• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.448-454
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• 2001

Low field electron emission from novel carbon based cold cathodes is reported. The cathodes consisted of a layer of nanoseeded diamond and an over layer of nanocluster carbon films. The nanoseeded diamond was first coated on to thesubstrate. The nanocluster carbon films were then deposited on the nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. The heterostructured microcathodes were observed to exhibit electron emission currents of 1 $\mu$A/cm$^2$ at fields as low as 1.5 to 2V/$\mu$m. The effect of the nanoseeded diamond size and concentration and the properties of different nanocluster carbon films on emission characteristics is presented.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.277-280
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• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.852-854
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• 2003

CNT paste was fabricated by mixture of multi-walled carbon nanotubes (MWNT) powder, organic vehicles and inorganic binder. Then firing process was performed at different temperature under air and $N_{2}$ atmosphere. It was found that emission property of CNT paste was changed by firing temperature and time due to interaction between remained resins and CNT powder. We obtained good emission property from CNT paste treated at $350^{\circ}C$ for 10 min.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.69.2-69.2
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• 2010

The far-ultraviolet (FUV) H2 and C IV emission images and spectra of Orion Eridanus Superbubble (OES) is hereby presented. The OES seems to consists of multiple phase through the detection of highly-ionized gas and pervasive neutral hydrogen. The former is traced by hot gas while the latter is traced by cold medium. A spectral image made with H2 fluorescent emission shows that the spatial distribution of hydrogen molecule is well correlated with the dust map. The model spectra was taken from a photodissociation region (PDR) radiation code which find a best suitable parameter such as hydrogen density, gas temperature and incident uv intensity of the radiation field. C IV emission is caused by intermediate temperature ISM about 10^4.5 K~10^6 K. Therefore we could get more clear evidence to reveal the structure of OES. Feature of spectra for the each sub region is also presented and discussed. The data were obtained with the Far-Ultraviolet Imaging Spectrograph (FIMS) and the whole data handling were followed by previous FIMS analysis.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.71.1-71.1
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• 2010

The far-ultraviolet (FUV) C IV and H2 emission spectra of Orion-Eridanus Superbubble (OES) is hereby presented. The OES seems to consist of multiple phase through the detection of highly-ionized gas and pervasive neutral hydrogen. The former is traced by hot gas while the latter is traced by cold medium. A spectral image made with H2 fluorescent emission shows that the spatial distribution of hydrogen molecule is well correlated with the dust map. The model spectra was taken from a photodissociation region (PDR) radiation code which finds a best suitable parameter such as hydrogen density and intensity of the radiation field. C IV emission is caused by intermediate temperature ISM about 10^5 K. Therefore we could get more clear evidence to reveal the morphology of OES. In this process, the hydrogen density and gas temperature were also estimated. The data were obtained with the Far-Ultraviolet Imaging Spectrograph (FIMS) and the whole data handling were followed by previous FIMS analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1035-1038
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• 2002

The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

• Elastomers and Composites
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• v.53 no.4
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• pp.202-206
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• 2018

Five solution styrene butadiene rubber/neodymium butadiene rubber (SSBR/NdBR) composites were manufactured using different ratios of SSBR and NdBR. In this study, the composites were reinforced with NdBR and silica to confirm the physical properties of SSBR used for treads of automobile tires and the dispersibility with silica. The morphologies of the rubber composites were observed using field-emission scanning electron microscopy (FE-SEM). The crosslinking behaviors of the composites were tested using a rubber process analyzer (RPA), and the abrasion resistances were tested using a National Bureau of Standards (NBS) abrasion tester. The hardness values, tensile strengths, and cold resistances of the composites were also tested according to ASTM standards. Increased NdBR content yielded composites with excellent crosslinking properties, abrasion resistances, hardnesses, tensile strengths, and cold resistances. The crosslinking point increased due to the double bond in NdBR, thereby increasing the degree of crosslinking in the composites. The NdBR-reinforced composites exhibited excellent abrasion resistances, which is explained as follows. In SSBR, a breakage is permanent because a resonance structure between styrene and SSBR forms when the molecular backbone is broken during the abrasion process. However, NdBR forms an additional crosslink due to the breakdown of the molecular backbone and high reactivity of the radicals produced. In addition, the low glass transition temperature (Tg) of NdBR provided the rubber composites with excellent cold resistances.