• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.9-10
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• 2006

• Korean Journal of Computational Design and Engineering
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• v.20 no.3
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• pp.291-297
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• 2015

A water jet cleaning robot system for micro drill bits is to refurbish micro drill bits used for the PCB manufacturing process. It can refurbish drill bits with the minimum diameter of ${\phi}0.15{\sim}0.075mm$ of which the total quantity have been discarded before. Micro drill bits with the minimum diameter of ${\phi}0.075mm$ can be cleaned by applying the water jet cleaning robot system out of the manual ultrasonic cleaning in the past for the cleaning equipment as the initial process in refurbishing. This study analyzed problems, while applying the apparatus mechanism for the workability such as the robot traces of Transfer Robot I and II, drill bit loading and unloading, and cleaning tasks in the water jet cleaning robot system in an effort to carry out simulations. In addition, the cleaning work process was optimized as the work process was verified in advance and the production quantity was analyzed through simulations.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.29-33
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• 2008

Rapid increase of integrity for recent semiconductor industry highly demands the development of removal technology of contaminated particles in the scale of a few microns or even smaller. It is known that the surface cleaning technology using $CO_2$ snow has its own merits of high efficiency. However, the detailed removal mechanism of particles using this technology is not yet fully understood due to the lack of sophisticated research endeavors. The detachment mechanism of particles from the substrates is known to be belonged in four types; rebounding, sliding, rolling and lifting. In this study, a modeling effort is performed to explain the detachment mechanism of a contaminant particle due to the rebounding caused by the vertical collision of the $CO_2$ snow. The Hertz and Johnson-Kendall-Roberts(JKR) theories are employed to describe the contact, adhesion and deformation mechanisms of the particles on a substrate. Numerical simulations are followed for several representative cases, which provide the perspective views on the dynamic characteristics of the particles as functions of the material properties and the initial inter-particle collision velocity.

• Journal of Power System Engineering
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• v.21 no.3
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• pp.74-84
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• 2017

This paper presents the development of the underwater cleaning robot platform for a higher efficiency in manufacturing industry. Human operators directly go into the cistern and clean sludge after drainage of the water so far. It is sometimes dangerous because of the harmful chemical materials from the product making process. In addition, it takes long time for water drainage and supplying it back. However, the robot cleaning operation does not need to drain water so that it could be applied to the sludge cleaning work at any time without the plant pause. Moreover, it can prevent the safety accidents because human operators are not necessary to enter directly the sludge cisterns. This paper shows the performance of cleaning work that can be applied in the industrial field through the design and development of underwater cleaning robot platform. And these results demonstrate that the developed underwater cleaning robot has great possibilities to clean other industrial water cisterns.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.5
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• pp.662-671
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• 2009

In this paper, a robot was developed for in-pipe cleaning and inspecting a large number of circular in-pipes of sea plants, ships, and buildings. A pressure generation mechanism was devised to inspect circular in-pipes with different diameters and to move up and down slant or perpendicular slopes in-pipes. For inspection of the dark inner side of the pipe, a light system using LED which dissipats small electricity was developed. Also, a design method was analyzed to decide the capacity of driving motor for the robot when the mass and maximum velocity of the robot are identified. The robot developed based on the design specification, was tested to verify the performance of the pressure generation mechanism. In addition, a control system was developed for the test.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.56-56
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• 1997

• Journal of the Korea Society of Computer and Information
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• v.13 no.3
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• pp.85-90
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• 2008

In this paper, we propose a new robot cleaning algorithm, which we call SetClean. The new algorithm cleans from the most less complex area. Sometimes, when the cleaning completion time can be longer or can not be estimated, cleaning larger area first is better than optimizing the whole time for cleaning. To do this, SetClean algorithm divides the whole area into cleanable sub-areas using Set Cover algorithm and cleans the area in the order of high efficiency that maximize the cleanable area per unit time. SetClean algorithm decides the navigation flow by considering not only the size of the area but also the distance from the current robot location to the area to be cleaned and the delay time caused by the number of turns within the area. The experimental results show the mechanism and performance of the SetClean algorithm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.899-901
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• 2014

This paper presents design of a cleaning robot with an omni-directional mobility. The cleaning robot driven with three wheels has been developed and Those omni-wheels enable the robot to move in any directions so that lateral movement is possible. Three wheels mechanism using ball-type tire has been developed to realize a holonomic omni-diredctional robot.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.