated on the substrate of a area of 8.5mm x 17.4mm with a MESFET of Fujitsu FMM5704X and CPW series short stubs. The design suggested the possibility of realizing oscillators on a planar surface for the wireless system of tansmitter and receiver modules in the frequency range of 30GHz

• Journal of electromagnetic engineering and science
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• 제7권2호
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• 한국통신학회논문지
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• 제19권12호
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• pp.2439-2447
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• 1994

Colpitts VOC(Voltage Controlled Oscillator)의 새로운 모델링을 제시하였다. 일반적으로 VOC의 해석에는 2차원 모델이 사용되고 있는데 본 논문에서는 3차원 모델을 사용하였다. 이는 수학적으로 정확함은 물론 실제적으로도 유용하게 사용할 수 있다. 이러한 잇점은 실제의 VOC는 콜피츠 발진회로에 기초한 것이며 이는 3차원 시스템이기 때문이다. 모델링은 선형 근사법으로 시작하여 HBM(harmonic balance method)에 의하여 비선형 해석으로 접근하였다. 이 해석에서는 시스템의 출력에 영향을 주는 발진과 함께, 겹쳐서 나타나는 시프팅 바이어스라는 새로운 모드의 존재를 드러내었다. 더우기 해석의 성과는 발진 주파수의 변화를 시도하고자 할 때 발진기의 피라미터를 변화시키는 유용한 과정을 추출하였다. 시뮬레이션으로 이를 확인하고 개인용 휴대전화기에 사용될 GaAs MESFET VCO 실제회로에 적용시켜 본 결과 매우 잘 일치하였다.

• Journal of electromagnetic engineering and science
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• 제16권4호
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• pp.229-231
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• 2016

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

• 한국전자통신학회논문지
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• 제6권1호
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• pp.7-12
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• 2011

본 논문은 1 V 미만의 전원 전압에서 저 위상잡음을 갖는 발진 신호의 발생에 적합한 차동 콜피츠 전압제어 발진기 (VCO: Voltage Controlled Oscillator) 회로를 제안한다. 제안된 회로는 전류원으로 인덕터를 사용함으로써 1 V 미만의 전원 전압에서 저 위상잡음의 발진을 보다 용이하게 한다. 공진기 손실을 보다 줄이기 위하여 단일 콜피츠 발진기의 두 개의 궤환 커패시터 중의 하나를 바렉터 (varactor)로 대체하였다. $0.18{\mu}m$ RF CMOS 기술을 사용하는 포스트 레이아웃 (post-layout) 시뮬레이션 결과는 0.6 V에서 0.9 V 사이의 전원 전압에서 제안된 회로가 1MHz 오프셋 주파수에서 나타내는 위상잡음은 널리 알려진 교차 결합 전압제어 발진기의 위상잡음보다 적어도 7 dBc/Hz 이상 낮음을 보여준다.

• 전기전자학회논문지
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• 제11권3호
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• pp.122-128
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• 2007

Sinusoidal voltage-controlled oscillators (VCOs) based on Colpitts and Hartley oscillators are presented. They consist of a LC parallel-tuned circuit connected in a negative-feedback loop with an OTA-R amplifier and two diode limiters, where the inductor is simulated one realized with temperature-stable linear operational transconductance amplifiers (OTAs) and a grounded capacitor. Prototype VCOs are built with discrete components. The Colpitts VCO exhibits less than 1% nonlinearity in its current-to-frequency transfer characteristic from 4.2 to 21.7 MHz and ${\pm}$95 ppm/$^{\circ}C$ temperature drift of frequency over 0 to $70^{\circ}C$. The total harmonic distortion (THD) is as low as 2.92% with a peak-to-peak amplitude of 0.7 V for a frequency-tuning range of 10.8-32 MHz. The Hartley VCO has the temperature drift and THD of two times higher than those of the Colpitts VCO.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.770-773
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• 2002

Two sinusoidal voltage-controlled oscillators using linear operational transconductance amplifiers are presented in this paper: One is based on the positive-feedback bandpass oscillator model and the other on the negative-feedback Colpitts model. The bandpass VCO consists of a noninverting amplifier and a current-controlled LC-tuned circuit which is realized by two linear OTA's and two grounded capacitors, while the Colpitts VCO consists of an inverting amplifier and a current-controlled LC-tuned circuit realized by three linear OTA's and three grounded capacitors. Prototype circuits have been built with discrete components. The experimental results have shown that the Colpitts VCO has a linearity error of less than 5 percent, a temperature coefficient of less than rm 100 ppm/$^{circ}C$, and a $pm1.5 Hz $frequency drift over an oscillation frequency range from 712Hz to 6.3kHz. A total harmonic distortion of 0.3 percent has been measured for a 3.3kHz oscillation and the corresponding peak-to-peak amplitude was 1V. The experimental results for bandpass VCO are also presented.

• 한국컴퓨터정보학회논문지
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• 제7권3호
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• pp.109-114
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• 2002

본 연구에서는 기존의 Colpitts VCO에서 바이어스 저항에 의한 성능 저하문제를 간단한 트랜지스터의 모델을 사용하여 분석하고, 발진기의 성능을 저하시키는 바이어스 저항의 영향을 제거하는 새로운 구조를 제시한다. 또한 이를 이용하여 차세대 이동통신용 소형, 저 전력 VCO를 설계하고 제작하였다.

• 전기전자학회논문지
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• 제18권4호
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• pp.625-629
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• 2014

본 연구에서는 컬러잡음에 의해서 교란되는 발진기의 점근적 위상잡음 공식을 유도하고 이에 근거하여 1/4 파장 마이크로스트립 라인을 전류원으로 갖는 서브-1V 직렬공진 차동 콜피츠 전압제어 발진기를 제안한다. 위상잡음에 관한 ADS 시뮬레이션 결과는 제안된 전압제어 발진기가 기존의 인덕터를 전류원으로 갖는 서브-1V 직렬공진 차동 콜피츠 전압제어 발진기보다 4.8GHz 발진주파수의 1MHz 오프셋 주파수에서 약 3dBc/Hz 더 낮은 위상잡음을 나타냄을 보인다.