• Title/Summary/Keyword: Codoped

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Effects of Substrate and Annealing Temperatures on the Properties of SrWO4:Dy3+, Eu3+ Phosphor Thin Films (기판 및 열처리 온도에 따른 SrWO4:Dy3+, Eu3+ 형광체 박막의 특성)

  • Kim, Jungyun;Cho, Shinho
    • Korean Journal of Materials Research
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    • v.26 no.10
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    • pp.577-582
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    • 2016
  • $Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

Defect Chemistry of Ca and Nb doped $BaTiO_3$ (Ca와 Nb가 첨가된 $BaTiO_3$의 결함화학)

  • Jeong, Jae-Ho;Han, Yeong-Ho;Park, Sun-Ja
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.798-807
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    • 1994
  • The increase in the resistance of $BaTio_{3}$ with addition of Ca is attributed to the formation ofthe acceptor impurity by $CaCa^{2+}$" which substitutes Ti4+. However, some authors suggested that $Ca^{2+}$ can not substitute $Ti^{4+}$ because of its larger ionic radius. In this work, the existence of acceptor by Ca hasbeen studied through the high temperature equilibrium electrical conductivity of $BaTiO_{3}$ codoped with Caand Nb, where Ba/(Ti+Ca+Nb) was kept equal to unity. It was measured at $1000^{\circ}C$, and the oxygenpartial pressure was controlled between $10^{-15}$ ~ 1 atm. Changing the amount of added Ca and Nbresulted in the compensation effect between donor and acceptor, i.e., Nb was compensated by the acceptor.And through the defect chemical interpretation of the measured data, it was concluded that Ti canbe substitued with Ca. The existence of such acceptor was reaffirmated by ICTS(Isotherma1 CapacitanceTransient Spectroscopy) measurements.oscopy) measurements.

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Luminescent Properties and Energy Transfer Efficiency of BaWO4:Dy3+, Eu3+ White Light-Emitting Phosphors (BaWO4:Dy3+,Eu3+ 백색광 형광체의 발광 특성과 에너지 전달 효율)

  • Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.54 no.3
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    • pp.112-118
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    • 2021
  • Dy3+- and Eu3+-codoped BaWO4 phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO4:Dy3+,Eu3+ phosphors were investigated as a function of Eu3+ concentration at a fixed concentration of Dy3+ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy3+ and Eu3+ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO4:Dy3+,Eu3+ phosphors synthesized with 1 mol% of Eu3+, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the 4F9/26H15/2 and 4F9/26H13/2 transitions of Dy3+ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu3+ ions. As the concentration of Eu3+ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy3+ to Eu3+ ions was 95.3% at 20 mol% of Eu3+. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy3+ and 1 mol% of Eu3+.

A study of defect structures in $LiNbO_{3}$ single crystals by optical absorptions (광흡수에 의한 $LiNbO_{3}$ 단결정의 결함 구조 연구)

  • 김상수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.327-340
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    • 1996
  • In this study, a series of $LiNbO_{3}$ crystals with different [Li]/[Nb] ratios, congruent $LiNbO_{3}$ crystals with doped Mg and with Mg and codoped with Mn were grown by the Czocharalski method. These were investigated by UV and IR spectrophotometry. Stoichiometry dependences of the UV absorption edge and the $OH^{-}$ absorption spectra were studied with different [Li]/[Nb] ratios. The position of the UV absorption edge adn the shape and peak point of the $OH^{-}$ absorption spectra changed monotonously upto a critical concentration of Mg ions. The mechanism of the incorporation of Mg ions changes at this concentration. The decomposition of the $OH^{-}$ absorption spectra using a Gaussian lineshape function showed that in Li-deficient crystals the absorption spectra consist of five components in contrast to more or less perfect stoichiometric crystals which reveal to three components. On the basis of these results, the intrinsic and the extrinsic defect structure models in $LiNbO_{3}$ crystals were examined. The behaviour of $\nu$ (OH) reflects the defect structure and supports the Li-site vacancy model as the intrinsic defect structure model and the corresponding extrinsic defect model. A brief discussion is also given of the behaviour of $\nu$ (OH) in $LiNbO_{3}$ crystals simultaneously doped with several kinds of impurity.

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Structural and Luminescent Properties of Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) Phosphors for White Light Emitting Devices (백색광 소자 응용을 위한 Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) 형광체의 구조 및 발광 특성)

  • Park, Giwon;Jung, Jaeyong;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.53 no.4
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    • pp.131-137
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    • 2020
  • A series of Dy3+, Sm3+, and Dy3+/Sm3+ doped Gd2WO6 phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd2WO6 crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy3+-doped Gd2WO6 phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm3+-doped Gd2WO6 phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the 6G5/26H5/2, 6G5/26H9/2, and 6G5/26H11/2 transitions of Sm3+, respectively. The PL emission spectra of the Dy3+- and Sm3+-codoped Gd2WO6 phosphors showed the blue and yellow emission lines originating from the 4F9/26H15/2 and 4F9/24H13/2 transitions of Dy3+ and reddish-orange and red emission bands due to the 4G5/26H7/2 and 4G5/26H9/2 transitions of Sm3+. As the concentration of Sm3+ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy3+ ions gradually decreased, while those of the three emission bands due to the Sm3+ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd2WO6:5 mol% Dy3+, 1 mol% Sm3+ phosphors were (0.406, 0.407), which was located in the warm white light region.

Growth and defect structures of undoped and heavily MgO-doped LiNbO3 single crystals (Undoped and heavily MgO-doped $LiNbO_3$ 결정의 성장 및 결함구조)

  • 김상수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.5
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    • pp.447-453
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    • 1999
  • Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

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Photoluminescence Properties of CaNb2O6:RE3+ (RE = Dy, Eu, Dy/Eu) Phosphors (CaNb2O6:RE3+ (RE = Dy, Eu, Dy/Eu) 형광체의 발광 특성)

  • Cho, Hyungchel;Cho, Shinho
    • Korean Journal of Materials Research
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    • v.27 no.6
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    • pp.339-344
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    • 2017
  • A series of $CaNb_2O_6:Dy^{3+}$, $CaNb_2O_6$:$Eu^{3+}$ and $CaNb_2O_6:Dy^{3+}$, $Eu^{3+}$ phosphors were prepared by solid-state reaction process. The effects of activator ions on the structural, morphological and optical properties of the phosphor particles were investigated. XRD patterns showed that all the phosphors had an orthorhombic system with a main (131) diffraction peak. For the $Dy^{3+}$-doped $CaNb_2O_6$ phosphor powders, the excitation spectra consisted of one broad band centered at 267 nm in the range of 210-310 nm and three weak peaks; the main emission band showed an intense yellow band at 575 nm that corresponded to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions. For the $Eu^{3+}$-doped $CaNb_2O_6$ phosphor, the emission spectra under ultraviolet excitation at 263 nm exhibited one strong reddish-orange band centered at 612 nm and four weak bands at 536, 593, 650, and 705 nm. For the $Dy^{3+}$ and $Eu^{3+}$-codoped $CaNb_2O_6$ phosphor powders, blue and yellow emission bands due to the $^4F_{9/2}{\rightarrow}^6H_{15/2}$ and $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transitions of $Dy^{3+}$ ions and a main reddish-orange emission line at 612 nm resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. As the concentration of $Eu^{3+}$ ions increased from 1 mol% to 10 mol%, the intensities of the emissions due to $Dy^{3+}$ ions rapidly decreased, while those of the emission bands originating from the $Eu^{3+}$ ions gradually increased, reached maxima at 10 mol%, and then slightly decreased at 15 mol% of $Eu^{3+}$. These results indicate that white light emission can be achieved by modulating the concentrations of the $Eu^{3+}$ ions incorporated into the $Dy^{3+}$-doped $CaNb_2O_6$ host lattice.

An Investigation of Electrical Properties in Cation-anion Codoped ZnO by Atomic Layer Deposition (원자층 증착법 기반 양이온-음이온 이중 도핑 효과에 따른 ZnO 박막의 전기적 특성 비교 연구)

  • Dong-eun Kim;Geonwoo Kim;Kyung-Mun Kang;Akendra Singh Chabungbam;Hyung-Ho Park
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.94-101
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    • 2023
  • Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.