• 제목/요약/키워드: Co doping

검색결과 411건 처리시간 0.024초

EFFECTS OF Co-DOPING LEVEL ON THE MICROSTRUCTURAL AND FERROMAGNETIC PROPERTIES OF LIQUID-DELIVERY METALORGANIC-CHEMICAL-VAPOR-DEPOSITED $Ti_{1-x}Co_xO_2$ THIN FILMS

  • Seong, N.J.;Seong, S.G.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.42-43
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    • 2002
  • Spintronics is a rapidly expanding research area because of recent developments in the physics of spin-dependent phenomena. For use as spintronic materials, dilute magnetic semiconductors (DMS) are of considerable interest as spin injectors for spintronic devices.$^{[1]}$ Many researchers have studied DMS, in which transition metal atoms are introduced into the lattice, thus inserting local magnetic moments into the lattice. (omitted)

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In, Cr 동시 도핑에 따른 BiSbTe3 소재의 열전성능지수 증대 (Thermoelectric Properties of In and Cr Co-Doped BiSbTe3)

  • 이창우;김준수;허민수;김상일;김현식
    • 한국재료학회지
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    • 제34권9호
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    • pp.448-455
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    • 2024
  • We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume-Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (ΓCvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in density-of-states effective mass (md*) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ0) led to an 88 % increase in weighted mobility (μw). Furthermore, analyzing zT with respect to nH revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.

Fabrication and Characteristics of Li-doped ZnO Thin Films for SAW Filter Applications

  • Ha, Jae-Soo;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • 제3권2호
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    • pp.110-115
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    • 1997
  • Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

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Investigation of Li Dopant as a Sintering Aid for ScSZ Electrolyte for IT-SOFC

  • Mori, Masashi;Liu, Yu;Ma, Shuhua;Hashimoto, Shin-ichi;Takei, Katsuhito
    • 한국세라믹학회지
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    • 제45권12호
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    • pp.760-765
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    • 2008
  • In this study, the effects of small amounts (${\leq}3\;mol%$) of Li doping on the sintering characteristics and electrochemical performance of $(ZrO_2)_{0.89}(ScO_{1.5})_{0.1}(CeO_2)_{0.01}$ (ScSZ) were investigated. By adding 3 mol% lithium, the densification temperature of ScSZ was reduced from the conventional temperature of $1400^{\circ}C$ to $1200^{\circ}C$. It was found that Li doping also led to changes in the Zr:Sc ratio at the grain boundaries. Correspondingly, the dispersion of lithium zirconia at the grain boundaries accelerated the growth of ScSZ grains and increased the grain boundary resistance at temperatures below $450^{\circ}C$. At elevated temperatures of $450{\sim}750^{\circ}C$, the electrical conductivity of the ScSZ after doping remained almost unchanged under air and reducing atmospheres. These results suggest that the addition of lithium is promising for use in low temperature co-firing of ScSZ-based components for intermediate temperature solid oxide fuel cells.

Characterization of Silver Saturated-Ge45Te55 Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

  • Lee, Soo-Jin;Yoon, Soon-Gil;Yoon, Sung-Min;Yu, Byoung-Gon
    • Transactions on Electrical and Electronic Materials
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    • 제8권2호
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    • pp.73-78
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    • 2007
  • The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

전기방사방법에 의해 합성된 ZnO 중공 나노섬유의 trimethylamine 가스 감응 특성 (Trimethylamine Sensing Characteristics of Molybdenum doped ZnO Hollow Nanofibers Prepared by Electrospinning)

  • 김보영;윤지욱;이철순;박준식;이종흔
    • 센서학회지
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    • 제24권6호
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    • pp.419-422
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    • 2015
  • Pure and Mo-doped ZnO hollow nanofibers were prepared by single capillary electrospinning and their gas sensing characteristics toward 5 ppm ethanol, trimethylamine (TMA), CO and $H_2$ were investigated. The gas responses and responding kinetics were dependent upon sensing temperature and Mo doping. Mo-doped ZnO hollow nanofibers showed high response to 5 ppm TMA ($R_a/R_g=111.7$, $R_a$: resistance in air, $R_g$: resistance in gas) at $400^{\circ}C$, while the responses of pure ZnO hollow nanofibers was low ($R_a/R_g=47.1$). In addition, the doping of Mo enhanced selectivity toward TMA. The enhancement of gas response and selectivity to TMA by Mo doping to ZnO nanofibers was discussed in relation to the interaction between basic analyte gas and acidic additive materials.