• 한국재료학회지
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• 제2권6호
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• pp.443-451
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• 1992

반응성 스팟터법에 의하여 형성된 TiN막 표면상에 CVD 텅스텐막을 증착할 때 여러가지 전처리 실시에 따른 텅스덴의 핵 생성 양상의 변화를 비교 조사하였다. 먼저 Ar rf 스팟터에칭 전처리는 에칭 두께가 200A 이상일 때에는 잠복기와 증착속도를 증가시킨다. Ar 이온주입 전처리는 잠복기를 증가시켜 텅스텐의 핵 생성에는 불리한 효과를 나타내는 반면, 증착속도는 증가시킨다. 또한 Si$H_4$flushing 전처리는 TiN막 표면에서의 Si의 흡착을 용이하게 함으로써 잠복기를 약간 감소시키는 효과를 나타낸다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.1-6
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• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• 한국재료학회지
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• 제11권10호
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• 한국재료학회지
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• 제8권7호
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• pp.579-583
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• 1998

P가 고농도로 도핑된 다결정 Si 기판 위에 Co/Ti 이중층막을 스퍼터 증착하고 급속열처리함으로써 얻어지는 실리사이드 층구조, 실리사이드막의 응집, 그리고 도펀트의 재분포 등을 단결정 Si 기판 위에서의 그것들과 비교하여 조사하였다. 다결정 Si 기판위에 형성한 Co/Si 이중층을 열처리할 때 단결정 기판에서의 경우보다 $CoSi_2$로의 상천이는 약간 더 낮은 온도에서 시작되며, 막의 응집은 더 심하게 일어난다. 또한, 다결정 Si 기판내의 도펀트보다 웨이퍼 표면을 통하여 바깥으로 outdiffusion 함으로써 소실되는 양이 훨씬 더 많다. 이러한 차이는 다결정 Si 내에서의 결정립계 확산과 고농도의 도펀트에 기인한다. Co/Ti/doped-polycrystalline si의 실리사이드화 열처리후의 층구조는 polycrystalline CoSi2/polycrystalline Si 으로서 Co/Ti(100)Si을 열처리한 경우의 층구조인 Co-Ti-Si/epi-CoSi2/(100)Si 과는 달리 Co-Ti-Si층이 사라진다.

• 한국진공학회지
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• 제9권4호
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• pp.389-393
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• 2000

Metalloid의 양이 거의 일정(B, Si 각각 l0 at.% 정도)하게 유지되는 상황에서 FeCoSiB 박막내의 Co함량 증가가 여러 가지 자기적 특성에 미치는 효과, 그리고 열처리 온도와 시간에 따른 막의 자성특성 변화를 관찰해 보았다. dc magnetron sputter를 이용하여 비정질 합금 자성박막을 증착하였으며, 비정질의 막을 형성하기 위하여 기판은 수냉하였다. 막의 조성은 순철 target위에 올려놓는 pellet의 수를 조절하여, 대략 $Fe_{80-X}Co_XBi_{10}Si_{10}$ (X=8~18 at.%)로 하였으며, 증착된 막의 조성은 ICP 분석법을 이용하여 조사하였다. Sputtering에 의해 증착된 박막의 결정화 유무는 XRD로 분석하였으며, 보자력과 포화 자화값 등의 자기적 성질은 VSM을 이용하여 측정하였다. 실험결과에 따르면 막내 Co 함량이 증가함에 따라 보자력은 감소하는 경향을 나타내었으며, 포화자화 값은 Co 함량이 대략 10 at.%에 도달할 때까지는 증가하다가 그 이상에서는 감소하는 현상을 나타내었다. 그리고 증착 과정중에 막에 생기는 잔류응력의 제거효과를 관찰하기 위해 열처리 온도(100, 200, $300^{\circ}C$)와 시간(0~60분)을 변화시키며 실험한 결과, 예상되었던 바대로 잔류응력의 감소로 인해 Co 첨가시와 마찬가지로 보자력이 감소하는 결과를 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.613-616
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• 2008

We report on electrical and optical properties of flexible ITO electrode grown on PET substrate using a specially designed roll-to-roll facing target sputtering (R2R FTS) system at room temperature without conventional cooling drum. Due to effective confinement of high density plasma between ITO targets, we can grow a flexible ITO electrode without cooling drum at room temperature.

• Journal of Magnetics
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• 제14권1호
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.