• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Geomechanics and Engineering
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• v.36 no.6
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• pp.631-640
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• 2024

In the traditional slope stability analysis, ignoring the spatial variability of slope soil will lead to inaccurate analysis. In this paper, the K-L series expansion method is adopted to simulate random field of soil strength parameters. Based on Random Limit Equilibrium Method (RLEM), the influence of variation coefficient and fluctuation range on reliability of soil slope supported by micro-pile is investigated. The results show that the fluctuation ranges and the variation coefficients significantly influence the failure probability of soil slope supported by micro-pile. With the increase of fluctuation range of soil strength parameters, the mean safety factor of the slope increases slightly. The failure probability of the soil slope increases with the increase of fluctuation range when the mean safety factor of the slope is greater than 1. The failure probability of the slope increases by nearly 8.5% when the fluctuation range is increased from δ_v=2 m to δ_v =8 m. With the increase of the variation coefficient of soil strength parameters, the mean safety factor of the slope decreases slightly, and the probability of failure of soil slope increases accordingly. The failure probability of the slope increases by nearly 31% when the variation coefficient increases from COV_c=0.2, COV_φ=0.05 to COV_c=0.5, COV_φ=0.2.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.27 no.1
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• pp.99-106
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• 1997

The purpose of this study was to compare & to find out the variability of head film measurements (and marks identification) between Fuji computed radiographic cephalometry and conventional cephalometry. 28 Korean adults were selected. Lateral cephalometric FCR film and conventional cephalometric film of each subject was taken. Four investigators identified 24 cephalometric landmarks on lateral cephalometric FCR film and conventional cephalometric film. The comparable measurements between lateral cephalometric FCR film and conventional cephalometric film were statistically analysed. The results were as follows : 1. In FCR film & conventional film, coefficient of variation (C.V.) of 24 landmarks was taken horizonta1ly & vertically. There is no significant difference of rank order of landmarks in C.V. between two films. 2. In comparison of significant differences of landmarks variability between FCR film & conventional film, horizontal value of coefficient of variation, showed significant differences in four landmarks among twenty-four landmarks, but vertical value of coefficient of variation showed significant differences in sixteen landmarks among twenty-four landmarks. FCR film showed significantly less variability than conventional film in 17 subjects among 20(4+16) subjects that showed significant difference.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.79-85
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• 2009

In this paper, an accurate current reference using temperature and process compensation current mirror (TPC-CM) is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature (PTAT) current and a complementary to absolute temperature (CTAT) current. However, the temperature coefficient and magnitude of the reference current are influenced by the process variation. To calibrate the process variation, the proposed TPC-CM uses two binary weighted current mirrors which control the temperature coefficient and magnitude of the reference current. After the PTAT and CTAT current is measured, the switch codes of the TPC-CM is fixed in order that the magnitude of reference current is independent to temperature. And, the codes are stored in the non-volatile memory. In the simulation, the effect of the process variation is reduced to 0.52% from 19.7% after the calibration using a TPC-CM in chip-by-chip. A current reference chip is fabricated with a 3.3V 0.35um CMOS process. The measured calibrated reference current has 0.42% variation for $20^{\circ}$C${\sim}$100$^{\circ}$C.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• Plant Resources
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• v.6 no.3
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• pp.178-182
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• 2003

This study was conducted to investigate the relationship between yearly variations of climatic elements and yearly variations of productivity in perilla. In addition, correlation coefficients among yield and yield components were estimated. The data of yield and yield components were investigated for 10 years from 1991 to 2000. The meteorological data gathered at the Yeosu Weather Station for the same period were used to find out the relationships between climatic elements and productivity. Yearly variation of the amount of precipitation in September was large with coefficients of variation(c. v.) of 11.1%, but the coefficient of variance(c. v.) in July and August were relative small with 1.8, 2.1%, respectively. Number of cluster per hill and weight of 1,000 grains were greatly with c. v. of 76.1, 79.3%, respectively, but the coefficients of variance(c. v.) of plant height and seed yield were more less with 9.58, 10.60%, respectively. Correlation coefficients between precipitation of September and seed yield were positively significant correlation at the level of 5.1%, respectively, but the duration of sunshine in September and seed yield were negatively significant at the level of 5.1%, respectively. Correlation coefficients of these, the plant height, number of branches per plant, cluster length, number of cluster per hill, weight of 1,000 grains and seed yield were positively significant at the level of 5.1% respectively.

• Magazine of the Korean Society of Agricultural Engineers
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• v.38 no.5
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• pp.125-139
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• 1996

This study was performed to provide the design method for soil structure which guarantees proper safety with uncertainty of soil parameters. For this purpose, the effect of uncertainty of soil parameters for slope stability was analyzed by Bishop's simplified method and Monte Carlo simulation(MC). And reliability analysis program, RESFEM, was developed by combining elastic theory, MC, FEM, SFEM, and reliability, which can consider uncertainty of soil parameters. For factor of safety(FS) 1.0 and 1.2 by Bishop's simplified method, the probability of failure(Pf) was analyzed with varying coefficient of variation(c.o.v.) of soil parameters. The Pf increased as c.o.v. of soil parameters increased. This implies that FS is not the absolute index of slope safety, and even if FS is same, it has different Pf according to c.o.v. of soil parameters. The RESFEM was able to express the Pf at each element in slope quantitatively according to uncertainty of soil parameters. The variation of Pf with uncertainty of soil parameters was analyzed by RESFEM, and it was shown that the Pf increased as the c.o.v. of soil parameters increased.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.9
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• pp.49-56
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• 1998

In this paper, a design of bias circuit in temperature independent voltage detect circuit is proposed. In order to realize this intention, we are used the differences in temperature coefficient of thermal voltage, resistor and transistor forward voltage(V$\sub$BE/) which is consisted in comparator. That is, It is realized by compensating the difference of temperature coefficient due to using components with each different temperature coefficient. As well, reference voltage of the circuit is accomplished by the difference of transistor forward voltage($\Delta$V$\sub$BE/) in comparator. In using reference voltage, resistor and V$\sub$BE/ Multiplier, we can design detect voltage of the circuit. In order to test operation of proposing circuit, we manufactured IC. Then, we measured operating characteristics and capability of the circuit by using HP4145B and temperature chamber. The result, we could obtain the good variation of temperature from -0.01 %/$^{\circ}C$ to -0.025 %/$^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.1-8
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• 2009

In this paper, a temperature variation-insensitive power-up detector for use in analog and digital integrated systems has been proposed. To provide temperature-insensitive characteristic, nMOS and pMOS voltage dividers in the proposed power-up detector are made to have zero temperature coefficient by exploiting the fact that the effective gate-source voltage of a MOS transistor can result in mutual compensation of mobility and threshold voltage for temperature independency. Comparison results using a 68-nm CMOS process indicate that the proposed power-up detector achieves as small as 4 mV voltage variation at 1.0 V power-up voltage over a temperature range of $-30^{\circ}C$ to $90^{\circ}C$, resulting in 92.6% reduction on power-up voltage variations over conventional power-up detectors.