• Journal of the Korean Electrochemical Society
• /
• v.6 no.3
• /
• pp.208-211
• /
• 2003

We have investigated the dimensional and microstructural dependence of magnetic properties of CoP nano-wire arrays fabricated by electrodeposition on AAO(anodic aluminum oxide) templates with different-size nanopores. Our results indicate that the magnetic properties of nanowire arrays can be varied with their dimensions and microstructures. As for the CoP nanowire arrays with the diameter of 20nm, it was found to have the coercivity more than 2.6kOe due to the shape anisotropy and squareness(Mr/Ms) of $\~0.8$. The CoP nanowire arrays with the diameter of 200m, however, showed very different magnetic properties depending on the current densities. Nanowires fabricated at $5mA/cm^2$ had stronger tendency to have the preferred crystallographic orientation of (002) parallel to the nanowire than those fabricated at $35mA/cm^2$ These microstructural differences are the reason why CoP nanowire arrays prepared at different current densities exhibited different magnetic properties.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.11
• /
• pp.1519-1523
• /
• 2002

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.241.1-241.1
• /
• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2005.12a
• /
• pp.170-171
• /
• 2005

• Bulletin of the Korean Chemical Society
• /
• v.24 no.12
• /
• pp.1827-1831
• /
• 2003

Field emission of carbon nanotubes (CNTs) fabricated by disproportionation of CO has been studied. CNTs fabricated on well-ordered Co nanowire arrays formed on the porous anodic aluminum oxide templates were well graphitized, uniform in diameter and aligned vertically with respect to the plane of the template, and showed a good field emission property. Very uniform emissions were observed from the CNTs fabricated at relatively low temperature, $500-600^{\circ}C$. Low fabrication temperature such as $500^{\circ}C$ could make it possible to fabricate CNTs on soda lime glass, a low-cost substrate, for display panel.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.215-216
• /
• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].