• 전기화학회지
• /
• 제6권3호
• /
• pp.208-211
• /
• 2003

본 연구에서는 CoP나노선재의 미세구조 및 크기에 따른 자기적 성질의 변화를 고찰하였다. 우선 나노선재를 제조하기 위하여 기공의 직경이 각각 20nm, 200nm인 알루미나 형틀을 제조하였고, 이 형틀을 이용하여 전기도금 방법으로 CoP나노선재를 제조하였다. 직경이 20nm인 나노선재의 경우 나노선재의 길이방향으로의 각형성 및 보자력이 각각 0.8, 2600 Oe으로서 지금까지 보고된 나노선재들에 비해 우수한 자기적 성질을 나타내었고 전기도금 시 전류밀도의 영향이 거의 없었다. 그러나 직경이 200nm인 나노선재는 나노선재의 길이방향으로 각형성 및 보자력이 각각 0.15, 1200 Oe으로 20nm나노선재보다 현격하게 감소하였으며 나노선재의 자기적 성질이 전류밀도에 따라 많은 영향을 받고 있음을 확인하였다 즉, 상대적으로 낮은 전류밀도에서 제조된 나노선재일 수록 나노선재와 평행한 방향으로 자화용이축이 배향되어 길이방향으로 각형성 및 보자력이 증가하였다.

• Bulletin of the Korean Chemical Society
• /
• 제23권11호
• /
• pp.1519-1523
• /
• 2002

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2008년도 Asian Magnetics Conference
• /
• pp.241.1-241.1
• /
• 2008

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
• /
• pp.170-171
• /
• 2005

• Bulletin of the Korean Chemical Society
• /
• 제24권12호
• /
• pp.1827-1831
• /
• 2003

Field emission of carbon nanotubes (CNTs) fabricated by disproportionation of CO has been studied. CNTs fabricated on well-ordered Co nanowire arrays formed on the porous anodic aluminum oxide templates were well graphitized, uniform in diameter and aligned vertically with respect to the plane of the template, and showed a good field emission property. Very uniform emissions were observed from the CNTs fabricated at relatively low temperature, $500-600^{\circ}C$. Low fabrication temperature such as $500^{\circ}C$ could make it possible to fabricate CNTs on soda lime glass, a low-cost substrate, for display panel.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.215-216
• /
• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].