• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.5
• /
• pp.444-450
• /
• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.578-581
• /
• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Korean Journal of Materials Research
• /
• v.9 no.4
• /
• pp.341-344
• /
• 1999

We reported compositional separation(CS) into Co-enriched and Cri-enriched components inside the grains of Co-Cr based thin films prepared by rf sputtering. CS strongly depends on the sputtering conditions of substrate temperature and target composition. Tuning the microstructure of the Co-Cr films is important in order to employ the CS for high-density magnetic recording. We investigated the origin of CS from thermodynamic viewpoint. We employ a spinodal decomposition-like model to describe the origin of the CS in Co-Cr films. We consider the total free energy of the Co-Cr films as the sum of several free energies of; 1) thermodynamic mixing entropy of a binary solid solution, 2) magnetic ordering interaction(MOI) energy below the Curie temperature, and 3) excess interaction energy(XS) caused by the sputtering process as a function of temperature and composition. Those energies distorted the total free energy like the spinodal decomposition and caused the compositionally separated fine microstructure inside the grains. If the second derivative of the total free energy with respect to Cr composition becomes negative at a given substrate temperature, we may observe a metastable compositional separation inside the Co-Cr alloy films. We expect to exploit the microstructure of CS for ultra-high density magnetic recording.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.91-91
• /
• 1994

• Proceedings of the Korean Magnestics Society Conference
• /
• 1996.10a
• /
• pp.34-35
• /
• 1996

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1993.11a
• /
• pp.43-43
• /
• 1993

• Proceedings of the Korean Magnestics Society Conference
• /
• 1998.10a
• /
• pp.34-35
• /
• 1998

• Journal of the Korean Magnetics Society
• /
• v.9 no.5
• /
• pp.256-262
• /
• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of Magnetics
• /
• v.9 no.3
• /
• pp.75-78
• /
• 2004

Magnetic transmission soft X-ray microscopy has been used to study element-specifically the magnetization reversal behavior of ${(Co_{84}Cr_{16})}_{87}Pt_{l3}$ alloy thin films with a lateral resolution of 35 nm. Our results indicate that the magnetization switching is carried out by a random nucleation process that can be attributed to the reversal of individual grains. We found evidence of a large distribution of the switching fields at the nanogranular length scale, which has to be considered seriously for applications of CoCrPt systems as magnetic high density storage materials.

• Journal of the Korean Magnetics Society
• /
• v.3 no.1
• /
• pp.41-47
• /
• 1993

Effects of Ta addition on Co-Cr pependicular magnetic recording media were studied to obtain high perpen-dicular coercivity at lower substrate temperature. For the purpose. magnetic properties and microstructures of Co-Cr-(Ta) films were studied by varying the Cr contents from 17 to 21 at.% and Ta contents for 0 to 3.2 at.%. Effectiveness of Ta addition in increasing perpendicular coercivity was significant for lower Cr content films. The increasement of perpendicular coercivity was more pronounced for the films deposited on $100^{\circ}C$ heated substrate in the case of ${(Co_{83}Cr_{17})}_{98.4}Ta_{1.6}$ composition. The cause of the increase of perpendicular coercivity was considered due to not the grain refinement effects and the improvement of c-axis alignments but increase of Ta and Cr segregation.