• Title/Summary/Keyword: Co doping

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A Study on the Dehydrogenation of Methanol by Alkali-doped Silica-alumina Catalyst (알칼리 금속이 첨가된 silica-alumina 촉매에 의한 메탄올의 탈수소반응의 연구)

  • Kwak, Jong Woon;Park, Jin-Nam;Lee, Ho-In
    • Applied Chemistry for Engineering
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    • v.7 no.4
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    • pp.698-706
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    • 1996
  • Dehydrogenation of methanol to produce formaldehyde was carried out over various silica-alumina catalysts doped with alkali metals in a continuous flow system. The reaction was rather dependent on Lewis acid than Br${\ddot{o}}$nsted acid suggesting that dehydrogenation of methanol was an electronic reaction. The Br${\ddot{o}}$nsted acid sites on silica-alumina were neutralized by doping with alkali metals, and the neutralization effect of Br${\ddot{o}}$nsted acid was dependent on the electron-donating capacity of the dopant metals. Activation energy for dehydrogenation of methanol decreased when Br${\ddot{o}}$nsted acid was neutralized by doping with K.

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Effect of B-Cation Doping on Oxygen Vacancy Formation and Migration in LaBO3: A Density Functional Theory Study

  • Kwon, Hyunguk;Park, Jinwoo;Kim, Byung-Kook;Han, Jeong Woo
    • Journal of the Korean Ceramic Society
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    • v.52 no.5
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    • pp.331-337
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    • 2015
  • $LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

Effect of activator types on cement mortar with polymeric aluminum chloride waste residue

  • Ping Xu;Yuhao Cui;Dong Han;Minxia Zhang;Yahong Ding
    • Advances in concrete construction
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    • v.15 no.3
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    • pp.149-159
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    • 2023
  • Water glass (WG) and sodium sulfate (SS) were used to prepare polymeric aluminum chloride residue cement mortar (PACRM) by single and compound blending with polymeric aluminum chloride waste residue, respectively. The structural strength and textural characteristics examinations showed that PACRM consistency increased by incorporating WG, but decreased by incorporating SS. When WG and SS were compounded, the mortar consistency initially rose before falling. The compressive strength of PACRM increased and then decreased as WG was increased. The mechanical properties of PACRM were better enhanced by SS than WG, showing no strength deterioration. The main reason for the improved mechanical properties of polymeric aluminum chloride waste residue in the presence of activators is the increased precipitation of reactive substances, such as C-S-H gels, calcium silica, and Ca(OH)2. The density of the specimens with PACRM and the degree of aggregation of hydration products were significantly enhanced by generating more hydration products in the mortar. Further, the cracks and pores were significantly reduced, and the matrix structure was continuous and dense at 5% SS doping and 3% compound doping.

Electrical Characteristic of Power MOSFET with Zener Diode for Battery Protection IC

  • Kim, Ju-Yeon;Park, Seung-Uk;Kim, Nam-Soo;Park, Jung-Woong;Lee, Kie-Yong;Lee, Hyung-Gyoo
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.47-51
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    • 2013
  • A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

VT-Modulation of Planar Tunnel Field-Effect Transistors with Ground-Plane under Ultrathin Body and Bottom Oxide

  • Sun, Min-Chul;Kim, Hyun Woo;Kim, Hyungjin;Kim, Sang Wan;Kim, Garam;Lee, Jong-Ho;Shin, Hyungcheol;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.139-145
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    • 2014
  • Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

Luminescence Characteristics and Crystal Structure of CaWO4-Li2WO4-Eu2O3 Phosphors (CaWO4-Li2WO4-Eu2O3계 형광체의 PL 특성과 결정구조)

  • Kim, Jeong-Seog;Choi, Jin-Ho;Jeong, Bong-Man;Kang, Hyun-Ju
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.10-15
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    • 2006
  • Photoluminescence (PL) and crystal structures of the $(l-x)CaWO_4-xLi_2WO_4$ binary system added with $Eu_2O_3$ activator have been characterized. The $CaWO_4\;and\;Li_2WO_4$ have the scheelite and phenakite structures respectively. The $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors show the red luminescence of 613 nm peak wavelength. The wavelength range of excitation spectral band is $380\~470$ nm with the peak wavelength of 397 nm. The $0.88(0.5CaWO_4-0.5Li_2WO_4)-0.12Eu_2O_3$ showed the most superior luminescence characteristics. The effect of co-doping elements such as $Al_2O_3$ and rare-earth oxides on PL has been characterized. The co-doping elements deteriorated the luminescence intensity except the $Al_2O_3$ and $Gd_2O_3$. The PL characteristics of $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors have been compared to those of the alkali europium double molybdates (tungstates) of scheelite-related structure such as $LiEu(MoO_4)_2$ and $CsEu(MoO_4)_2$. The crystal structures of $(l-y)[(l-x)CaWO_4-xLi_2WO_4]-yEu_2O_3$ phosphors have been characterized using XRD data and rietveld refinement.

The Influence of the Mg-doped p-GaN Layer Activated in the O2 Ambient on the Current-Voltage Characteristics of the GaN-Based Green LEDs (O2 분위기에서 p-GaN 층의 Mg 활성화가 GaN계 녹색 발광소자에 미치는 전류-전압특성)

  • 윤창주;배성준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.441-448
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    • 2002
  • The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

Emission Characteristics of White Organic Light-Emitting Diodes Using Ultra Wide Band-gap Phosphorescent Material (Ultra Wide Band-gap 인광체를 이용한 백색 OLED의 발광 특성)

  • Chun, Hyun-Dong;Na, Hyunseok;Choo, Dong Chul;Kang, Eu-Seok;Yang, Jae-Woong;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.910-915
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    • 2012
  • We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

Crystal Structures, Electrical Conductivities and Electrochemical Properties of LiCo1-XMgxO2(x=0.03) for Secondary Lithium Ion Batteries (리튬 2차 전지용 LiCo1-XMgxO2(x=0.03)의 결정구조, 전기전도도 및 전기화학적 특성)

  • Kim, Ho-Jin;Chung, Uoo-Chang;Jeong, Yeon-Uk;Lee, Joon-Hyung;Kim, Jeong-Joo
    • Journal of the Korean Ceramic Society
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    • v.42 no.9 s.280
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    • pp.602-606
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    • 2005
  • [ $LiCoO_{2}$ ] is the most common cathode electrode materials in Lithium-ion batteries. $LiCo_{0.97}Mg_{0.03}O_2$ was synthesized by the solid-state reaction method. We investigated crystal structures, electrical conductivities and electrochemical properties. The crystal structure of $LiCo_{0.97}Mg_{0.03}O_2$ was analyzed by X-ray powder diffraction and Rietveld refinement. The material showed a single phase of a layered structure with the space group R-3m. The lattice parameter(a, c) of $LiCo_{0.97}Mg_{0.03}O_2$ was larger than that of $LiCoO_2$. The electrical conductivity of sintered samples was measured by the Van der Pauw method. The electrical conductivities of $LiCoO_2$ and $LiCo_{0.97}Mg_{0.03}O_2$ were $2.11{\times}10^{-4}\;S/cm$ and $2.41{\times}10^{-1}\;S/cm$ at room temperature, respectively. On the basis of the Hall effect analysis, the increase in electrical conductivities of $LiCo_{0.97}Mg_{0.03}O_2$ is believed due to the increased carrier concentrations, while the carrier mobility was almost invariant. The electrochemical performance was investigated by coin cell test. $LiCo_{0.97}Mg_{0.03}O_2$ showed improved cycling performance as compared with $LiCoO_2$.

Codoped ZnO films by a co-spray deposition technique for photovoltaic applications

  • Zhou, Bin;Han, Xiaofei;Tao, Meng
    • Advances in Energy Research
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    • v.2 no.2
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    • pp.97-104
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    • 2014
  • A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.