• 한국재료학회:학술대회논문집
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• 한국재료학회 2004년도 춘계학술발표대회 및 제6회 신소재 심포지엄
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• pp.66-66
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• 2004

• Journal of the Optical Society of Korea
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• 제1권1호
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• pp.5-9
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• 1997

Energy transfer direction in $Er^{3+}-Tm^{3+}$-codoped fluorozirconate glasses has been studied. For $Er^{3+}-Tm^{3+}$-codoped glasses, the dependence of the green emission intensity on the pump power (Pex) of 800 nm has ranged from (Pex)$^2$ to (Pex)$^3$. From this multistep absorption, a 1.48 $\mu m$ emission from the $^3F_4{\rightarrow}^3H_4$ transition on Tm$^{3+}$ ion has been found to transfer into $^4I_{13/2}$, $^4I_{9/2}$ and $^4S_{3/2}$ on $Er^{3+}$ ion. In case of the 1.06 $\mu m$ pumping, the emissin ratio of $^3H_4$ level in $Tm^{3+}$ to $^4I_{13/2}$ in $Er^{3+}$ showed that the amount of the energy transfer from $Tm^{3+}$ into $Er^{3+}$ increased with the increasing concentration of $Tm^{3+}$ ion. Our two kinds of pumping scheme suggest that the direction of dominant energy transfer between $Er^{3+}$ and $Tm^{3+}$ should be dependent on whether the $^3F_4$ level resonates in $Tm^{3+}$ the level or not.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.68.1-68
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• 2000

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.190-191
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.303-304
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• 2008

Al, N-codoped ZnO(ZnO:N,Al) thin films were deposited on n-type Si(100) substrate at $450^{\circ}C$ with various conditions of ambient gas$(N_2:O_2)$ by DC magnetron sputtering method using ZnO:$Al_2O_3$(2wt%) as a target, and then were annealed at 500, 700, $800^{\circ}C$ in $N_2$ gas for one hour. XRD patterns showed that all of the ZnO:N,Al thin films annealed at $80^{\circ}C$ grew with two peaks, which means poor crystallinity of the thin films deposited. Hall effects in Van der Pauw configuration proved that after annealing the films deposited showed low resistivity and high carrier concentration. While the films annealed at $800^{\circ}C$ showed low resistivity of $\sim10^{-2}\Omega$ cm and high carrier concentration of $\sim10^{19}cm^{-3}$.

• 한국세라믹학회지
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• 제46권4호
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• pp.350-356
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• 2009

Perovskite codoped with chromium and iron have been studied. Samples with $YAl_{0.96}(Cr_{0.04-x}Fe_x)O_3$(x=0.01, 0.02, 0.03, 0.04) were prepared by solid state reaction at $1450^{\circ}C$ for 6 h and were characterized by XRD, FT-IR, Raman spectroscopy, SEM and UV-vis spectrophotometer. The color of the synthesized pigments were from red to dark brown(in bulk). Up to 0.02 mole $Fe_2O_3$ for substituting $Cr_2O_3$ development of color in lime-glaze gives good red color but as increasing amount of $Fe_2O_3$ and decreasing $Cr_2O_3$ proportionally produce from brownish red to brown. Increasing $Fe_2O_3$ amount lead to weaken crystal field relatively due to have smaller ionic radius than $Cr_2O_3$ ionic one. The UV-vis peaks were shifted to lower wavelength.

• 한국표면공학회지
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• 제41권4호
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• pp.129-133
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• 2008

Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.

• 한국재료학회지
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• 제18권8호
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• pp.444-449
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• 2008

Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.